|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, OPE, EMD, R, CPM |
2016-08-25 14:25 |
Hokkaido |
|
[Invited Talk]
Recent progress in ultraviolet AlGaN laser diodes Harumasa Yoshida, Hiroyuki Taketomi, Yuta Aoki, Yasufumi Takagi, Atsushi Sugiyama, Masakazu Kuwabara, Yoji Yamashita, Satoru Okawara, Junya Maeda (Hamamatsu Photonics) R2016-26 EMD2016-30 CPM2016-39 OPE2016-60 LQE2016-35 |
We will talk about the recent progress in ultraviolet (UV) laser diodes (LDs). The watt-class peak output power has been... [more] |
R2016-26 EMD2016-30 CPM2016-39 OPE2016-60 LQE2016-35 pp.35-40 |
ED, SDM |
2010-07-02 10:50 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Characterization of deep electron levels of AlGaN grown by MOVPE Kimihito Ooyama (Hokkaido Univ./SMM), Katsuya Sugawara (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ./JST) ED2010-107 SDM2010-108 |
Deep electronic levels of Al_xGa_{1-x}N (0.25 <x < 0.60) were investigated by using deep level transient spectroscopy (D... [more] |
ED2010-107 SDM2010-108 pp.249-252 |
ED, LQE, CPM |
2009-11-19 09:50 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
MOVPE growth and optical properties of AlGaN on AlN/sapphire Yuki Shimahara, Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.) ED2009-130 CPM2009-104 LQE2009-109 |
We performed growth of AlGaN on AlN/sapphire substrate as an underlying layer by low-pressure MOVPE with in-situ monitor... [more] |
ED2009-130 CPM2009-104 LQE2009-109 pp.9-12 |
ED, LQE, CPM |
2009-11-20 11:45 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Surface properties and deep electronic levels of AlGaN with high Al compositions Katsuya Sugawara, Toshiharu Kubo (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ.) ED2009-152 CPM2009-126 LQE2009-131 |
[more] |
ED2009-152 CPM2009-126 LQE2009-131 pp.115-118 |
ED, CPM, SDM |
2009-05-15 13:00 |
Aichi |
Satellite Office, Toyohashi Univ. of Technology |
MOVPE growth and deep-ultraviolet chathodoluminescence of AlGaN on AlN/sapphire Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.) ED2009-32 CPM2009-22 SDM2009-22 |
A high-quality AlGaN with high Al mole fraction is required for improvement of device performance such as light-emitting... [more] |
ED2009-32 CPM2009-22 SDM2009-22 pp.77-81 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|