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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2009-06-19
15:10		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics
Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete) SDM2009-38		 We have systematically studied the effect of post deposition annealing (PDA) for Al2O3-capped HfO2 on flatband voltage (... [more] SDM2009-38
pp.67-70
SDM 2006-06-21
15:20		 Hiroshima Faculty Club, Hiroshima Univ. Work-function engineering of poly-Si gate by Fermi level pinning and its impact on low power CMOSFET
Yasuhiro Shimamoto (Hitachi), Jiro Yugami, Masao Inoue, Masaharu Mizutani, Takashi Hayashi, Masahiro Yoneda (Renesas) 		 [more] SDM2006-47
pp.31-35
ICD, SDM 2005-08-19
11:35		 Hokkaido HAKODATE KOKUSAI HOTEL Gate work-function modulation in SiON/poly-Si gate stacks, and its impact on low power devices -- Advantage of sub-monolayer Hf at SiON/poly-Si interface --
Jiro Yugami (Renesas), Yasuhiro Shimamoto (Hitachi), Masao Inoue, Masaharu Mizutani, Takashi Hayashi, Katsuya Shiga, Fumiko Fujita, Jyunichi Tuchimoto, Yoshikazu Ohno, Masahiro Yoneda (Renesas) 		Gate work-function (WF) is controlled by incorporating sub-monolayer Hf at SiON/poly-Si interface. This technique provid... [more] SDM2005-149 ICD2005-88
pp.37-42
ICD, SDM 2005-08-19
15:15		 Hokkaido HAKODATE KOKUSAI HOTEL High-k; Last Card for the Leakage Currents
Tadayoshi Enomoto (Chuo Univ.), Mariko Takayanagi (Toshiba), Shigeo Satoh (Fujitu), Koji Nii (Renesas), Akira Nishiyama (Toshiba), ハセ タカシ (NEC), Mototsugu Hamada (Toshiba), Jiro Yugami (Renesas) 		(Advance abstract in Japanese is available) [more] SDM2005-155 ICD2005-94
pp.73-78
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