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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| SDM |
2013-11-15
15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Reconsideration of Effective MOSFET Channel Length
Kazuo Terada, Kazuhiko Sanai, Katsuhiro Tsuji (Hiroshima City Univ.)  SDM2013-115 |
The effective MOSFET channel length (LEFF) as a function of gate voltage is extracted by channel resistance method. It ... [more] |
SDM2013-115
pp.87-91 |
| SDM, ICD |
2011-08-26
09:00 |
Toyama |
Toyama kenminkaikan |
Evaluation of Variability in High-k/Metal-Gate MOSFET using Takeuchi Plot
Tomoko Mizutani, Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2011-83 ICD2011-51 |
[more] |
SDM2011-83 ICD2011-51
pp.65-68 |
| SDM, ICD |
2011-08-26
09:25 |
Toyama |
Toyama kenminkaikan |
Statistical Analysis of DIBL and Current-Onset Voltage (COV) Variability in Scaled MOSFETs
Anil Kumar, Tomoko Mizutani (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2011-84 ICD2011-52 |
[more] |
SDM2011-84 ICD2011-52
pp.69-73 |
| ICD, SDM |
2010-08-27
16:00 |
Hokkaido |
Sapporo Center for Gender Equality |
Random Drain Current Variation Caused by "Current-Onset Voltage" Variability in Scaled MOSFETs
Tomoko Mizutani (Univ. of Tokyo), Takaaki Tsunomura (MIRAI-Selete), Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2010-150 ICD2010-65 |
It is revealed that drain current variability is fluctuated by “current-onset voltage” as well as threshold voltage VTH ... [more] |
SDM2010-150 ICD2010-65
pp.143-148 |
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