IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2009-01-14
15:25
Tokyo Kikai-Shinko-Kaikan Bldg GaN-based Natural Super Junction Diodes
Hidetoshi Ishida, Daisuke Shibata, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2008-202 MW2008-167
We propose a new breakdown mechanism of GaN-based electron devices called “Natural Super Junction”. The junction model i... [more] ED2008-202 MW2008-167
pp.23-27
LQE, ED, CPM 2008-11-28
15:20
Aichi Nagoya Institute of Technology Depth profiles of strain in AlGaN/GaN heterostructures grown on si by electron backscatter diffraction technique
Teruki Ishido, Hisayoshi Matsuo, Takuma Katayama, Tetsuzo Ueda, Kaoru Inoue, Daisuke Ueda (Panasonic) ED2008-181 CPM2008-130 LQE2008-125
(To be available after the conference date) [more] ED2008-181 CPM2008-130 LQE2008-125
pp.145-148
SDM, ED 2008-07-11
10:50
Hokkaido Kaderu2・7 High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation
Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] ED2008-73 SDM2008-92
pp.177-181
ED, MW 2008-01-16
16:15
Tokyo Kikai-Shinko-Kaikan Bldg. 10400V Blocking Voltage AlGaN/GaN Power HFET
Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick... [more] ED2007-213 MW2007-144
pp.39-43
ED, SDM 2007-06-25
13:00
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea [Invited Talk] AlGaN/GaN Power Transistors for power switching applications
Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Tomohiro Murata, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita)
Recently developed normally-off transistor named GIT (Gate Injection Transistor) and novel passivation technique using p... [more]
MW, ED 2007-01-19
14:25
Tokyo Kikai-Shinko-Kaikan Bldg. Improvement of Breakdown Voltage in Double-Heterojunction III-N FET with AlN Buffer Layer
Hisayoshi Matsuo, Hiroaki Ueno, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric Industrial Co., Ltd.)
 [more] ED2006-234 MW2006-187
pp.189-192
MW, ED 2007-01-19
14:50
Tokyo Kikai-Shinko-Kaikan Bldg. A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection
Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic)
We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (Gate Injection Transisto... [more] ED2006-235 MW2006-188
pp.193-197
ED, CPM, LQE 2006-10-05
14:40
Kyoto   GaN Vertical Schottky Barrier Diodes with Pseudo-SuperJunction Structures
Kazushi Nakazawa, Hiroaki Ueno, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric)
Gallium Nitride (GaN) has been widely investigated for future high power devices owing to its high breakdown field with ... [more] ED2006-156 CPM2006-93 LQE2006-60
pp.23-27
 Results 1 - 8 of 8  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan