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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2009-11-20
09:55		 Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) High rate growth of GaN using 4 inch x 11 multi wafer MOVPE reactor (UR25K)
Yoshiki Yano, Kazutada Ikenaga, Hiroki Tokunaga (Taiyo Nippon Sanso), Jun Yamamoto (TN EMC), Toshiya Tabuchi (Taiyo Nippon Sanso), Kousuke Uchiyama (TN EMC), Akira Yamaguchi, Yasushi Fukuda, Akinori Ubukata (Taiyo Nippon Sanso), Yasuhiro Harada, Yuzaburo Ban, Koh Matsumoto (TN EMC), Toshiaki Yamazaki (Taiyo Nippon Sanso) ED2009-148 CPM2009-122 LQE2009-127		 We have developed a multiwafer MOVPE reactor with a capacity of eleven 4 inch wafers(UR25K). In order to shorten the gro... [more] ED2009-148 CPM2009-122 LQE2009-127
pp.95-98
LQE, ED, CPM 2005-10-14
16:10		 Shiga Ritsumeikan Univ. PL characterization of In surface segregation in InGaN/GaN Multiple Quantum Well Structures using MOCVD reactor (2” ×6 wafers)
Kazutada Ikenaga, Akinori Ubukata, Akira Yamaguchi, Nakao Akutsu, Kinji Fujii, Koh Matsumoto (TAIYO NIPPON SANSO) 		 [more] ED2005-156 CPM2005-143 LQE2005-83
pp.81-84
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