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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2019-06-21 16:05 |
Aichi |
Nagoya Univ. VBL3F |
First principle simulation about phase change of superlattice GeTe/Sb2Te3 Yutaro Ogawa, Hiroaki Nohara, Hiroki Shirakawa, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.) SDM2019-33 |
GeTe/ Sb2Te3 superlattice is used in memory elements of interfacial phase change memory (iPCM). iPCM is one of the most ... [more] |
SDM2019-33 pp.39-42 |
SDM |
2018-06-25 15:55 |
Aichi |
Nagoya Univ. VBL3F |
First principle investigation of superlattice GeTe/Sb2Te3 phase change Hiroaki Nohara, Hiroki Shirakawa, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.) SDM2018-24 |
[more] |
SDM2018-24 pp.37-41 |
SDM |
2017-11-09 10:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Multri-Physics Simulation of GaN MOVPE Growth Kenji Shiraishi, Kazuki Sekiguchi, Kenta Chokawa, Hiroki Shirakawa, Kento Kawakami, Yoshihiro Yamamoto, Masaaki Araidai, Naoya Okamoto, Katsumori Yoshimatsu (Nagoya Univ.), Yoshihiro Kangawa, Koichi Kakimoto (Kyushu Univ.) SDM2017-61 |
In conventional GaN growth simulations, it has been believed that tri-methyl-gallium (TMG) first react with ammonia form... [more] |
SDM2017-61 pp.1-4 |
SDM |
2015-06-19 13:00 |
Aichi |
VBL, Nagoya Univ. |
First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.) SDM2015-45 |
Why is high-quality Si/SiO2 interface readily fabricated by simple thermal oxidation? Even though the question is closel... [more] |
SDM2015-45 pp.37-40 |
SDM |
2014-06-19 13:45 |
Aichi |
VBL, Nagoya Univ. |
Atomistic study of Nitrogen and Hydrogen incorporation effect in Si-rich SiO2 Hiroki Shirakawa, Keita Yamaguchi (Univ. of Tsukuba), Katsumasa Kamiya (KAIT), Kenji Shiraishi (Nagoya Univ.) SDM2014-52 |
Charge trapping memories such as the MONOS (Metal-Oxide-Nitride-Oxide-Semiconductor) type memories naturally have the ch... [more] |
SDM2014-52 pp.49-53 |
SDM |
2013-06-18 11:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Guiding principles of Long Lifespan Archive Memory using MONOS type Memory Hiroki Shirakawa, Keita Yamaguchi, Katsumasa Kamiya, Kenji Shiraishi (Univ. of Tsukuba) SDM2013-52 |
There is an increased demand for digital technology in archival storage infrastructure. Therefore, a long lifespan archi... [more] |
SDM2013-52 pp.43-46 |
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