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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW, ED |
2009-01-14 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
GaN-based Natural Super Junction Diodes Hidetoshi Ishida, Daisuke Shibata, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2008-202 MW2008-167 |
We propose a new breakdown mechanism of GaN-based electron devices called “Natural Super Junction”. The junction model i... [more] |
ED2008-202 MW2008-167 pp.23-27 |
LQE, ED, CPM |
2008-11-28 15:20 |
Aichi |
Nagoya Institute of Technology |
Depth profiles of strain in AlGaN/GaN heterostructures grown on si by electron backscatter diffraction technique Teruki Ishido, Hisayoshi Matsuo, Takuma Katayama, Tetsuzo Ueda, Kaoru Inoue, Daisuke Ueda (Panasonic) ED2008-181 CPM2008-130 LQE2008-125 |
(To be available after the conference date) [more] |
ED2008-181 CPM2008-130 LQE2008-125 pp.145-148 |
SDM, ED |
2008-07-11 10:50 |
Hokkaido |
Kaderu2・7 |
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92 |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] |
ED2008-73 SDM2008-92 pp.177-181 |
ED, MW |
2008-01-16 16:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
10400V Blocking Voltage AlGaN/GaN Power HFET Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144 |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick... [more] |
ED2007-213 MW2007-144 pp.39-43 |
ED, SDM |
2007-06-25 13:00 |
Overseas |
Commodore Hotel Gyeongju Chosun, Gyeongju, Korea |
[Invited Talk]
AlGaN/GaN Power Transistors for power switching applications Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Tomohiro Murata, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita) |
Recently developed normally-off transistor named GIT (Gate Injection Transistor) and novel passivation technique using p... [more] |
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MW, ED |
2007-01-19 14:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Improvement of Breakdown Voltage in Double-Heterojunction III-N FET with AlN Buffer Layer Hisayoshi Matsuo, Hiroaki Ueno, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric Industrial Co., Ltd.) |
[more] |
ED2006-234 MW2006-187 pp.189-192 |
MW, ED |
2007-01-19 14:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) |
We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (Gate Injection Transisto... [more] |
ED2006-235 MW2006-188 pp.193-197 |
ED, CPM, LQE |
2006-10-05 14:40 |
Kyoto |
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GaN Vertical Schottky Barrier Diodes with Pseudo-SuperJunction Structures Kazushi Nakazawa, Hiroaki Ueno, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric) |
Gallium Nitride (GaN) has been widely investigated for future high power devices owing to its high breakdown field with ... [more] |
ED2006-156 CPM2006-93 LQE2006-60 pp.23-27 |
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