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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM 2008-07-18
15:05
Tokyo Kikai-Shinko-Kaikan Bldg. Impact of Tantalum Composition in TaCx/HfSiON Gate Stack on Device Performance of Aggressively Scaled CMOS Devices with SMT and Strained CESL
Masakazu Goto, Kosuke Tatsumura, Shigeru Kawanaka, Kazuaki Nakajima, Reika Ichihara, Yasuhito Yoshimizu, Hiroyuki Onoda, Koji Nagatomo, Toshiyuki Sasaki, Takashi Fukushima, Akiko Nomachi, Seiji Inumiya, Tomonori Aoyama, Masato Koyama, Yoshiaki Toyoshima (Toshiba Corp.) SDM2008-147 ICD2008-57
We report TaCx/HfSiON gate stack CMOS device with simplified gate 1st process from the viewpoints of fixed charge genera... [more] SDM2008-147 ICD2008-57
pp.109-114
ICD, SDM 2007-08-24
14:50
Hokkaido Kitami Institute of Technology 0.7 V SRAM Technology with Stress-Enhanced Dopant Segregated Schottky (DSS) Source/Drain Transistors for 32 nm Node
Hiroyuki Onoda, Katsura Miyashita, Takeo Nakayama, Tomoko Kinoshita, Hisashi Nishimura, Atsushi Azuma, Seiji Yamada, Fumitomo Matsuoka (Toshiba) SDM2007-165 ICD2007-93
For the fist time, low supply voltage SRAM operation with stress-enhanced dopant segregated Schottky (DSS) source/drain ... [more] SDM2007-165 ICD2007-93
pp.131-134
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