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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 22  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-06-25
15:35
Aichi Nagoya Univ. VBL3F Modification of Al2O3/SiC interface by oxygen radical irradiation
Takuma Doi (Nagoya Univ.), Wakana Takeuchi (AIT), Mitsuo Sakashita (Nagoya Univ.), Noriyuki Taoka (AIST), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2018-23
To realizing power-saving SiC MOSFET, it is needed to reduce the density of interface traps (Dit) between insulator and ... [more] SDM2018-23
pp.33-36
SDM 2017-06-20
16:30
Tokyo Campus Innovation Center Tokyo Characterization of defects in Ge1-xSnx gate stack structure
Yuichi Kaneda, Shinnichi ike, Masayuki Kanematsu, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2017-29
(To be available after the conference date) [more] SDM2017-29
pp.39-42
SDM 2016-06-29
13:50
Tokyo Campus Innovation Center Tokyo Characterization of electrically active defects in epitaxial GeSn layer grown on Ge substrate
Yuichi Kaneda, Masayuki Kanematsu, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2016-39
 [more] SDM2016-39
pp.37-41
SDM, OME 2016-04-08
14:20
Okinawa Okinawa Prefectural Museum & Art Museum [Invited Talk] Growth and characterization of Sn-containing group-IV semiconductor thin film
Yosuke Shimura (Sizuoka Univ.), Wakana Takeuchi, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2016-5 OME2016-5
Strain and energy band structure can be designed in Sn-containing group-IV semiconductor alloys. Moreover, as these new ... [more] SDM2016-5 OME2016-5
pp.23-26
SDM 2015-06-19
11:30
Aichi VBL, Nagoya Univ. [Invited Lecture] Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface
Wakana Takeuchi (Nagoya Univ.), Kensaku Yamamoto (DENSO CORP.), Mitsuo Sakashita (Nagoya Univ.), Takashi Kanemura (DENSO CORP.), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-43
We have investigated the effect of NO-annealing for SiO2/4H-SiC interface properties. The electrical properties of the N... [more] SDM2015-43
pp.27-30
SDM 2015-06-19
14:35
Aichi VBL, Nagoya Univ. Control of electrical conduction property at metal/Ge interface by introducing ultra-high Sn content SnxGe1-x/Ge interlayer
Akihiro Suzuki, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-49
In order to realize high-performance Ge-channel CMOS, it is essential to reduce contact resistance at metal/Ge interface... [more] SDM2015-49
pp.57-61
SDM 2015-06-19
14:55
Aichi VBL, Nagoya Univ. Effect of annealing on defects in Ge1-xSnx epitaxial layers
Takanori Asano, Shigehisa Shibayama, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-50
In order to control the carrier concentration in Ge1-xSnx epitaxial layer, it is important to understand and control def... [more] SDM2015-50
pp.63-68
OME, SDM 2015-04-30
10:00
Okinawa Oh-hama Nobumoto Memorial Hall [Invited Talk] Formation of high Sn content SiSn films and its band structure -- Aiming for direct-band-gap semiconductor --
Masashi Kurosawa, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-9 OME2015-9
This paper reports our recent progress in advanced Sn-assisted low-temperature crystallization methods for Si$_{1-x}$Sn$... [more] SDM2015-9 OME2015-9
pp.35-37
SDM 2014-06-19
16:55
Aichi VBL, Nagoya Univ. [Invited Lecture] Low temperature poly-crystallization of group-IV semiconductor films on insulators -- use of low-melting-point Sn --
Masashi Kurosawa (Nagoya Univ./JSPS), Noriyuki Taoka (Nagoya Univ.), Hiroshi Ikenoue (Kyushu Univ.), Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-60
Low temperature growth of Ge1-xSnx on insulators can provide much wider range of options for device fabrication of 3D-LS... [more] SDM2014-60
pp.91-95
CPM, ED, SDM 2014-05-29
14:20
Aichi   Interaction between Sn and Vacancy-rerated Defects in n-type Germanium Single Crystal
Wakana Takeuchi, Noriyuki Taoka, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) ED2014-41 CPM2014-24 SDM2014-39
Interaction between Sn and vacancy-related defects in an n-type Ge single crystal have been investigated by deep-level t... [more] ED2014-41 CPM2014-24 SDM2014-39
pp.113-118
SDM 2013-06-18
09:00
Tokyo Kikai-Shinko-Kaikan Bldg. Control of Pr-Oxide Crystalline Phase by Regulating Oxidant Partial Pressure and Si Diffusion
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-44
For realization of hexagonal Pr2O3 thin film as higher-k gate dielectrics, we have investigated the effect of H2O partia... [more] SDM2013-44
pp.1-6
SDM 2013-06-18
09:20
Tokyo Kikai-Shinko-Kaikan Bldg. Formation of Ultra Thin GeO2 Film Using Tetraethoxy-Germanium
Teppei Yoshida, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-45
For realizing three-dimensional Ge channel MOSFET, fabrication of good interface property of high-k/Ge structure, and un... [more] SDM2013-45
pp.7-11
SDM 2013-06-18
09:40
Tokyo Kikai-Shinko-Kaikan Bldg. Clarification of oxidation mechanisms in Al2O3/Ge structure and impact of interface reactions on interface properties
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-46
Currently, it is reported that the Ge surface oxidation through the thin Al2O3 layer using oxygen plasma (post plasma ox... [more] SDM2013-46
pp.13-18
SDM, ED
(Workshop)
2012-06-28
10:00
Okinawa Okinawa Seinen-kaikan Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures
Kusumandari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
Low temperature processes such as plasma process are required for realizing Ge metal-oxide-semiconductor field effect tr... [more]
SDM, ED
(Workshop)
2012-06-29
08:45
Okinawa Okinawa Seinen-kaikan [Invited Talk] Potential of GeSn Alloys for Application to Si Nanoelectronics
Shigeaki Zaima, Yosuke Shimura, Marika Nakamura, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka (Nagoya Univ.)
 [more]
SDM 2012-06-21
10:55
Aichi VBL, Nagoya Univ. Clarification of Interfacial Reaction Mechanism in O2 Annealing or O radical Process for Al2O3/Ge Structure
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-48
To realize a high performance Ge MOSFET, it is quite important to achieve simultaneously the low interface state density... [more] SDM2012-48
pp.27-32
SDM 2012-06-21
11:35
Aichi VBL, Nagoya Univ. Effect of Reducing Character of Gate Metals on Pr Valence State in Pr Oxide Film on Ge Substrate
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-50
We have investigated the impact of the gate metal on the chemical bonding state in the metal/Pr-oxide/Ge gate stack stru... [more] SDM2012-50
pp.37-42
ITS, IE, ITE-AIT, ITE-HI, ITE-ME [detail] 2012-02-21
15:00
Hokkaido Hokkaido Univ. User Tracking with Multiple Camera Images for a Remote Collaboration Support System called "t-Room"
Kana Takeuchi, Shigeru Katagiri, Miho Ohsaki (Doshisha Univ.) ITS2011-55 IE2011-131
To increase the utility of a remote collaboration support system called "t-Room", we investigated in this paper a user t... [more] ITS2011-55 IE2011-131
pp.319-324
SDM 2011-07-04
11:40
Aichi VBL, Nagoya Univ. Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure
Kusuman Dari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-57
We have investigated the effect of light induced damages on the electrical properties of the Al2O3/Ge gate stack structu... [more] SDM2011-57
pp.41-46
SDM 2011-07-04
13:20
Aichi VBL, Nagoya Univ. Effect of O2 Annealing for Al2O3/Ge Structure on Interfacial Properties
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-59
For realizing the next generation complementary metal-oxide-semiconductor field-effect-transistors (CMOSFETs), High-k/Ge... [more] SDM2011-59
pp.51-56
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