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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM 2009-07-17
12:00
Tokyo Tokyo Institute of Technology Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode
Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hitoshi Kume, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) SDM2009-112 ICD2009-28
We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] SDM2009-112 ICD2009-28
pp.79-83
ICD 2005-04-14
16:15
Fukuoka   4Gb Multilevel AG-AND Flash Memory with 10MB/s Programming Throughput
Hideaki Kurata, Yoshitaka Sasago, Kazuo Otsuga, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi, Hitoshi Kume (Hitachi), Kazuki Homma, Kenji Kozakai, Satoshi Noda, Teruhiko Ito, Masahiro Shimizu, Yoshihiro Ikeda, Osamu Tsuchiya, Kazunori Furusawa (RENESAS)
We fabricated a 4Gb multilevel AG-AND flash memory using 90nm CMOS technology. By using an inversion-layer local-bitline... [more] ICD2005-11
pp.53-58
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