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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ED (Workshop) |
2012-06-29 10:15 |
Okinawa | Okinawa Seinen-kaikan | Novel Tunneling Field-Effect Transistor with Sigma-shape Embedded SiGe Sources and Recessed Channel Min-Chul Sun (SNU and SEC), Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (SNU) |
A novel tunneling field-effect transistor (TFET) featuring the sigma-shape embedded SiGe sources and recessed channel is... [more] | |
| ED, SDM | 2010-06-30 14:25 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | A New Cone-Type 1T DRAM Cell Gil Sung Lee, Doo-Hyun Kim, Jang-Gn Yun, Jung Hoon Lee, Yoon Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.)  ED2010-55 SDM2010-56 |
[more] | ED2010-55 SDM2010-56 pp.23-25 |
| ED, SDM | 2010-07-02 15:35 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect Yoon Kim, Jang-Gn Yun, Jung Hoon Lee, Gil Sung Lee, Se Hwan Park, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2010-99 SDM2010-100 |
[more] | ED2010-99 SDM2010-100 pp.217-220 |
| SDM, ED | 2009-06-26 11:45 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Device. Seongjae Cho, Jung Hoon Lee, Yun Kim, Jang-Gn Yun, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2009-101 SDM2009-96 |
[more] | ED2009-101 SDM2009-96 pp.219-222 |
| SDM, ED | 2008-07-10 09:30 |
Hokkaido | Kaderu２・７ | 3-dimensional Terraced NAND(3D TNAND) Flash Memory Yoon Kim, Gil-Seong Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2008-56 SDM2008-75 |
We propose the 3-dimensional terraced NAND flash memory. It has a vertical channel so it can be possible to make a enoug... [more] | ED2008-56 SDM2008-75 pp.85-88 |
| SDM, ED | 2008-07-10 10:15 |
Hokkaido | Kaderu２・７ | Design of Vertical Nonvolatile Memory Device Considering Gate-Induced Barrier Lowering(GIBL) Seongjae Cho, Il Han Park, Jung Hoon Lee, Gil Sung Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2008-58 SDM2008-77 |
Recently, various 3-D nonvolatile memory (NVM) devices have been researched for improving the degree of integration. NVM... [more] | ED2008-58 SDM2008-77 pp.95-99 |
| SDM, ED | 2008-07-11 11:20 |
Hokkaido | Kaderu２・７ | Implementation of Channel Thermal Noise Model in CMOS RFIC Design Jongwook Jeon, Ickhyun Song, Hyungcheol Shin (Seoul National Univ.) ED2008-84 SDM2008-103 |
Abstract - In this paper, a simple channel thermal noise model for short-channel MOSFET is applied to the RF circuit des... [more] | ED2008-84 SDM2008-103 pp.239-242 |
| SDM, ED | 2008-07-11 15:05 |
Hokkaido | Kaderu２・７ | 24 GHz Low Noise Amplifier Design in 65 nm CMOS Technology with Inter-Stage Matching Optimization Ickhyun Song, Hakchul Jung, Hee-Sauk Jhon, Minsuk Koo, Hyungcheol Shin (Seoul National Univ.) ED2008-96 SDM2008-115 |
2-stage 24 GHz low noise amplifier (LNA) was designed using 65 nm RF CMOS technology. Since conventional topology with i... [more] | ED2008-96 SDM2008-115 pp.301-304 |
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