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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2020-01-28 15:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Future of Non-Volatile Memory - From Storage to Computing Kazunari Ishimaru (kioxia) SDM2019-87 |
More than thirty years passed since the first NAND flash memory was presented at the IEDM. The NAND flash memory expande... [more] |
SDM2019-87 p.19 |
SDM, VLD |
2006-09-26 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Improvement of Drive Current in Bulk-FinFET using Full 3D Process/Device Simulations Takahisa Kanemura, Takashi Izumida, Nobutoshi Aoki, Masaki Kondo, Sanae Ito, Toshiyuki Enda, Kimitoshi Okano, Hirohisa Kawasaki, Atsushi Yagishita, Akio Kaneko, Satoshi Inaba, Mitsutoshi Nakamura, Kazunari Ishimaru, Kyoichi Suguro, Kazuhiro Eguchi (Toshiba Corp.) |
We discussed the optimization of structure of bulk-FinFETs and ion implantations by using 3-D process and device simulat... [more] |
VLD2006-43 SDM2006-164 pp.25-29 |
ICD, SDM |
2006-08-18 11:40 |
Hokkaido |
Hokkaido University |
Embedded Bulk FinFET SRAM Cell Technology with Planar FET Peripheral Circuit for hp32 nm node and beyond Hirohisa Kawasaki (TAEC), Satoshi Inaba, Kimitoshi Okano, Akio Kaneko (Toshiba Semicon.), Atsushi Yagishita (TAEC), Takashi Izumida, Takahisa Kanemura, Takahiko Sasaki, Nobuaki Otsuka, Nobutoshi Aoki, Kyoichi Suguro, Kazuhiro Eguchi, Yoshitaka Tsunashima (Toshiba Semicon.), Kazunari Ishimaru (TAEC), Hidemi Ishiuchi (Toshiba Semicon.) |
[more] |
SDM2006-147 ICD2006-101 pp.127-132 |
ICD, SDM |
2005-08-19 10:45 |
Hokkaido |
HAKODATE KOKUSAI HOTEL |
HfSiON Gate Dielectrics Design for Mixed Signal CMOS Kenji Kojima, Ryosuke Iijima, Tatsuya Ohguro, Takeshi Watanabe, Mariko Takayanagi, Hisayo S. Momose, Kazunari Ishimaru, Hidemi Ishiuchi (TOSHIBA) |
(Advance abstract in Japanese is available) [more] |
SDM2005-147 ICD2005-86 pp.25-30 |
ICD, SDM |
2005-08-19 14:40 |
Hokkaido |
HAKODATE KOKUSAI HOTEL |
Robust Device Design in FinFET SRAM for hp22nm Technology Node Kimitoshi Okano, Tatsuya Ishida, Takahiko Sasaki, Takashi Izumida, Masaki Kondo, Makoto Fujiwara, Nobutoshi Aoki, Satoshi Inaba, Nobuaki Otsuka, Kazunari Ishimaru, Hidemi Ishiuchi (Toshiba) |
Feasibility of FinFET SRAM operation at hp22nm technology node has been studied by device and circuit simulation from th... [more] |
SDM2005-154 ICD2005-93 pp.67-72 |
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