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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2024-06-21 14:00 |
Osaka | Kwansei Gakuin Univ., Umeda Campus | [Invited Lecture]
Demonstration of AlN-Based Vertical p-n Diodes with Distributed Polarization Doping Takeru Kumabe (Nagoya Univ.), Akira Yoshikawa (Asahi Kasei), Seiya Kawasaki, Maki Kushimoto, Yoshio Honda, Manabu Arai, Jun Suda, Hiroshi Amano (Nagoya Univ.) |
[more] | |
| LQE, ED, CPM | 2023-11-30 15:20 |
Shizuoka | Formation of p-type GaN by Mg thermal diffusion and challenges for device applications Yuta Itoh, Hirotaka Watanabe, Manato Deki, Shugo Nitta, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano (Nagoya Univ.)  ED2023-19 CPM2023-61 LQE2023-59 |
Establishment of a localized p-type doping technique is essential to realize vertical GaN power devices. However, in Mg ... [more] | ED2023-19 CPM2023-61 LQE2023-59 pp.25-30 |
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| LQE, ED, CPM | 2023-11-30 15:45 |
Shizuoka | Growth of low carbon density GaN on (0001) plane by MOVPE Hirotaka Watanabe, Shugo Nitta, Naoki Fujimoto, Seiya Kawasaki, Takeru Kumabe, Kazuki Ohnishi, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2023-20 CPM2023-62 LQE2023-60 |
[more] | ED2023-20 CPM2023-62 LQE2023-60 pp.31-35 |
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| SDM | 2019-06-21 16:25 |
Aichi | Nagoya Univ. VBL3F | Evaluation of Interface Characteristics in GaN-MOS Capacitors with Boron-doped Al2O3 Gate Insulators Manato Deki, Shin Okude, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) SDM2019-34 |
[more] | SDM2019-34 pp.43-46 |
| SDM | 2018-06-25 11:00 |
Aichi | Nagoya Univ. VBL3F | Evaluation of Interface State Density in GaN-MOS Capacitors on Miscut m-plane GaN Substrates Manato Deki, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) SDM2018-16 |
[more] | SDM2018-16 pp.1-4 |
| LQE, CPM, ED | 2017-11-30 15:25 |
Aichi | Nagoya Inst. tech. | Study on oxygen reduction in MOVPE growth of GaN on -c-plane GaN substrate Tsukasa Kono, Maki Kushimoto, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2017-53 CPM2017-96 LQE2017-66 |
GaN epitaxial layer grown on -c plane substrate by MOVPE has a smaller amount of carbon incorporation that compensates e... [more] | ED2017-53 CPM2017-96 LQE2017-66 pp.19-22 |
| ED, LQE, CPM | 2015-11-26 11:20 |
Osaka | Osaka City University Media Center | AlN growth on AlN/Sapphire substrate by RF-HVPE Daiki Yasui, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Motoaki Iwaya, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2015-70 CPM2015-105 LQE2015-102 |
AlN (Aluminum nitride) is promising for deep ultraviolet optoelectronic devices. High crystal quality free-standing AlN ... [more] | ED2015-70 CPM2015-105 LQE2015-102 pp.11-14 |
| ED, CPM, SDM | 2015-05-28 14:50 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Semi-polar GaN (10-13) grown on nominal Si (001) substrate with sputtered AlN buffer layer Hojun Lee, Tadashi Mitsunari, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) |
[more] | |
| CPM | 2014-09-05 09:55 |
Yamagata | The 100th Anniversary Hall, Yamagata University | Quantum Efficiency and Life Time of GaN and InGaN with NEA-surface Daiki Sato, Tomohiro Nishitani, Takuya Maekawa, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) CPM2014-84 |
The photocathode using Negative Electron Affinity (NEA) surface on a semiconductor has been applied for science technolo... [more] | CPM2014-84 pp.49-54 |
| CPM, ED, SDM | 2014-05-29 09:40 |
Aichi | The effects of polarization charges to carrier transport in nitride-based LEDs Syouta Katsuno, Kento Hayashi, Toshiki Yasuda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2014-33 CPM2014-16 SDM2014-31 |
It has been reported that one of the reasons of carrier overflow is polarization charges induced at hetero interfaces. I... [more] | ED2014-33 CPM2014-16 SDM2014-31 pp.75-80 |
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| CPM, ED, SDM | 2014-05-29 14:00 |
Aichi | P - GaN by Mg Ion Implantation for Power Device Applications Zheng Sun, Marc Olsson (Nagoya Univ.), Tsutomu Nagayama (Nissin Ion Equipment), Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2014-40 CPM2014-23 SDM2014-38 |
We realized p-GaN by high temperature Mg ion implantation with pre-sputter(PS) technique. Due to the new PS technique an... [more] | ED2014-40 CPM2014-23 SDM2014-38 pp.109-112 |
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| CPM, LQE, ED | 2013-11-28 11:25 |
Osaka | Study on improvement of the light extraction efficiency in 350-nm-emission UV-LED Tsubasa Nakashima, Kenichiro Takeda, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2013-66 CPM2013-125 LQE2013-101 |
We have aimed to improve the light extraction efficiency by using p- and n- high-reflectivity indium tin oxide /Al elect... [more] | ED2013-66 CPM2013-125 LQE2013-101 pp.11-16 |
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| CPM, LQE, ED | 2013-11-28 15:50 |
Osaka | Quantum Efficiency of p-GaN with NEA surface for high brightness electron source Takuya Maekawa, Yoshio Honda, Hiroshi Amano, Tomohiro Nishitani (Nagoya Univ.) ED2013-73 CPM2013-132 LQE2013-108 |
We report the lifetime and high brightness condition of the NEA GaN surface for the high brightness and durability of th... [more] | ED2013-73 CPM2013-132 LQE2013-108 pp.43-46 |
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| CPM, LQE, ED | 2013-11-28 16:15 |
Osaka | Study on C doping in GaN and AlGaN by MOVPE Yuya Wakasugi, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2013-74 CPM2013-133 LQE2013-109 |
We grew Mg/C co-doped GaN and AlGaN by MOVPE for identifying the C level in GaN and AlGaN. We measured electrical and op... [more] | ED2013-74 CPM2013-133 LQE2013-109 pp.47-50 |
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| CPM, LQE, ED | 2013-11-28 17:05 |
Osaka | Fabrication of the multi-junction GaInN based solar cells using tunnel junction Hironori Kurokawa, Tomomi Goda, Mitsuru Kaga, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2013-76 CPM2013-135 LQE2013-111 |
[more] | ED2013-76 CPM2013-135 LQE2013-111 pp.57-61 |
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| CPM, LQE, ED | 2013-11-29 10:20 |
Osaka | Growth of thick InGaN epilayer by high-pressure MOVPE Kouhei Yamashita, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) |
[more] | ||
| CPM, LQE, ED | 2013-11-29 14:20 |
Osaka | Development of AlGaN DUV-LEDs Masamichi Ippommatsu, Akira Hirano (UVCR), Hiroshi Amano (Nagoya Univ.), Isamu Akasaki (Meijyo Univ.) ED2013-84 CPM2013-143 LQE2013-119 |
We report on development for commercial production of 50mW class AlGaN based deep ultraviolet light -emitting diodes (DU... [more] | ED2013-84 CPM2013-143 LQE2013-119 pp.91-94 |
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| ED, SDM, CPM | 2012-05-17 14:30 |
Aichi | VBL, Toyohashi Univ. of Technol. | Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) ED2012-20 CPM2012-4 SDM2012-22 |
We grew High-quality semipolar (1-101) GaN stripes on a Si substrate through Selective area growth (SAG) and regrow InGa... [more] | ED2012-20 CPM2012-4 SDM2012-22 pp.15-18 |
| LQE, ED, CPM | 2011-11-17 17:35 |
Kyoto | Katsura Hall，Kyoto Univ. | Concentrating properties of nitride-based solar cells Mikiko Mori, Shota Yamamoto, Yosuke Kuwahara, Takahiro Fujii, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-87 CPM2011-136 LQE2011-110 |
In this study, we investigated the concentrating properties of nitride based solar cells up to 200 suns. The conversion ... [more] | ED2011-87 CPM2011-136 LQE2011-110 pp.71-75 |
| LQE, ED, CPM | 2011-11-18 09:55 |
Kyoto | Katsura Hall，Kyoto Univ. | Microstructural observation of AlGaN on ELO-AlN Kimiyasu Ide, Junichi Yamamoto, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-89 CPM2011-138 LQE2011-112 |
AlGaN-based ultraviolet light emitting device has been achieved as the high spec LED from UV-A to UV-C. It is widely exp... [more] | ED2011-89 CPM2011-138 LQE2011-112 pp.81-85 |
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