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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2015-04-16
16:05		 Nagano   [Invited Lecture] A Low-Power 64Gb MLC NAND-Flash Memory in 15nm CMOS Technology
Mario Sako, Takao Nakajima, Junpei Sato, Kazuyoshi Muraoka, Masaki Fujiu, Fumihiro Kono, Michio Nakagawa, Masami Masuda, Koji Kato, Yuri Terada, Yuki Shimizu, Mitsuaki Honma, Yoshinao Suzuki, Yoshihisa Watanabe (Toshiba), Ryuji Yamashita (SanDisk) ICD2015-6		 A 75mm2 low power 64Gb MLC NAND flash memory capable of 30MB/s program throughput and 533MB/s data transfer rate at 1.8V... [more] ICD2015-6
pp.27-30
ICD 2011-04-18
13:30		 Hyogo Kobe University Takigawa Memorial Hall [Invited Talk] Technology Trend of NAND Flash Memories -- A 151mm2 64Gb 2b/cell NAND Flash Memory in 24nm CMOS Technology --
Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami, Junpei Sato, Teruo Takagiwa, Naoaki Kanagawa, Hitoshi Shiga, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Takeshi Ogawa, Makoto Iwai (Toshiba), Kiyofumi Sakurai (Toshiba Memory Systems), Toru Miwa (SanDisk) ICD2011-4		 A 64Gbit 2bit/cell NAND flash memory capable of 14MB/s programming and 266MB/s data transfer is fabricated in 24nm techn... [more] ICD2011-4
pp.19-26
ICD 2009-04-14
13:50		 Miyagi Daikanso (Matsushima, Miyagi) A 7.8MB/s 64Gb 4bit/Cell NAND Flash Memory in 43nm CMOS
Mitsuaki Honma (Toshiba Corp.), Cuong Trinh (SanDisk Corp.), Noboru Shibata, Takeshi Nakai, Mikio Ogawa, Junpei Sato, Yoshikazu Takeyama, Katsuaki Isobe (Toshiba Corp.), Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei (SanDisk Corp.), Kiyoaki Iwasa (Toshiba Corp.) ICD2009-9		 A 4bit/cell with 43nm CMOS technology NAND flash memory is realized.
64Gb/die is largest capacity.
To achieve 16 leve... [more]		 ICD2009-9
pp.43-46
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