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Committee Date Time Place Paper Title / Authors Abstract Paper #
EMD, LQE, OPE, CPM, R 2018-08-24
10:15		 Hokkaido Otaru Camber of Commerce & Industry InP template layer thickness dependence of GaInAsP-InP layer grown on directly-bonded InP/Si substrate
Masaki Aikawa, Natsuki Hayasaka, Xu Han, Masaki Matsuura, Periyanayagam Gandhi Kallarasan, Kazuki Uchida, Hirokazu Sugiyama, Hiromu Yada, Kazuhiko Shimomura (Sophia Univ.) R2018-26 EMD2018-29 CPM2018-29 OPE2018-56 LQE2018-45		  [more] R2018-26 EMD2018-29 CPM2018-29 OPE2018-56 LQE2018-45
pp.47-52
LQE, LSJ 2018-05-25
13:25		 Fukui   Comparison of GaInAsP laser diode between hydrophilic bonded InP/Si substrate and InP substrate
Hiromu Yada, Kazuki Uchida, Hirokazu Sugiyama, Periyanayagam Gandhi Kallarasan, Xu Han, Masaki Aikawa, Natsuki Hayasaka, Kazuhiko Shimomura (Sophia Univ.) LQE2018-16		 We have proposed monolithic integration of optical device on hydrophilic bonded InP/Si substrate via MOVPE. We have fabr... [more] LQE2018-16
pp.25-28
OPE, OCS, OFT
(Joint) [detail]		 2018-02-16
13:30		 Okinawa Okinawa Prefectural Museum Study on optical connector attenuation and launching condition for SI-type optical fiber (3)
Mitsuhiro Hijiriyama, Kazuki Uchida, Kenta Suda, Ryo Nagase (CIT) OFT2017-76 OPE2017-184		 It was reported that the equilibrium mode distribution state（EMD）is good to measure optical performance of passive compo... [more] OFT2017-76 OPE2017-184
pp.41-45(OFT), pp.79-83(OPE)
R, EMD, CPM, LQE, OPE 2017-09-01
09:35		 Aomori   Bonding temperature dependence of GaInAsP/InP laser diode grown on directly bonded InP/Si substrate
Masaki Aikawa, Yuya Onuki, Natsuki Hayasaka, Naoki Kamada, Xu Han, Gandhi Kallarasan Periyanayagam, Kazuki Uchida, Hirokazu Sugiyama, Kazuhiko Shimomura (Sophia Univ.) R2017-32 EMD2017-26 CPM2017-47 OPE2017-56 LQE2017-29		  [more] R2017-32 EMD2017-26 CPM2017-47 OPE2017-56 LQE2017-29
pp.41-44
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