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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICSS, IPSJ-SPT | 2023-03-13 12:30 |
Okinawa | Okinawaken Seinenkaikan (Primary: On-site, Secondary: Online) |
Developing a Hand Gesture Recognition System for VR Devices Mei Suzuki, Ryo Iijima, Kazuki Nomoto (Waseda Univ.), Tetsushi Ohki (Shizuoka Univ./AIP), Tatsuya Mori (Waseda Univ./NICT/AIP)  ICSS2022-48 |
We develop a hand gesture recognition scheme using finger movements to recognize the VR user wearing a head-mounted disp... [more] | ICSS2022-48 pp.1-6 |
| ICSS, IPSJ-SPT | 2023-03-13 16:10 |
Okinawa | Okinawaken Seinenkaikan (Primary: On-site, Secondary: Online) |
Evaluation of Copy Protection Technology Using Web Font Kazuki Nomoto (Waseda Univ.), Tatsuya Mori (Waseda Univ./NICT/RIKEN AIP) ICSS2022-61 |
This study proposes and evaluates Fonty, a copy protection technology for text content. First, Fonty encrypts text conte... [more] | ICSS2022-61 pp.79-84 |
| ICSS, IPSJ-SPT | 2021-03-01 09:10 |
Online | Online | On the Privacy Risk of Exposure Notification Framework: Assessment and Countermeasures Kazuki Nomoto (Waseda Univ.), Mitsuaki Akiyama (NTT), Masashi Eto (NICT), Atsuo Inomata (Osaka Univ.), Tatsuya Mori (Waseda Univ./NICT) ICSS2020-34 |
The Exposure Notification Framework uses the Bluetooth Low Energy (BLE) signal generated by a smartphone to determine cl... [more] | ICSS2020-34 pp.49-54 |
| ED | 2012-07-26 15:25 |
Fukui | Fukui University | Effect of ICP Etching on p-type GaN Schottky Contacts Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Kazuki Nomoto (Univ. of Notre Dame), Kenji Shiojima (Univ. of Fukui) ED2012-45 |
Low-Mg-doped p-GaN Schottky contacts were applied to evaluate inductive coupled plasma (ICP) etching damages. The ICP ... [more] | ED2012-45 pp.21-24 |
| ED, MW | 2012-01-11 14:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Photon-recycling GaN p+n Diodes Kazuhiro Mochizuki (Hitachi, Ltd.), Kazuki Nomoto, Yoshitomo Hatakeyama, Hideo Katayose (Hosei Univ.), Tomoyoshi Mishima, Naoki Kaneda, Tadayoshi Tsuchiya (Hitachi Cable, Ltd.), Akihisa Terano, Takashi Ishigaki, Tomonobu Tsuchiya, Ryuta Tsuchiya (Hitachi, Ltd.), Tohru Nakamura (Hosei Univ.) ED2011-125 MW2011-148 |
Photon recycling was used to increase ionization of Mg in GaN p+n diodes by reducing anode radius down to 20 microns. Th... [more] | ED2011-125 MW2011-148 pp.35-40 |
| ED | 2007-06-16 11:00 |
Toyama | Toyama Univ. | Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current Kazuki Nomoto, Taku Tajima (Hosei Univ.), Tomoyoshi Mishima (Hitachi Cable Ltd.), Masataka Satoh, Tohru Nakamura (Hosei Univ.) ED2007-44 |
We were demonstrated the realization of compatibility of extremely low gate leakage current and low source resistance wi... [more] | ED2007-44 pp.71-74 |
| ED, SDM, R | 2006-11-24 15:40 |
Osaka | Central Electric Club | Surface passivation film dependence of 1/f noise characteristic in AlGaN/GaN HEMT Takanori Matsushima, Masahiro Nakajima, Kazuki Nomoto, Masataka Satoh, Tohru Nakamura (Hosei Univ.) |
[more] | R2006-36 ED2006-181 SDM2006-199 pp.27-31 |
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