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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, IEE-BMS, IEE-MSS 2022-08-18
14:55
Tokyo Kikai-Shinko-Kaikan Bldg. B3-2
(Primary: On-site, Secondary: Online)
Atmosphere dependence of learning accuracy in ionic liquid-based physical reservoir devices
Masaharu Yonezawa (Tokyo Univ. of Sci./AIST), Hisashi Shima (AIST), Takuma Matsuo (Tokyo Univ. of Sci./AIST), Yasuhisa Naitoh, Hiroyuki Akinaga (AIST), Toshiyuki Itoh (Toyota Physical and Chemical Research Institute), Toshiki Nokami (Tottori Univ.), Masakazu Kobayashi (Tokyo Univ. of Sci./NAGASE & CO., LTD.), Kentaro Kinoshita (Tokyo Univ. of Sci.) ED2022-20
(To be available after the conference date) [more] ED2022-20
pp.13-16
SDM, ICD, ITE-IST [detail] 2018-08-08
09:00
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Talk] Research Progress on Resistance Change Device Based on Oxide Materials -- Application for Non-volatile Memory and Neuromorphic Device --
Hisashi Shima, Makoto Takahashi, Yasuhisa Naitoh, Hiroyuki Akinaga (AIST) SDM2018-36 ICD2018-23
 [more] SDM2018-36 ICD2018-23
pp.59-64
ICD 2018-04-19
13:50
Tokyo   [Invited Talk] Hard- and Soft- Synchronized Developments of Resistive Analog Neuro Devices and Systems
Hiroyuki Akinaga, Hisashi Shima, Yasuhisa Naitoh (AIST), Tetsuya Asai (Hokkaido Univ.) ICD2018-5
Artificial Neural Network (ANN) System for Inference has attracted increasing attention. As widely known, Resistive Ana... [more] ICD2018-5
p.15
ICD 2008-04-18
15:20
Tokyo   [Invited Talk] Electrode Material Dependence on Binary Oxide RRAM Characteristics
Yukio Tamai (Sharp), Hisashi Shima, Hiroyuki Akinaga (AIST), Yasunari Hosoi, Shigeo Ohnishi, Nobuyoshi Awaya (Sharp) ICD2008-15
We have synthesized Ta/Co-O/Pt RRRAM and 20ns high-speed switching and low writing current around 100$\mu$A with excelle... [more] ICD2008-15
pp.79-82
ICD 2007-04-13
13:00
Oita   [Invited Talk] High Speed Unipolar Switching Resistance RAM (RRAM) Technology
Yasunari Hosoi, Yukio Tamai, T. Ohnishi, K. Ishihara, T. Shibuya, Y. Inoue, S. Yamazaki, T.Nakano, Shigeo Ohnishi, Nobuyoshi Awaya (Sharp), I. H. Inoue, Hisashi Shima (AIST(NEDO)), Hiroyuki Akinaga, Hidenori Takagi, Hiroshi Akoh (AIST(CERC)) ICD2007-14
We have successfully achieved high speed (~50 ns) unipolar operation in RRAM devices comprised of titanium oxynitride (T... [more] ICD2007-14
pp.77-82
 Results 1 - 5 of 5  /   
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