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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2007-04-13
09:40
Oita   [Invited Talk] A 65 nm Embedded SRAM with Wafer Level Burn-In Mode, Leak-Bit Redundancy and E-trim Fuse for Known Good Die
Shigeki Ohbayashi, Makoto Yabuuchi, Kazushi Kono (Renesas Technology), Yuji Oda (Shikino High-Tech), Susumu Imaoka (Renesas Design), Keiichi Usui (Daioh Electric), Toshiaki Yonezu, Takeshi Iwamoto, Koji Nii, Yasumasa Tsukamoto, Masashi Arakawa, Takahiro Uchida, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara (Renesas Technology) ICD2007-11
We propose a Wafer Level Burn-In (WLBI) mode, a leak-bit redundancy and a small, highly reliable Cu E-trim fuse repair s... [more] ICD2007-11
pp.59-64
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