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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2019-06-21
16:05
Aichi Nagoya Univ. VBL3F First principle simulation about phase change of superlattice GeTe/Sb2Te3
Yutaro Ogawa, Hiroaki Nohara, Hiroki Shirakawa, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.) SDM2019-33
GeTe/ Sb2Te3 superlattice is used in memory elements of interfacial phase change memory (iPCM). iPCM is one of the most ... [more] SDM2019-33
pp.39-42
SDM 2018-06-25
15:55
Aichi Nagoya Univ. VBL3F First principle investigation of superlattice GeTe/Sb2Te3 phase change
Hiroaki Nohara, Hiroki Shirakawa, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.) SDM2018-24
 [more] SDM2018-24
pp.37-41
SDM 2017-11-09
10:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Multri-Physics Simulation of GaN MOVPE Growth
Kenji Shiraishi, Kazuki Sekiguchi, Kenta Chokawa, Hiroki Shirakawa, Kento Kawakami, Yoshihiro Yamamoto, Masaaki Araidai, Naoya Okamoto, Katsumori Yoshimatsu (Nagoya Univ.), Yoshihiro Kangawa, Koichi Kakimoto (Kyushu Univ.) SDM2017-61
In conventional GaN growth simulations, it has been believed that tri-methyl-gallium (TMG) first react with ammonia form... [more] SDM2017-61
pp.1-4
SDM 2015-06-19
13:00
Aichi VBL, Nagoya Univ. First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation
Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.) SDM2015-45
Why is high-quality Si/SiO2 interface readily fabricated by simple thermal oxidation? Even though the question is closel... [more] SDM2015-45
pp.37-40
SDM 2014-06-19
13:45
Aichi VBL, Nagoya Univ. Atomistic study of Nitrogen and Hydrogen incorporation effect in Si-rich SiO2
Hiroki Shirakawa, Keita Yamaguchi (Univ. of Tsukuba), Katsumasa Kamiya (KAIT), Kenji Shiraishi (Nagoya Univ.) SDM2014-52
Charge trapping memories such as the MONOS (Metal-Oxide-Nitride-Oxide-Semiconductor) type memories naturally have the ch... [more] SDM2014-52
pp.49-53
SDM 2013-06-18
11:55
Tokyo Kikai-Shinko-Kaikan Bldg. Guiding principles of Long Lifespan Archive Memory using MONOS type Memory
Hiroki Shirakawa, Keita Yamaguchi, Katsumasa Kamiya, Kenji Shiraishi (Univ. of Tsukuba) SDM2013-52
There is an increased demand for digital technology in archival storage infrastructure. Therefore, a long lifespan archi... [more] SDM2013-52
pp.43-46
 Results 1 - 6 of 6  /   
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