Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
VLD, DC, RECONF, ICD, IPSJ-SLDM (Joint) [detail] |
2021-12-01 09:20 |
Online |
Online |
Soft Errors on Flip-flops Depending on Circuit and Layout Structures Estimated by TCAD Simulations Moeka Kotani, Ryuichi Nakajima (KIT), Kazuya Ioki (ROHM), Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2021-17 ICD2021-27 DC2021-23 RECONF2021-25 |
We compare the soft error tolerance of conventional flip-flops (FFs) and the proposed radiation-hard FF with small area,... [more] |
VLD2021-17 ICD2021-27 DC2021-23 RECONF2021-25 pp.1-6 |
VLD, DC, RECONF, ICD, IPSJ-SLDM (Joint) [detail] |
2020-11-18 14:00 |
Online |
Online |
Measurement Results of Total Ionizing Dose Effect on Ring Oscillators Fabricated by a Thin-BOX FDSOI Process for Outer-space Mission Takashi Yoshida, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2020-30 ICD2020-50 DC2020-50 RECONF2020-49 |
The Total Ionizing Dose (TID) effect is one of the major concerns for semiconductor devices in outer space, where high a... [more] |
VLD2020-30 ICD2020-50 DC2020-50 RECONF2020-49 pp.110-114 |
IPSJ-SLDM, RECONF, VLD, CPSY, IPSJ-ARC [detail] |
2020-01-24 15:25 |
Kanagawa |
Raiosha, Hiyoshi Campus, Keio University |
Measuring SER by Neutron Irradiation Between Volatile SRAM-based and Nonvolatile Flash-based FPGAs Yuya Kawano, Yuto Tsukita, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2019-90 CPSY2019-88 RECONF2019-80 |
[more] |
VLD2019-90 CPSY2019-88 RECONF2019-80 pp.217-222 |
VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2018-12-07 14:10 |
Hiroshima |
Satellite Campus Hiroshima |
Ultra-long-term Measurement of Aging Degradation on Ring Oscillators by using FPGA and Micro Controller Hiroki Nakano (KIT), Ryo Kishida (TUS), Jun Furuta, Kazutoshi Kobayashi (KIT) CPM2018-95 ICD2018-56 IE2018-74 |
[more] |
CPM2018-95 ICD2018-56 IE2018-74 pp.31-36 |
VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2018-12-07 13:45 |
Hiroshima |
Satellite Campus Hiroshima |
A Radiation-hard Low-delay Flip-Flop with Stacking Structure for SOI Process Mitsunori Ebara, Kodai Yamada, Jun Furuta, Kazutoshi Kobayashi (Kyoto Inst. of Tech.) VLD2018-69 DC2018-55 |
[more] |
VLD2018-69 DC2018-55 pp.203-208 |
SDM, ICD, ITE-IST [detail] |
2018-08-07 11:30 |
Hokkaido |
Hokkaido Univ., Graduate School of IST M Bldg., M151 |
Comparison of Sensitivity to Soft Errors of NMOS and PMOS Transistors by Using Three Types of Stacking Latches in an FDSOI process Kodai Yamada, Jun Furuta, Kazutoshi Kobayashi (KIT) SDM2018-28 ICD2018-15 |
(To be available after the conference date) [more] |
SDM2018-28 ICD2018-15 pp.15-20 |
VLD, HWS (Joint) |
2018-02-28 17:20 |
Okinawa |
Okinawa Seinen Kaikan |
Evaluation of a Radiation-Hardened Method and Soft Error Resilience on Stacked Transistors in 28/65 nm FDSOI Processes Haruki Maruoka, Kodai Yamada, Mitsunori Ebara, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2017-103 |
The continuous downscaling of transistors has resulted in an increase of reliability issues for semiconductor chips. In ... [more] |
VLD2017-103 pp.85-90 |
VLD, HWS (Joint) |
2018-02-28 17:45 |
Okinawa |
Okinawa Seinen Kaikan |
Evaluation of Soft Error Tolerance on Flip-Flop depending on 65 nm FDSOI Transistor Threshold-Voltage Mitsunori Ebara, Haruki Maruoka, Kodai Yamada, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2017-104 |
Moore's Law has been miniaturizing integrated circuits, which
can make a lot of high performance devices such as PCs an... [more] |
VLD2017-104 pp.91-96 |
VLD, DC, CPSY, RECONF, CPM, ICD, IE (Joint) [detail] |
2016-11-28 14:15 |
Osaka |
Ritsumeikan University, Osaka Ibaraki Campus |
Evaluation of Radiation-Hard Circuit Structures in a FDSOI Process by TCAD Simulations Kodai Yamada, Haruki Maruoka, Shigehiro Umehara, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2016-49 DC2016-43 |
According to the Moore's law, LSIs are miniaturized and the
reliability of LSIs is degraded. To improve the tolerance ... [more] |
VLD2016-49 DC2016-43 pp.31-36 |
VLD, DC, CPSY, RECONF, CPM, ICD, IE (Joint) [detail] |
2016-11-28 14:40 |
Osaka |
Ritsumeikan University, Osaka Ibaraki Campus |
Evaluation of Soft Error Hardness of FinFET and FDSOI Processes by the PHITS-TCAD Simulation System Shigehiro Umehara, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2016-50 DC2016-44 |
The impact of soft errors has been serious with process scaling of integrated circuits. Simulation methods for soft erro... [more] |
VLD2016-50 DC2016-44 pp.37-41 |
VLD, DC, CPSY, RECONF, CPM, ICD, IE (Joint) [detail] |
2016-11-28 15:05 |
Osaka |
Ritsumeikan University, Osaka Ibaraki Campus |
Evaluation of Soft Error Rates of FlipFlops on FDSOI by Heavy Ions Masashi Hifumi, Shigehiro Umehara, Haruki Maruoka, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2016-51 DC2016-45 |
We evaluate tolerance for soft errors of FFs on a 28/65 nm FDSOI. We fabricated three different layouts of non-redundant... [more] |
VLD2016-51 DC2016-45 pp.43-48 |
VLD, DC, CPSY, RECONF, CPM, ICD, IE (Joint) [detail] |
2016-11-28 15:30 |
Osaka |
Ritsumeikan University, Osaka Ibaraki Campus |
Circuit Simulation Method Using Bimodal Defect-Centric Model of Random Telegraph Noise on 40 nm SiON Process Michitarou Yabuuchi, Azusa Oshima, Takuya Komawaki, Kazutoshi Kobayashi, Ryo Kishida, Jun Furuta (KIT), Pieter Weckx (KUL/IMEC), Ben Kaczer (IMEC), Takashi Matsumoto (Univ. of Tokyo), Hidetoshi Onodera (Kyoto Univ.) VLD2016-52 DC2016-46 |
We propose a circuit analysis method using the bimodal RTN (random telegraph
noise) model of the defect-centric distri... [more] |
VLD2016-52 DC2016-46 pp.49-54 |
ICD, CPSY |
2015-12-18 09:00 |
Kyoto |
Kyoto Institute of Technology |
Evaluation of Soft Error Tolerance of Redundant Flip-Flop in 65nm Bulk and FD-SOI Processes. Eiji Sonezaki, Kubota Kanto, Masaki Masuda, Shohei Kanda, Jun Furuta, Kazutoshi Kobayashi (KIT) ICD2015-83 CPSY2015-96 |
According to process down scaling, LSI becomes less reliable for soft errors. To increase the tolerance of FFs for soft ... [more] |
ICD2015-83 CPSY2015-96 pp.69-74 |
ICD, CPSY |
2015-12-18 12:40 |
Kyoto |
Kyoto Institute of Technology |
[Invited Talk]
Evaluation of Radiation-induced Soft Errors on LSI Jun Furuta (KIT) ICD2015-87 CPSY2015-100 |
[more] |
ICD2015-87 CPSY2015-100 pp.87-92 |
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM (Joint) [detail] |
2014-11-26 11:35 |
Oita |
B-ConPlaza |
Voltage Dependence of Single Event Transient Pulses on 65nm Silicon-on-Thin-BOX and Bulk Processes Eiji Sonezaki, Kuiyuan Zhang, Jun Furuta, Kazutoshi Kobayashi (Kyoto Inst. of Tech.) VLD2014-84 DC2014-38 |
Recently, the growth of power consumption has been serious by process
scaling. The lower voltage is most effective to i... [more] |
VLD2014-84 DC2014-38 pp.93-97 |
VLD |
2014-03-05 10:25 |
Okinawa |
Okinawa Seinen Kaikan |
Evaluation of Multiple Cell Upsets Considering Parasitic Bipolar Effects Jun Furuta (Kyoto Univ.), Kazutoshi Kobayashi (Kyoto Inst. of Tech.), Hidetoshi Onodera (Kyoto Univ.) VLD2013-157 |
As a result of the process scaling, radiation-induced Multiple Cell
Upsets (MCUs) become major issue for LSI reliabilit... [more] |
VLD2013-157 pp.125-130 |
ICD |
2012-12-18 11:45 |
Tokyo |
Tokyo Tech Front |
A 65 nm Low-Power Adaptive-Coupling Redundant Flip-Flop Masaki Masuda, Kanto Kubota, Ryosuke Yamamoto (KIT), Jun Furuta (Kyoto Univ.), Kazutoshi Kobayashi (KIT), Hidetoshi Onodera (Kyoto Univ.) ICD2012-117 |
We propose a low-power redundant flip-flop to be operated with high reliability over 1 GHz clock frequency based on the ... [more] |
ICD2012-117 pp.109-113 |
ICD |
2011-12-16 09:55 |
Osaka |
|
A 65-nm Radiation-Hard Flip-Flop Tolerant to Multiple Cell Upsets Ryosuke Yamamoto, Chikara Hamanaka (Kyoto Inst. of Tech.), Jun Furuta (Kyoto Univ.), Kazutoshi Kobayashi (Kyoto Inst. of Tech.), Hidetoshi Onodera (Kyoto Univ.) ICD2011-129 |
MCUs in redundant FFs is a dominant factor in a current deep-submicron process. A layout structure to avoid MCUs is prop... [more] |
ICD2011-129 pp.131-136 |
ICD, SDM |
2010-08-27 14:10 |
Hokkaido |
Sapporo Center for Gender Equality |
A 65nm Bistable Cross-coupled Dual Modular Redundancy Flip-Flop Capable of Protecting Soft Errors on the C-element Jun Furuta (Kyoto Univ.), Chikara Hamanaka, Kazutoshi Kobayashi (Kyoto Inst. of Tech.), Hidetoshi Onodera (Kyoto Univ.) SDM2010-146 ICD2010-61 |
[more] |
SDM2010-146 ICD2010-61 pp.121-124 |
VLD |
2010-03-10 15:25 |
Okinawa |
|
Generation Mechanism of SEU and MCU Caused by Parasitic Lateral Bipolar Transitstors Chikara Hamanaka (Kyoto Institute of Tech.), Jun Furuta, Hiroaki Makino (Kyoto Univ.), Kazutoshi Kobayashi (Kyoto Institute of Tech.), Hidetoshi Onodera (Kyoto Univ./JST, CREST) VLD2009-103 |
Tolerance for soft-error decreases as integration advances. SEU(Single Event Upset), flipping one bit
and MCU(Multi-Cel... [more] |
VLD2009-103 pp.25-30 |