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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
HIP 2020-10-08
17:20
Online Online The relationship between oscillation emphasis illusion and a time frequency characteristics in human vision
Koki Otaka (NIT, Hiroshima College), Kazuya Ogawa, Atsushi Osa (Yamaguchi Univ.) HIP2020-38
For the sight of the human vision, a gap may occur at the physical position of the object and the position perceiving it... [more] HIP2020-38
pp.33-35
EMM 2020-03-06
10:40
Okinawa
(Cancelled but technical report was issued)
The relationship between oscillation emphasis illusion and a time frequency characteristics in human vision
Koki Otaka (NIT Hiroshima Col.), Kazuya Ogawa, Atsushi Osa (Yamaguchi Univ.) EMM2019-127
For the sight of the human vision, a gap may occur at the physical position of the object and the position perceiving it... [more] EMM2019-127
pp.133-136
MW, EMCJ, EST, IEE-EMC [detail] 2017-10-20
15:40
Akita Yupopo An effective device for measuring microwave absorption of minute specimen
Ryota Kirikane, Hatsuhiro Kato, Kazuya Ogawa (Univ. of Yamanashi) EMCJ2017-55 MW2017-107 EST2017-70
To selectively take off cancer cells a possible microwave therapy is studied with an adsorbent that is medicinally gathe... [more] EMCJ2017-55 MW2017-107 EST2017-70
pp.157-160
SDM, ED 2008-07-11
15:35
Hokkaido Kaderu2・7 Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition
Masashi Kato, Hidenori Ono, Kazuya Ogawa, Masaya Ichimura (Nagoya Inst. of Tech.) ED2008-108 SDM2008-127
4H-SiC Schottky diodes are promising devices for the application of high-power and high-frequency rectifiers.However it ... [more] ED2008-108 SDM2008-127
pp.357-361
CPM, ED, SDM 2008-05-16
14:40
Aichi Nagoya Institute of Technology Observation Method of Variation in Barrier Height in 4H-SiC Schottky Diodes Using the Electrochemical Deposition
Hidenori Ono, Kazuya Ogawa, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2008-19 CPM2008-27 SDM2008-39
4H-SiC Schottky Diodes are promising for application of high-power and high-frequency rectifiers.However it is reported... [more] ED2008-19 CPM2008-27 SDM2008-39
pp.89-94
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