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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 12 of 12  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM, ITE-IST [detail] 2022-08-09
Online   TCAD Analysis for threshold voltage increase in cryogenic MOSFET operation
Hidehiro Asai, Takumi Inaba, Junichi Hattori, Koichi Fukuda, Hiroshi Oka, Takahiro Mori (AIST) SDM2022-47 ICD2022-15
 [more] SDM2022-47 ICD2022-15
SDM 2021-11-12
Online Online [Invited Talk] Modeling of Temperature Dependent Mobility of GaN HEMTs by Cellular Automaton
Koichi Fukuda, Junichi Hattori, Hidehiro Asai (AIST), Yaita Junya, Junji Kotani (Fujitsu) SDM2021-62
A cellular automaton method is applied to temperature-dependent mobility modeling of GaN HEMT. The method utilizes numer... [more] SDM2021-62
SDM, ICD, ITE-IST [detail] 2021-08-17
Online Online [Invited Talk] Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers
Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori (AIST) SDM2021-30 ICD2021-1
We propose a buried nanomagnet (BNM) realizing high-speed/low-variability silicon spin qubit operation, inspired by buri... [more] SDM2021-30 ICD2021-1
SDM 2019-11-08
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors
Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2019-74
We propose a method to simulate the dynamic behavior of field-effect transistors (FETs) having ferroelectric materials i... [more] SDM2019-74
SDM 2019-01-29
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Multidomain Dynamics of Ferroelectric Polarization in Negative Capacitance State and its Impacts on Performances of Field-Effect Transistors
Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi HattoriI, Hidehiro Asai, Kazuhiko Endo, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2018-81
In this paper, we clarified the multidomain dynamics of ferroelectric polarization in the Negative Capacitance Field-Eff... [more] SDM2018-81
SDM 2018-11-09
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance
Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2018-74
We consider the method to simulate negative-capacitance field-effect transistors (NC FETs) harnessing negative capacitan... [more] SDM2018-74
SDM 2018-01-30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Perspective of Negative Capacitance FinFETs Investigated by Transient TCAD Simulation
Hiroyuki Ota, Shinji Mgita, Tsutomu Ikegami, Junichi Hattori, Hidehiro Asai, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2017-91
 [more] SDM2017-91
SDM 2017-11-09
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] GaN MOS capacitance simulation considering deep traps
Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu (AIST), Tamotsu Hashizume (Hokkaido Univ.) SDM2017-66
Transient mode device simulation is applied to obtain capacitances of GaN MOS capacitors including deep level traps, and... [more] SDM2017-66
SDM 2017-02-06
Tokyo Tokyo Univ. [Invited Talk] Electrical coupling of stacked transistors in monolithic three-dimensional inverters and its dependence on the interlayer dielectric thickness
Junichi Hattori, Koichi Fukuda, Toshifumi Irisawa, Hiroyuki Ota, Tatsuro Maeda (AIST) SDM2016-143
We study the electrical coupling of stacked transistors in monolithic three-dimensional (3D) inverters and investigate i... [more] SDM2016-143
SDM 2017-01-30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology
Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Shintaro Otsuka, Yukinori Morita, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matuskawa (ANational Institute of Advanced Industrial ScieIST) SDM2016-130
We improved the performance of a complementary circuit comprising Si-based tunnel field-effect transistors (TFETs) by us... [more] SDM2016-130
SDM 2017-01-30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Fully Coupled 3-D Device Simulation of Negative Capacitance FinFETs for Sub 10 nm Integration
Hiroyuki Ota, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2016-133
Subthreshold operation of negative capacitance FinFETs (NC-FinFETs) at sub 10 nm gate length are analyzed with a newly d... [more] SDM2016-133
SDM 2016-06-29
Tokyo Campus Innovation Center Tokyo [Invited Lecture] Design of SOI-FETs for Steep Slope Switching using Negative Capacitance in Ferroelectric Gate Insulators
Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2016-34
This paper discusses a design of fully depleted silicon-on-insulator field-effect transistors with ferroelectric gate in... [more] SDM2016-34
 Results 1 - 12 of 12  /   
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