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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, OPE, EMD, R, CPM 2016-08-25
14:25
Hokkaido   [Invited Talk] Recent progress in ultraviolet AlGaN laser diodes
Harumasa Yoshida, Hiroyuki Taketomi, Yuta Aoki, Yasufumi Takagi, Atsushi Sugiyama, Masakazu Kuwabara, Yoji Yamashita, Satoru Okawara, Junya Maeda (Hamamatsu Photonics) R2016-26 EMD2016-30 CPM2016-39 OPE2016-60 LQE2016-35
We will talk about the recent progress in ultraviolet (UV) laser diodes (LDs). The watt-class peak output power has been... [more] R2016-26 EMD2016-30 CPM2016-39 OPE2016-60 LQE2016-35
pp.35-40
ED, SDM 2010-07-02
10:50
Tokyo Tokyo Inst. of Tech. Ookayama Campus Characterization of deep electron levels of AlGaN grown by MOVPE
Kimihito Ooyama (Hokkaido Univ./SMM), Katsuya Sugawara (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ./JST) ED2010-107 SDM2010-108
Deep electronic levels of Al_xGa_{1-x}N (0.25 <x < 0.60) were investigated by using deep level transient spectroscopy (D... [more] ED2010-107 SDM2010-108
pp.249-252
ED, LQE, CPM 2009-11-19
09:50
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) MOVPE growth and optical properties of AlGaN on AlN/sapphire
Yuki Shimahara, Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.) ED2009-130 CPM2009-104 LQE2009-109
We performed growth of AlGaN on AlN/sapphire substrate as an underlying layer by low-pressure MOVPE with in-situ monitor... [more] ED2009-130 CPM2009-104 LQE2009-109
pp.9-12
ED, LQE, CPM 2009-11-20
11:45
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Surface properties and deep electronic levels of AlGaN with high Al compositions
Katsuya Sugawara, Toshiharu Kubo (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ.) ED2009-152 CPM2009-126 LQE2009-131
 [more] ED2009-152 CPM2009-126 LQE2009-131
pp.115-118
ED, CPM, SDM 2009-05-15
13:00
Aichi Satellite Office, Toyohashi Univ. of Technology MOVPE growth and deep-ultraviolet chathodoluminescence of AlGaN on AlN/sapphire
Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.) ED2009-32 CPM2009-22 SDM2009-22
A high-quality AlGaN with high Al mole fraction is required for improvement of device performance such as light-emitting... [more] ED2009-32 CPM2009-22 SDM2009-22
pp.77-81
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