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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-06-19
Aichi VBL, Nagoya Univ. First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation
Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.) SDM2015-45
Why is high-quality Si/SiO2 interface readily fabricated by simple thermal oxidation? Even though the question is closel... [more] SDM2015-45
SDM 2014-11-06
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Recent Progress in Electronic Device Materials Design by Computational Physics
Hiroyuki Kageshima (Shimane Univ.) SDM2014-101
In the computational physics, the first-principles calculation method is powerful and attractive because it can precisel... [more] SDM2014-101
ED, SDM 2012-02-07
Hokkaido   Light emission from Silicon quantum-well by tunneling current injection
Jinichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Akira Fujiwara (NTT BRL) ED2011-149 SDM2011-166
We demonstrated electron tunneling spectroscopy of thin silicon-on-insulator (SOI) metal-oxide-semiconductor field-effec... [more] ED2011-149 SDM2011-166
SDM 2011-07-04
Aichi VBL, Nagoya Univ. Structure and formation of epitaxial graphene on SiC(0001)
Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi (NTT Basic Research Labs.), Masao Nagase (Univ. Tokushima) SDM2011-51
Epitaxial graphene growth on SiC(0001) surface is theoretically studied by the first-principles calculation. It is found... [more] SDM2011-51
SDM, ED 2009-06-24
Overseas Haeundae Grand Hotel, Busan, Korea [Invited Talk] Metrology of microscopic properties of graphene on SiC
Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, Hiroshi Yamaguchi (NTT BRL) ED2009-61 SDM2009-56
Graphene has recently attracted a lot of research interest because of its superior electric properties. Thermally grown ... [more] ED2009-61 SDM2009-56
SDM 2009-06-19
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo First-Principles Calculations for Interfacial Reaction during Si Oxidation
Toru Akiyama (Mie Univ.), Hiroyuki Kageshima (NTT Corp.), Masashi Uematsu (Keio Univ.), Tomonori Ito (Mie Univ.) SDM2009-28
The interfacial reaction processes during Si oxidation are investigated based on first-principles total-energy electroni... [more] SDM2009-28
SDM, ED 2009-02-26
Hokkaido Hokkaido Univ. Magnetic properties of Mn-implanyed SOI layers
Yasuaki Miyazaki (NTT/Keio Univ.), Yukinori Ono, Hiroyuki Kageshima, Masao Nagase, Akira Fujiwara (NTT), Eiji Ohta (Keio Univ.) ED2008-225 SDM2008-217
 [more] ED2008-225 SDM2008-217
 Results 1 - 7 of 7  /   
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