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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, CPM, ED 2020-11-26
15:30		 Online Online Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment
Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63		 With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading ... [more] ED2020-12 CPM2020-33 LQE2020-63
pp.45-48
LQE, CPM, ED 2020-11-27
11:20		 Online Online Improved performance in GaN-based HEMTs with insulated gate structures
Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-16 CPM2020-37 LQE2020-67		 Several groups have reported improved performance in GaN-based transistors employing metal-insulator-semiconductor (MIS)... [more] ED2020-16 CPM2020-37 LQE2020-67
pp.60-62
CPM, LQE, ED 2016-12-12
16:10		 Kyoto Kyoto University AlGaN/GaN HEMTs with High Breakdown Voltage and High Drain Current
Yudai Suzuki, Taisei Yamazaki, Shinya Makino, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara (Univ.Fukui) ED2016-64 CPM2016-97 LQE2016-80		 We have studied the characteristics of off-state breakdown voltage and on-state resistance of large gate-periphery AlGaN... [more] ED2016-64 CPM2016-97 LQE2016-80
pp.35-39
CPM 2007-11-17
14:40		 Niigata Nagaoka University of Technology Electrical properties of ZnSnAs2 thin films grown by MBE
Joel T. Asubar, Tadasuke Yokoyama, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. of Tech.) CPM2007-125		 Ternary ZnSnAs2 thin films were grown on n-type and semi-insulating (001) InP substrates by molecular beam epitaxy using... [more] CPM2007-125
pp.103-107
CPM 2007-11-17
15:05		 Niigata Nagaoka University of Technology MBE growth and low-temperature thermal annealing of ferromagnetic semiconductor (Ga,Mn)As/Zn-doped-GaAs superlattice structures
Hisayuki Nakagawa, Joel T. Asubar, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. of Tech.) CPM2007-126		 We prepared the superlattice (SL) structure of ferromagnetic semiconductor (Ga,Mn)As and p-type GaAs spacer layer by MBE... [more] CPM2007-126
pp.109-113
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