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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 24  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
VLD, DC, RECONF, ICD, IPSJ-SLDM [detail] 2023-11-15
13:10
Kumamoto Civic Auditorium Sears Home Yume Hall
(Primary: On-site, Secondary: Online)
Frequency Dependence of Soft Error Rates Induced by Alpha-Particle and Heavy Ion
Haruto Sugisaki, Ryuichi Nakajima, Shotaro Sugitani, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2023-33 ICD2023-41 DC2023-40 RECONF2023-36
 [more] VLD2023-33 ICD2023-41 DC2023-40 RECONF2023-36
pp.19-24
VLD, DC, RECONF, ICD, IPSJ-SLDM [detail] 2023-11-15
13:35
Kumamoto Civic Auditorium Sears Home Yume Hall
(Primary: On-site, Secondary: Online)
Data Pattern Dependence of the Total Ionizing Dose Effect in Floating-gate and Charge-trap TLC NAND flash memories
Taiki Ozawa, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2023-34 ICD2023-42 DC2023-41 RECONF2023-37
 [more] VLD2023-34 ICD2023-42 DC2023-41 RECONF2023-37
pp.25-30
VLD, DC, RECONF, ICD, IPSJ-SLDM [detail] 2023-11-15
14:00
Kumamoto Civic Auditorium Sears Home Yume Hall
(Primary: On-site, Secondary: Online)
Evaluation of SEU Sensitivity by Alpha-Particle on PMOS and NMOS Transistors in a 65 nm bulk Process
Keita Yoshida, Ryuichi Nakajima, Shotaro Sugitani, Takafumi Ito, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2023-35 ICD2023-43 DC2023-42 RECONF2023-38
 [more] VLD2023-35 ICD2023-43 DC2023-42 RECONF2023-38
pp.31-36
VLD, DC, RECONF, ICD, IPSJ-SLDM
(Joint) [detail]
2021-12-01
09:20
Online Online Soft Errors on Flip-flops Depending on Circuit and Layout Structures Estimated by TCAD Simulations
Moeka Kotani, Ryuichi Nakajima (KIT), Kazuya Ioki (ROHM), Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2021-17 ICD2021-27 DC2021-23 RECONF2021-25
We compare the soft error tolerance of conventional flip-flops (FFs) and the proposed radiation-hard FF with small area,... [more] VLD2021-17 ICD2021-27 DC2021-23 RECONF2021-25
pp.1-6
VLD, DC, RECONF, ICD, IPSJ-SLDM
(Joint) [detail]
2020-11-18
14:00
Online Online Measurement Results of Total Ionizing Dose Effect on Ring Oscillators Fabricated by a Thin-BOX FDSOI Process for Outer-space Mission
Takashi Yoshida, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2020-30 ICD2020-50 DC2020-50 RECONF2020-49
The Total Ionizing Dose (TID) effect is one of the major concerns for semiconductor devices in outer space, where high a... [more] VLD2020-30 ICD2020-50 DC2020-50 RECONF2020-49
pp.110-114
IPSJ-SLDM, RECONF, VLD, CPSY, IPSJ-ARC [detail] 2020-01-24
15:25
Kanagawa Raiosha, Hiyoshi Campus, Keio University Measuring SER by Neutron Irradiation Between Volatile SRAM-based and Nonvolatile Flash-based FPGAs
Yuya Kawano, Yuto Tsukita, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2019-90 CPSY2019-88 RECONF2019-80
 [more] VLD2019-90 CPSY2019-88 RECONF2019-80
pp.217-222
VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2018-12-07
14:10
Hiroshima Satellite Campus Hiroshima Ultra-long-term Measurement of Aging Degradation on Ring Oscillators by using FPGA and Micro Controller
Hiroki Nakano (KIT), Ryo Kishida (TUS), Jun Furuta, Kazutoshi Kobayashi (KIT) CPM2018-95 ICD2018-56 IE2018-74
 [more] CPM2018-95 ICD2018-56 IE2018-74
pp.31-36
VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2018-12-07
13:45
Hiroshima Satellite Campus Hiroshima A Radiation-hard Low-delay Flip-Flop with Stacking Structure for SOI Process
Mitsunori Ebara, Kodai Yamada, Jun Furuta, Kazutoshi Kobayashi (Kyoto Inst. of Tech.) VLD2018-69 DC2018-55
 [more] VLD2018-69 DC2018-55
pp.203-208
SDM, ICD, ITE-IST [detail] 2018-08-07
11:30
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 Comparison of Sensitivity to Soft Errors of NMOS and PMOS Transistors by Using Three Types of Stacking Latches in an FDSOI process
Kodai Yamada, Jun Furuta, Kazutoshi Kobayashi (KIT) SDM2018-28 ICD2018-15
(To be available after the conference date) [more] SDM2018-28 ICD2018-15
pp.15-20
VLD, HWS
(Joint)
2018-02-28
17:20
Okinawa Okinawa Seinen Kaikan Evaluation of a Radiation-Hardened Method and Soft Error Resilience on Stacked Transistors in 28/65 nm FDSOI Processes
Haruki Maruoka, Kodai Yamada, Mitsunori Ebara, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2017-103
The continuous downscaling of transistors has resulted in an increase of reliability issues for semiconductor chips. In ... [more] VLD2017-103
pp.85-90
VLD, HWS
(Joint)
2018-02-28
17:45
Okinawa Okinawa Seinen Kaikan Evaluation of Soft Error Tolerance on Flip-Flop depending on 65 nm FDSOI Transistor Threshold-Voltage
Mitsunori Ebara, Haruki Maruoka, Kodai Yamada, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2017-104
Moore's Law has been miniaturizing integrated circuits, which
can make a lot of high performance devices such as PCs an... [more]
VLD2017-104
pp.91-96
VLD, DC, CPSY, RECONF, CPM, ICD, IE
(Joint) [detail]
2016-11-28
14:15
Osaka Ritsumeikan University, Osaka Ibaraki Campus Evaluation of Radiation-Hard Circuit Structures in a FDSOI Process by TCAD Simulations
Kodai Yamada, Haruki Maruoka, Shigehiro Umehara, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2016-49 DC2016-43
According to the Moore's law, LSIs are miniaturized and the
reliability of LSIs is degraded. To improve the tolerance ... [more]
VLD2016-49 DC2016-43
pp.31-36
VLD, DC, CPSY, RECONF, CPM, ICD, IE
(Joint) [detail]
2016-11-28
14:40
Osaka Ritsumeikan University, Osaka Ibaraki Campus Evaluation of Soft Error Hardness of FinFET and FDSOI Processes by the PHITS-TCAD Simulation System
Shigehiro Umehara, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2016-50 DC2016-44
The impact of soft errors has been serious with process scaling of integrated circuits. Simulation methods for soft erro... [more] VLD2016-50 DC2016-44
pp.37-41
VLD, DC, CPSY, RECONF, CPM, ICD, IE
(Joint) [detail]
2016-11-28
15:05
Osaka Ritsumeikan University, Osaka Ibaraki Campus Evaluation of Soft Error Rates of FlipFlops on FDSOI by Heavy Ions
Masashi Hifumi, Shigehiro Umehara, Haruki Maruoka, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2016-51 DC2016-45
We evaluate tolerance for soft errors of FFs on a 28/65 nm FDSOI. We fabricated three different layouts of non-redundant... [more] VLD2016-51 DC2016-45
pp.43-48
VLD, DC, CPSY, RECONF, CPM, ICD, IE
(Joint) [detail]
2016-11-28
15:30
Osaka Ritsumeikan University, Osaka Ibaraki Campus Circuit Simulation Method Using Bimodal Defect-Centric Model of Random Telegraph Noise on 40 nm SiON Process
Michitarou Yabuuchi, Azusa Oshima, Takuya Komawaki, Kazutoshi Kobayashi, Ryo Kishida, Jun Furuta (KIT), Pieter Weckx (KUL/IMEC), Ben Kaczer (IMEC), Takashi Matsumoto (Univ. of Tokyo), Hidetoshi Onodera (Kyoto Univ.) VLD2016-52 DC2016-46
We propose a circuit analysis method using the bimodal RTN (random telegraph
noise) model of the defect-centric distri... [more]
VLD2016-52 DC2016-46
pp.49-54
ICD, CPSY 2015-12-18
09:00
Kyoto Kyoto Institute of Technology Evaluation of Soft Error Tolerance of Redundant Flip-Flop in 65nm Bulk and FD-SOI Processes.
Eiji Sonezaki, Kubota Kanto, Masaki Masuda, Shohei Kanda, Jun Furuta, Kazutoshi Kobayashi (KIT) ICD2015-83 CPSY2015-96
According to process down scaling, LSI becomes less reliable for soft errors. To increase the tolerance of FFs for soft ... [more] ICD2015-83 CPSY2015-96
pp.69-74
ICD, CPSY 2015-12-18
12:40
Kyoto Kyoto Institute of Technology [Invited Talk] Evaluation of Radiation-induced Soft Errors on LSI
Jun Furuta (KIT) ICD2015-87 CPSY2015-100
 [more] ICD2015-87 CPSY2015-100
pp.87-92
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2014-11-26
11:35
Oita B-ConPlaza Voltage Dependence of Single Event Transient Pulses on 65nm Silicon-on-Thin-BOX and Bulk Processes
Eiji Sonezaki, Kuiyuan Zhang, Jun Furuta, Kazutoshi Kobayashi (Kyoto Inst. of Tech.) VLD2014-84 DC2014-38
Recently, the growth of power consumption has been serious by process
scaling. The lower voltage is most effective to i... [more]
VLD2014-84 DC2014-38
pp.93-97
VLD 2014-03-05
10:25
Okinawa Okinawa Seinen Kaikan Evaluation of Multiple Cell Upsets Considering Parasitic Bipolar Effects
Jun Furuta (Kyoto Univ.), Kazutoshi Kobayashi (Kyoto Inst. of Tech.), Hidetoshi Onodera (Kyoto Univ.) VLD2013-157
As a result of the process scaling, radiation-induced Multiple Cell
Upsets (MCUs) become major issue for LSI reliabilit... [more]
VLD2013-157
pp.125-130
ICD 2012-12-18
11:45
Tokyo Tokyo Tech Front A 65 nm Low-Power Adaptive-Coupling Redundant Flip-Flop
Masaki Masuda, Kanto Kubota, Ryosuke Yamamoto (KIT), Jun Furuta (Kyoto Univ.), Kazutoshi Kobayashi (KIT), Hidetoshi Onodera (Kyoto Univ.) ICD2012-117
We propose a low-power redundant flip-flop to be operated with high reliability over 1 GHz clock frequency based on the ... [more] ICD2012-117
pp.109-113
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