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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 13 of 13  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2019-01-29
13:45
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Interface Dipole Modulation Memory based on Multi-stacked HfO2/SiO2 MOS Structure
Noriyuki Miyata (AIST), Jun Nara, Takahiro Yamasaki (NIMS), Kyoko Sumita (AIST), Ryousuke Sano, Hiroshi Nohira (TCU) SDM2018-87
We report an electric-field-induced interface dipole modulation (IDM) in HfO2/1-ML TiO2/SiO2 MOS stack structures. Exper... [more] SDM2018-87
pp.27-30
SDM 2018-06-25
14:30
Aichi Nagoya Univ. VBL3F [Invited Lecture] Recent progress and problem of Diamond device: Crystal quality of bulk and surface
Yukako Kato (AIST), Kouhei Takizawa (Tokyo City Univ.), Toshiharu Makino, Hiromitsu Kato, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki (AIST), Hiroshi Nohira (Tokyo City Univ.)
 [more]
SDM 2014-10-17
10:40
Miyagi Niche, Tohoku Univ. Initial stage of oxidation on 4H-SiC by AR-XPS using angle-resolved X-ray photoelectron spectroscopy
Tomoya Sasago, Shunta Yamahori, Hiroshi Nohira (Tokyo City Univ.) SDM2014-90
We have investigated the initial stage of oxidation on C-face 4H-SiC using angle-resolved X-ray photoelectron spectrosco... [more] SDM2014-90
pp.35-39
SDM 2012-10-25
15:45
Miyagi Tohoku Univ. (Niche) AR-XPS and HAX-PES Studies on Chemical bonding states at SiO2/SiC Interfaces
Hazuki Okada, Arata Komatsu, Masato Watanabe (Tokyo City Univ.), Yudai Izumi, Takayuki Muro (JASRI), Kentaro Sawano, Hiroshi Nohira (Tokyo City Univ.) SDM2012-90
(To be available after the conference date) [more] SDM2012-90
pp.5-9
SDM 2012-06-21
15:05
Aichi VBL, Nagoya Univ. Detection of impurities having various chemical bonding states and their depth profiles in ultra shallow junctions
Kazuo Tsutsui, Jun Kanehara, Youhei Miyata (Tokyo Tech.), Hiroshi Nohira (Tokyo City Univ.), Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita (JASRI), Parhat Ahmet, Kuniyuki Kakushima, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2012-56
Depth profiles of impurity having different chemical bonding states were evaluated by using soft x-ray photoelectron spe... [more] SDM2012-56
pp.69-74
SDM 2011-10-21
09:00
Miyagi Tohoku Univ. (Niche) [Invited Talk] Study of HfO2/Si/strained-Ge/SiGe using Angle Resolved x-ray Photoelectron Spectroscopy
Hiroshi Nohira, Arata Komatsu, Kentarou Nasu, Yusuke Hoshi, Toru Kurebayashi, Kentaro Sawano (Tokyo City Univ.), M. Myronov (Univ. of Warwick), Yasuhiro Shiraki (Tokyo City Univ.) SDM2011-103
We have investigated the influence of Si-cap layer and the post deposition annealing (PDA) on compositional depth profil... [more] SDM2011-103
pp.37-41
SDM 2011-10-21
10:50
Miyagi Tohoku Univ. (Niche) AR-XPS Study on Chemical Bonding State of In0.53Ga0.47As Surface treated by Various Surface Treatments
Yuya Numajiri, Koji Yamashita, Arata Komatsu (Tokyo City Univ.), Darius Zade (FRC. Tokyo Inst. of Tech), Kuniyuki Kakushima (IGSSE. Tokyo Inst. of Tech.), Hiroshi Iwai (FRC. Tokyo Inst. of Tech), Hiroshi Nohira (Tokyo City Univ.) SDM2011-106
We have investigated the effect of HF, HF + air exposure, (NH4)2S and Hexamethydisilazane treatments on the chemical bon... [more] SDM2011-106
pp.53-58
SDM 2011-07-04
11:00
Aichi VBL, Nagoya Univ. Dependence of carrier traps at SiO2/Si interfaces on Si surface orientation studied by XPS time-dependent measurement
Yuri Ishihara (Shibaura Inst.Tech), Yasuhiro Shibuya, Satoshi Igarashi (Tokyo City Univ.), Daisuke Kobayashi (ISAS/JAXA), Hiroshi Nohira (Tokyo City Univ.), Kazuyoshi Ueno (Shibaura Inst.Tech), Kazuyuki Hirose (ISAS/JAXA) SDM2011-55
(To be available after the conference date) [more] SDM2011-55
pp.29-34
SDM, ED 2009-06-25
12:00
Overseas Haeundae Grand Hotel, Busan, Korea Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemical), Masaaki Higuchi (TOSHIBA), Sigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) ED2009-86 SDM2009-81
 [more] ED2009-86 SDM2009-81
pp.157-160
SDM 2008-10-10
16:15
Miyagi Tohoku Univ. Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemi.), Masaaki Higuchi (Toshiba), Shigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2008-167
Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen-hydrogen radicals on Si(... [more] SDM2008-167
pp.69-74
SDM 2007-06-08
09:00
Hiroshima Hiroshima Univ. ( Faculty Club) Study on subnitride and valence band offset at Si3N4 / Si interface formed using nitrogen radicals
Akinobu Teramoto, Takashi Aratani, Masaaki Higuchi (Tohoku Univ.), Eiji Ikenaga (JASRI), Hiroshi Nohira (Musashi Institute of Technology), Shigetoshi Sugawa, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2007-39
An area density of subnitride and a valence band offset in Si3N4 films formed on Si(100), (111), (110) surface by microw... [more] SDM2007-39
pp.43-48
SDM 2006-06-22
09:50
Hiroshima Faculty Club, Hiroshima Univ. The dependence of the intermediate nitridation states density at Si3N4/Si interface on surface Si atoms density
Masaaki Higuchi (Tohoku Univ.), Seiji Shinagawa (Musashi Inst. of Tech.), Akinobu Teramoto (Tohoku Univ.), Hiroshi Nohira (Musashi Inst. of Tech.), Takeo Hattori (Tohoku Univ./Musashi Inst. of Tech.), Eiji Ikenaga (JASRI), Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
 [more] SDM2006-54
pp.71-76
SDM 2006-06-22
15:05
Hiroshima Faculty Club, Hiroshima Univ. XPS studies on barrier height at Au/ultra-thin SiO2 interface
Haruhiko Suzuki, Akira Hasegawa, Hiroshi Nohira, Takeo Hattori (Musashi inst technol), Moroyuki Yamawaki, Nobuko Suzuki (SOKENDAI), Daisuke Kobayashi, Kazuyuki Hirose (ISAS)
As a result of ongoing scale-down of Si-MOS devices, gate SiO2 films have been thinned down to 0.8 nm. In this study, th... [more] SDM2006-63
pp.119-124
 Results 1 - 13 of 13  /   
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