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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED 2009-06-26
10:00		 Overseas Haeundae Grand Hotel, Busan, Korea Multi-level reading method by using PCI(Paierd Cell Interference) in vertical NAND flash memory.
Yoon Kim, Seongjae Cho, Jang-Gn Yun, Il Han Park, Gil Sung Lee, Doo-Hyun Kim, Dong Hua Li, Se Hwan Park, Wandong Kim, Wonbo Shim, Byung-Gook Park (Seoul National Univ.) ED2009-96 SDM2009-91		  [more] ED2009-96 SDM2009-91
pp.197-200
SDM, ED 2008-07-10
09:15		 Hokkaido Kaderu２・７ Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memories
Doo-Hyun Kim, Il Han Park, Byung-Gook Park (Seoul National Univ.) ED2008-55 SDM2008-74		 This paper presents a detailed study of the retention characteristics in scaled multi-bit SONOS flash memories. By calcu... [more] ED2008-55 SDM2008-74
pp.81-84
SDM, ED 2008-07-10
10:15		 Hokkaido Kaderu２・７ Design of Vertical Nonvolatile Memory Device Considering Gate-Induced Barrier Lowering(GIBL)
Seongjae Cho, Il Han Park, Jung Hoon Lee, Gil Sung Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2008-58 SDM2008-77		 Recently, various 3-D nonvolatile memory (NVM) devices have been researched for improving the degree of integration. NVM... [more] ED2008-58 SDM2008-77
pp.95-99
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