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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2021-11-12
11:30		 Online Online [Invited Talk] Modeling of Temperature Dependent Mobility of GaN HEMTs by Cellular Automaton
Koichi Fukuda, Junichi Hattori, Hidehiro Asai (AIST), Yaita Junya, Junji Kotani (Fujitsu) SDM2021-62		 A cellular automaton method is applied to temperature-dependent mobility modeling of GaN HEMT. The method utilizes numer... [more] SDM2021-62
pp.47-52
MW, ED 2021-01-29
14:25		 Online Online Improved power-added-efficiency in GaN-HEMT on freestanding GaN substrate with reduced interface contamination
Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani, Shiro Ozaki (Fujitsu/Fujitsu Labs.), Yoshitaka Niida (Fujitsu Labs.), Yuichi Minoura (Fujitsu/Fujitsu Labs.), Masato Nishimori (Fujitsu), Naoya Okamoto (Fujitsu/Fujitsu Labs.), Masaru Sato, Norikazu Nakamura (Fujitsu Labs.), Keiji Watanabe (Fujitsu/Fujitsu Labs.) ED2020-34 MW2020-87		  [more] ED2020-34 MW2020-87
pp.34-37
CPM, LQE, ED 2016-12-12
13:00		 Kyoto Kyoto University Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates
Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro, Norikazu Nakamura (Fujitsu Lab.) ED2016-57 CPM2016-90 LQE2016-73		 This paper investigate the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky dio... [more] ED2016-57 CPM2016-90 LQE2016-73
pp.1-4
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