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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2013-11-14 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Atomistic Study of Sulfur Diffusion and S2 Formation in Silicon during Low-temperature Rapid Thermal Annealing Takahisa Kanemura, Koichi Kato, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba) SDM2013-102 |
Sulfur doping at NiSi/Si junction has been found to make a Schottky barrier height ultimately small, revealing almost ze... [more] |
SDM2013-102 pp.15-20 |
SDM |
2013-02-04 11:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
* Takashi Kurusu, Hiroyoshi Tanimoto, Makoto Wada, Atsunobu Isobayashi, Akihiro Kajita, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba) |
[more] |
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SDM |
2009-11-13 11:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Novel Monte Carlo Simulation to Evaluate the Size Effect of Resistivity for Scaled Metallic Interconnects Takashi Kurusu, Makoto Wada, Noriaki Matsunaga, Akihiro Kajita, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima, Hideki Shibata (Toshiba Corp.) SDM2009-145 |
Recently, the size effect on resistivity in very narrow and thin metallic wires is a crucial problem on development of s... [more] |
SDM2009-145 pp.55-60 |
SDM |
2007-06-08 09:50 |
Hiroshima |
Hiroshima Univ. ( Faculty Club) |
Modeling of NBTI Degradation for SiON pMOSFET Junji Shimokawa, Toshiyuki Enda, Nobutoshi Aoki, Hiroyoshi Tanimoto, Sanae Ito, Yoshiaki Toyoshima (Toshiba) SDM2007-41 |
For SiO${}_2$ pMOSFETs, the reaction-diffusion model is well used to describe the NBTI degradation theoretically and the... [more] |
SDM2007-41 pp.55-58 |
ICD |
2006-04-13 11:35 |
Oita |
Oita University |
Technology development of 128Mb-FBC(Floating Body Cell) Memory by 90nm node CMOS process Hiroomi Nakajima, Yoshihiro Minami, Tomoaki Shino (SoC Center, Toshiba), Atsushi Sakamoto (TJ), Tomoki Higashi (TOSMEC), Naoki Kusunoki, Katsuyuki Fujita, Kosuke Hatsuda, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Mutsuo Morikado, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama (SoC Center, Toshiba) |
A 128Mb SOI DRAM with FBC (Floating Body Cell) has been successfully developed for the first time. In order to realize f... [more] |
ICD2006-5 pp.25-30 |
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