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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-06-26 11:50 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | Impact of SiH4 exposure to Fe-NDs on silicidation reaction Haruto Saito, Katsunori Makihara, Shun Tanida, Noriyuki Taoka, Seiichi Miyazaki (Nagoya Univ.)  SDM2023-30 |
[more] | SDM2023-30 pp.11-14 |
| SDM | 2022-06-21 14:00 |
Aichi | Nagoya Univ. VBL3F | Impacts of Surface Orientation of Si Substrate on Crystalline Structures and Chemical Composition of Hf-oxide Layers Formed by Post Oxidation Wataru Yasuda, Noriyuki Taoka, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2022-26 |
Orthorhombic (O)Hf-based oxide exhibits ferroelectricity even in a thin film with a thickness of 5-10 nm. However, there... [more] | SDM2022-26 pp.9-12 |
| SDM | 2022-06-21 17:20 |
Aichi | Nagoya Univ. VBL3F | Formation of Ultra-Thin Nickel Silicide Layer with controlled Surface Morphology and Crystalline Phase on SiO2 Keisuke Kimura, Noriyuki Taoka, Shunsuke Nishimura, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya. Univ) SDM2022-31 |
Recently, a device with metal nanosheet (MNS) has been attracted much attention. However, control of surface morphology ... [more] | SDM2022-31 pp.27-30 |
| SDM | 2022-06-21 17:40 |
Aichi | Nagoya Univ. VBL3F | Formation of Al(111) Thin Layer on Si(111) and Control of Surface Si Segregation by Thermal Annealing Taiki Sakai, Keigo Matsushita, Akio Ohta, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2022-32 |
[more] | SDM2022-32 pp.31-34 |
| SDM | 2021-06-22 17:30 |
Online | Online | Formation and Thickness Control of Ultrathin Ge Layer on Al and Ag/(111) Structures by Thermal Anneal Akio Ohta, Keigo Matsushita, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2021-29 |
Ge surface segregation on Al/Ge(111) and Ag/Ge(111) structures by thermal anneal was investigated. Ultrathin Ge formati... [more] | SDM2021-29 pp.27-31 |
| SDM | 2019-06-21 11:40 |
Aichi | Nagoya Univ. VBL3F | Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing Masato Kobayashi, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2019-27 |
We have studied the chemical and crystallographic structures of vacuum evaporated Al/Ge(111) before and after the therma... [more] | SDM2019-27 pp.11-15 |
| SDM | 2018-06-25 15:15 |
Aichi | Nagoya Univ. VBL3F | Chemical Bonding Features and Thermal Stability at SiO2/GaN interfaces Formed by Remote O2 Plasma Enhanced CVD Ryohei Matsuda, Akio Ohta (Nagoya Univ.), Noriyuki Taoka (AIST), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST), Seiichi Miyazaki (Nagoya Univ.) SDM2018-22 |
A ~6.2 nm-thick SiO2 was deposited on n-type GaN(0001) by the remote O2 plasma enhanced CVD, and chemical bonding featur... [more] | SDM2018-22 pp.29-32 |
| SDM | 2018-06-25 16:35 |
Aichi | Nagoya Univ. VBL3F | XPS Study of Silicate Formation and Electrical Dipole at Y2O3/SiO2 Interfaces Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2018-26 |
[more] | SDM2018-26 pp.47-51 |
| LQE, CPM, ED | 2017-12-01 12:30 |
Aichi | Nagoya Inst. tech. | Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures NguyenXuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST GaN OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST GaN OIL), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST GaN OIL), Seiichi Miyazaki (Nagoya Univ.) ED2017-61 CPM2017-104 LQE2017-74 |
Impacts of post-deposition annealing (PDA) on interface properties in a SiO2/GaN structure formed by a remote oxygen pla... [more] | ED2017-61 CPM2017-104 LQE2017-74 pp.61-64 |
| SDM | 2017-06-20 14:35 |
Tokyo | Campus Innovation Center Tokyo | Direct Observation of Chemical Structure and Electrical Dipole at High-k/SiO2 Interface Using by XPS Measurements Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2017-25 |
[more] | SDM2017-25 pp.19-23 |
| SDM | 2017-06-20 14:55 |
Tokyo | Campus Innovation Center Tokyo | Resistive Switching Properties of Si Oxide by Constant Voltage and Constant Current Application Akio Ohta, Yusuke Kato, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2017-26 |
[more] | SDM2017-26 pp.25-29 |
| SDM | 2017-06-20 16:50 |
Tokyo | Campus Innovation Center Tokyo | Formation of Ultrathin Crystalline Structure of Group-IV Elements on Epitaxial Ag(111) Surface Koichi Ito, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2017-30 |
Two dimensional (2D) honeycomb crystals such as silicene and germanene are currently receiving much attention because of... [more] | SDM2017-30 pp.43-48 |
| SDM | 2016-06-29 14:10 |
Tokyo | Campus Innovation Center Tokyo | XPS Study on Potential Change and Electrical Dipole at SiO2/Semiconductor Interface Nobuyuki Fujimura, Akio Ohta, Hiromasa Watanabe, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2016-40 |
An evaluation method for estimating the valence band (VB) top from the vacuum level (VL) for semiconductors and dielectr... [more] | SDM2016-40 pp.43-47 |
| SDM | 2016-06-29 14:45 |
Tokyo | Campus Innovation Center Tokyo | Low Temperature Formation of Thin SiO2 Film by Using Remote Oxygen Plasma Enhanced CVD NguyenXuan Truyen, Nobuyuki Fujimura, Daichi Takeuchi, Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Nagoya Univ.) SDM2016-41 |
SiO2 thin films have been deposited on H-terminated Si surface by remote O2 plasma enhanced CVD (O2-RPCVD) using SiH4 an... [more] | SDM2016-41 pp.49-52 |
| SDM | 2015-06-19 12:40 |
Aichi | VBL, Nagoya Univ. | Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally grown SiO2/4H-SiC Structure Hiromasa Watanabe, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ) SDM2015-44 |
[more] | SDM2015-44 pp.31-35 |
| SDM | 2015-06-19 13:20 |
Aichi | VBL, Nagoya Univ. | Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides Yuusuke Kato, Takashi Arai, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2015-46 |
We have studied the formation of Ti Nanodots (NDs) by remote-H2 plasma treatment and an impact of Ti-NDs embedding into ... [more] | SDM2015-46 pp.41-45 |
| SDM | 2014-06-19 12:05 |
Aichi | VBL, Nagoya Univ. | Study on Resistance-Switching of Si-rich Oxide Films embedding Mn Nanodots Takashi Arai (Nagoya Univ.), Akio Ohta (Nagoya Univ. VBL), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2014-50 |
[more] | SDM2014-50 pp.37-42 |
| SDM | 2014-06-19 15:20 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Local Characterization of Resistive Switching Properties of Si-rich Oxide Thin Films by Using Ni Nanodot Electrode Akio Ohta, Chong Liu, Takashi Arai, Daichi Takeuchi, Hai Zhang, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2014-56 |
[more] | SDM2014-56 pp.69-73 |
| SDM | 2013-06-18 13:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | High Density Formation of CoPt Alloy Nanodots Induced by Remote Hydrogen Plasma and Charging and Magnetizing Characteristics Katsunori Makihara, Ryo Fukuoka, Hai Zhang, Yuuki Kabeya (Nagoya Univ.), Akio Ohta (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2013-53 |
[more] | SDM2013-53 pp.47-50 |
| SDM | 2013-06-18 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes Akio Ohta (Hiroshima Univ.), Motoki Fukusima, Katsunori Makihara (Nagoya Univ.), Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2013-56 |
[more] | SDM2013-56 pp.61-66 |
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