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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 13 of 13  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2021-11-12
11:30
Online Online [Invited Talk] Modeling of Temperature Dependent Mobility of GaN HEMTs by Cellular Automaton
Koichi Fukuda, Junichi Hattori, Hidehiro Asai (AIST), Yaita Junya, Junji Kotani (Fujitsu) SDM2021-62
A cellular automaton method is applied to temperature-dependent mobility modeling of GaN HEMT. The method utilizes numer... [more] SDM2021-62
pp.47-52
MW, ED 2021-01-29
14:25
Online Online Improved power-added-efficiency in GaN-HEMT on freestanding GaN substrate with reduced interface contamination
Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani, Shiro Ozaki (Fujitsu/Fujitsu Labs.), Yoshitaka Niida (Fujitsu Labs.), Yuichi Minoura (Fujitsu/Fujitsu Labs.), Masato Nishimori (Fujitsu), Naoya Okamoto (Fujitsu/Fujitsu Labs.), Masaru Sato, Norikazu Nakamura (Fujitsu Labs.), Keiji Watanabe (Fujitsu/Fujitsu Labs.) ED2020-34 MW2020-87
 [more] ED2020-34 MW2020-87
pp.34-37
CPM, LQE, ED 2016-12-12
13:00
Kyoto Kyoto University Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates
Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro, Norikazu Nakamura (Fujitsu Lab.) ED2016-57 CPM2016-90 LQE2016-73
This paper investigate the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky dio... [more] ED2016-57 CPM2016-90 LQE2016-73
pp.1-4
ED 2008-06-13
13:50
Ishikawa Kanazawa University Deep levels in AlGaN and operation stability of AlGaN/GaN HEMT
Masafumi Tajima, Junji Kotani, Katsuya Sugawara, Tamotsu Hashizume (Hokkaido Univ.) ED2008-24
 [more] ED2008-24
pp.11-16
SDM, R, ED 2007-11-16
14:15
Osaka   High Stability of Drain Current at High Temperatures in Multi-Mesa-Channel AlGaN/GaN HEMT
Takahiro Tamura, Junji Kotani, Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) R2007-49 ED2007-182 SDM2007-217
We fabricated a multi-mesa-channel (MMC) structure by forming a periodic trench just under a gate electrode to improve t... [more] R2007-49 ED2007-182 SDM2007-217
pp.19-22
CPM, ED, LQE 2007-10-11
17:35
Fukui Fukui Univ. UV-response characteristics of insulator/n-GaN MIS structures for sensor application
Chihoko Mizue, Tetsuya Matsuyama, Junji Kotani, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.) ED2007-164 CPM2007-90 LQE2007-65
For UV-detector application, n-GaN Metal-Insulator-Semiconductor(MIS) structure was fabricated using AlOx, layer which w... [more] ED2007-164 CPM2007-90 LQE2007-65
pp.43-46
CPM, ED, LQE 2007-10-12
11:15
Fukui Fukui Univ. Surface control of AlGaN/GaN strcutures
Masafumi Tajima, Junji Kotani, Takahiro Tamura, Tamotsu Hashizume (Hokkaido Univ.) ED2007-170 CPM2007-96 LQE2007-71
We have investigated the change in DC characteristics of AlGaN/GaN HEMTs after the gate-and drain-bias stress at high te... [more] ED2007-170 CPM2007-96 LQE2007-71
pp.73-76
MW, ED 2007-01-19
13:25
Tokyo Kikai-Shinko-Kaikan Bldg. Fabrication and Characterization of Schottky Wrap Gate Controlled AlGaN/GaN Nanowire FETs
Takahiro Tamura, Junji Kotani, Seiya Kasai, Tamotsu Hashizume (Hokkaido Univ., RCIQE)
Schottky wrap gate (WPG) controlled AlGaN/GaN nanowire FETs were fabricated and characterized. The devices with channel ... [more] ED2006-232 MW2006-185
pp.179-182
ED, CPM, LQE 2006-10-05
15:20
Kyoto   Interface control for GaN-based electron devices
Takeshi Kimura, Junji Kotani, Hiroki Kato, Masafumi Tajima, Eri Ogawa, Chihoko Mizue, Tamotsu Hashizume (Hokkaido University)
 [more] ED2006-157 CPM2006-94 LQE2006-61
pp.29-34
ED, CPM, SDM 2006-05-19
13:10
Aichi VBL, Toyohashi University of Technology Leakage current control of AlGaN Schottky interfaces by surface control process using thin Al layer
Junji Kotani, Masamitsu Kaneko, Tamotsu Hashizume (Hokkaido Univ.)
 [more] ED2006-36 CPM2006-23 SDM2006-36
pp.91-94
ED, MW 2006-01-19
10:45
Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of Gate-Lag Phenomena in Unpassivarwd AlGaN/GaN HEMTs
Alberto F. Basile, Junji Kotani, Tamotsu Hashizume (Hokkaido Univ)
 [more] ED2005-200 MW2005-154
pp.7-12
R, ED, SDM 2005-11-25
15:55
Osaka Central Electric Club Investigation of gate leakage current and gate control anomalies in nanometer-scale Schottky gate AlGaN/GaN HFETs
Seiya Kasai, Junji Kotani, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.)
Anomalous gate leakage current and gate control anomaly in AlGaN/GaN HFETs having nanometer-scale Schottky gates were in... [more] R2005-46 ED2005-181 SDM2005-200
pp.47-52
LQE, ED, CPM 2005-10-13
15:40
Shiga Ritsumeikan Univ. Lateral tunneling transport in submicron gates on AlGaN/GaN HFET
Junji Kotani, Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.)
 [more] ED2005-132 CPM2005-119 LQE2005-59
pp.67-70
 Results 1 - 13 of 13  /   
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