IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2013-11-14
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. Atomistic Study of Sulfur Diffusion and S2 Formation in Silicon during Low-temperature Rapid Thermal Annealing
Takahisa Kanemura, Koichi Kato, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba) SDM2013-102
Sulfur doping at NiSi/Si junction has been found to make a Schottky barrier height ultimately small, revealing almost ze... [more] SDM2013-102
pp.15-20
SDM 2013-02-04
11:25
Tokyo Kikai-Shinko-Kaikan Bldg. *
Takashi Kurusu, Hiroyoshi Tanimoto, Makoto Wada, Atsunobu Isobayashi, Akihiro Kajita, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba)
 [more]
SDM 2009-11-13
11:15
Tokyo Kikai-Shinko-Kaikan Bldg. A Novel Monte Carlo Simulation to Evaluate the Size Effect of Resistivity for Scaled Metallic Interconnects
Takashi Kurusu, Makoto Wada, Noriaki Matsunaga, Akihiro Kajita, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima, Hideki Shibata (Toshiba Corp.) SDM2009-145
Recently, the size effect on resistivity in very narrow and thin metallic wires is a crucial problem on development of s... [more] SDM2009-145
pp.55-60
SDM 2007-06-08
09:50
Hiroshima Hiroshima Univ. ( Faculty Club) Modeling of NBTI Degradation for SiON pMOSFET
Junji Shimokawa, Toshiyuki Enda, Nobutoshi Aoki, Hiroyoshi Tanimoto, Sanae Ito, Yoshiaki Toyoshima (Toshiba) SDM2007-41
For SiO${}_2$ pMOSFETs, the reaction-diffusion model is well used to describe the NBTI degradation theoretically and the... [more] SDM2007-41
pp.55-58
ICD 2006-04-13
11:35
Oita Oita University Technology development of 128Mb-FBC(Floating Body Cell) Memory by 90nm node CMOS process
Hiroomi Nakajima, Yoshihiro Minami, Tomoaki Shino (SoC Center, Toshiba), Atsushi Sakamoto (TJ), Tomoki Higashi (TOSMEC), Naoki Kusunoki, Katsuyuki Fujita, Kosuke Hatsuda, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Mutsuo Morikado, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama (SoC Center, Toshiba)
A 128Mb SOI DRAM with FBC (Floating Body Cell) has been successfully developed for the first time. In order to realize f... [more] ICD2006-5
pp.25-30
 Results 1 - 5 of 5  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan