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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 10 of 10  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-06-19
13:40
Aichi VBL, Nagoya Univ. Fabrication of PtGe/Ge contacts with low hole barrier and its application to metal source/drain Ge p-channel MOSFETs
Yuta Nagatomi, Shintaro Tanaka, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2015-47
The fabrication of PtGe/Ge contacts with low hole barrier height (ΦBP) and its electrical passivation were investigated.... [more] SDM2015-47
pp.47-50
SDM 2014-06-19
09:50
Aichi VBL, Nagoya Univ. Investigation of Al-PMA Effect on Al2O3/GeOx/Ge Gate Stack
Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2014-44
We investigated the Al-PMA effect on Al2O3/GeOX/Ge gate stacks. The Al-PMA is effective for Al2O3/GeOX/Ge gate stacks, s... [more] SDM2014-44
pp.7-10
SDM 2013-06-18
10:55
Tokyo Kikai-Shinko-Kaikan Bldg. Mobility Enhancement for Ge p-MOSFET with Metal Source/Drain by Hf Introduction into Gate Stack
Keisuke Yamamoto, Takahiro Sada, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2013-49
Metal source/drain (S/D) with extremely low parasitic resistance is needed for high performance Ge CMOS. We found that H... [more] SDM2013-49
pp.29-32
SDM 2012-06-21
17:15
Aichi VBL, Nagoya Univ. Alleviation of Fermi level pinning for TiN/Ge contact and its application to MOS device
Keisuke Yamamoto, Masatoshi Iyota, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2012-61
It has been recognized that the formation of a metal/Ge contact with low electron barrier height and low contact resista... [more] SDM2012-61
pp.97-102
SDM 2009-06-19
14:10
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Electrical Characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO2 Interlayers -- Formation of Insulator on Ge Substrate --
Hiroshi Nakashima, Kana Hirayama, Haigui Yang, Dong Wang (Kyushu Univ.) SDM2009-35
We are searching MIS structure with good interface and insulating properties for high mobility Ge channel. Our approach... [more] SDM2009-35
pp.51-56
NS 2009-04-17
09:30
Tokyo Shibaura Institute of Technology (Tokyo) A Communication Quality Control Method for Video Communication by Channel Occupancy Information from IEEE 802.11 MAC Layer
Hiroshi Nakashima, Satoshi Ohzahata, Konosuke Kawashima (Tokyo Univ. of Agr and Tech.) NS2009-11
 [more] NS2009-11
pp.55-58
IN, NS
(Joint)
2009-03-03
10:30
Okinawa Okinawa-Zanpamisaki Royal Hotel A TCP Flow Control Method using Advertised Window based on MAC Layer Information in IEEE 802.11
Kengo Mikoshiba, Hiroshi Nakashima, Satoshi Ohzahata, Konosuke Kawashima (Tokyo Univ. of S and T.) IN2008-138
We propose a %method for improving communication quality by TCP window flow control method with channel occupancy inform... [more] IN2008-138
pp.37-42
IN 2008-12-11
13:55
Hiroshima Hiroshima City University A QoS Adjustment by using TCP Window Flow Control with MAC Layer Information in IEEE 802.11
Kengo Mikoshiba, Hiroshi Nakashima, Satoshi Ohzahata, Konosuke Kawashima (Tokyo University of Agriculture and Technology) IN2008-87
We propose a method improving communication quality by TCP window flow control with channel occupancy information in IEE... [more] IN2008-87
pp.7-12
SDM, OME 2008-04-12
11:00
Okinawa Okinawa Seinen Kaikan Microstructural Analysis of Polycrystalline Silicon Thin Films Formation Behavior during Aluminum Induced Crystallization
Ken-ichi Ikeda (Kyushu Univ.), Takeshi Hirota (Mitsubishi Heavy Industries Ltd.), Kensuke Fujimoto (Kyushu Univ.), Youhei Sugimoto (Seiko Epson Corp.), Naoki Takata (Tokyo Inst. Tech.), Seiichiro Ii (Sojo Univ.), Hideharu Nakashima, Hiroshi Nakashima (Kyushu Univ.) SDM2008-19 OME2008-19
The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) was inves... [more] SDM2008-19 OME2008-19
pp.95-100
CPSY 2007-12-19
16:10
Kyoto Campus Plaza Kyoto [Invited Talk] T2K Open Supercomputer and Its Interconnection Network
Hiroshi Nakashima (Univ. of Kyoto) CPSY2007-47
University of Tsukuba, University of Tokyo and Kyoto University has been pursuing collaborative R\&D work on next genera... [more] CPSY2007-47
p.35
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