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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SCE 2017-10-04
15:25
Miyagi   Development of Cold Amplifier for COBAND Experiment
Rena Wakasa, Kim Shinhong, Yuji Takeuchi, Takashi Iida, Kenichi Takemasa, Kazuki Nagata, Chisa Asano, Akihiro Kasajima, Hironobu Kanno (Tsukuba Univ.), Coband collaboration SCE2017-22
The Nb/Al-STJs fabricated for the COBAND experiment satisfy the requirements on the leak current and are expected to be ... [more] SCE2017-22
pp.5-8
CPM 2010-10-29
10:25
Nagano   Optimization of GaN film growth condition using pulse-mode hot-mesh CVD
Kazuki Nagata, Souichi Satomoto (Nagaoka Univ. Technol.), Hironori Katagiri, Kazuo Jimbo (Nagaoka Techni. College), Maki Suemitsu, Tetsuo Endoh, Takashi Ito (Tohoku Univ. Technol.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Technol.) CPM2010-102
Hot-mesh CVD with pulse-mode gas supply has been investigated to improve the crystallinity and optical properties of gal... [more] CPM2010-102
pp.55-58
CPM 2009-08-11
11:40
Aomori Hirosaki Univ. Epitaxial growth of gallium nitride on Si by hot-mesh CVD method with intermittent gas supplies.
Takeshi Saitou, Kazuki Nagata (Nagaoka Univ. of Tech.), Maki Suemitsu, Tetsuo Endoh (RIEC Tohoku Univ.), Takashi Ito (CIR Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Masasuke Takata, Tadashi Akahane, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2009-45
Hot-mesh CVD with various gas supply modes for the epitaxial growth of gallium nitride (GaN) on Si was investigated for ... [more] CPM2009-45
pp.61-66
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