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Conference Papers (Available on Advance Programs) (Sort by: Date Descending)

Committee	Date Time	Place		Paper Title / Authors	Abstract	Paper #
SS	2013-05-10 11:15	Kagawa	Kagawa University (Saiwaimachi)	Influence of Organizational Change on Product Metrics and Defects Seiji Sato, Hironori Washizaki, Yoshiaki Fukazawa (Waseda Univ.), Sakae Inoue, Hiroyuki Ono, Yoshiiku Hanai, Mikihiko Yamamoto (Fujitsu) SS2013-11	In software development, the development organization sometimes changes, but its influence on software quality has not y... [more]	SS2013-11 pp.61-66
PN, EMT, LQE, OPE, MWP, EST, IEE-EMT [detail]	2013-01-24 13:50	Osaka	Osaka Univ. (Suita)	Evaluation on Radiation Characteristics of Metal Plate Lens with Closely Placed Primary Radiator Hiroyuki Onoue, Nayuta Kamiya, Ryosuke Suga, Osamu Hashimoto (Aogaku Univ.) PN2012-42 OPE2012-151 LQE2012-143 EST2012-78 MWP2012-60	This paper presents a metal plate lens with closely placed primary radiator by considering radiated electric field near ... [more]	PN2012-42 OPE2012-151 LQE2012-143 EST2012-78 MWP2012-60 pp.73-78
ICD, SDM	2008-07-18 15:05	Tokyo	Kikai-Shinko-Kaikan Bldg.	Impact of Tantalum Composition in TaCx/HfSiON Gate Stack on Device Performance of Aggressively Scaled CMOS Devices with SMT and Strained CESL Masakazu Goto, Kosuke Tatsumura, Shigeru Kawanaka, Kazuaki Nakajima, Reika Ichihara, Yasuhito Yoshimizu, Hiroyuki Onoda, Koji Nagatomo, Toshiyuki Sasaki, Takashi Fukushima, Akiko Nomachi, Seiji Inumiya, Tomonori Aoyama, Masato Koyama, Yoshiaki Toyoshima (Toshiba Corp.) SDM2008-147 ICD2008-57	We report TaCx/HfSiON gate stack CMOS device with simplified gate 1st process from the viewpoints of fixed charge genera... [more]	SDM2008-147 ICD2008-57 pp.109-114
CPM, ED, LQE	2007-10-11 15:20	Fukui	Fukui Univ.	Effects of trace moisture in NH3 gas on electro-luminescence intensity of InGaN LED -- Moisture control in NH3 gas for MOVPE growth of LED structure -- Hirotaka Mangyou, Hiroyuki Ono, Yoshihiko Kobayashi, Koh Matsumoto, Kazunobu Shibuya (TAIYO NIPPON SANSO) ED2007-160 CPM2007-86 LQE2007-61	[more]	ED2007-160 CPM2007-86 LQE2007-61 pp.25-28
ICD, SDM	2007-08-24 14:50	Hokkaido	Kitami Institute of Technology	0.7 V SRAM Technology with Stress-Enhanced Dopant Segregated Schottky (DSS) Source/Drain Transistors for 32 nm Node Hiroyuki Onoda, Katsura Miyashita, Takeo Nakayama, Tomoko Kinoshita, Hisashi Nishimura, Atsushi Azuma, Seiji Yamada, Fumitomo Matsuoka (Toshiba) SDM2007-165 ICD2007-93	For the fist time, low supply voltage SRAM operation with stress-enhanced dopant segregated Schottky (DSS) source/drain ... [more]	SDM2007-165 ICD2007-93 pp.131-134
VLD, ICD, DC, IPSJ-SLDM	2005-11-30 14:40	Fukuoka	Kitakyushu International Conference Center	40-Gbps 4:1 MUX/1:4 DEMUX in 90-nm standard CMOS technology Kouichi Kanda, Daisuke Yamazaki, Takuji Yamamoto, Minoru Horinaka, Junji Ogawa, Hirotaka Tamura, Hiroyuki Onodera (Fujitsu Labs.)	[more]	VLD2005-55 ICD2005-150 DC2005-32 pp.7-14

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