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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
HIP |
2020-10-08 17:20 |
Online |
Online |
The relationship between oscillation emphasis illusion and a time frequency characteristics in human vision Koki Otaka (NIT, Hiroshima College), Kazuya Ogawa, Atsushi Osa (Yamaguchi Univ.) HIP2020-38 |
For the sight of the human vision, a gap may occur at the physical position of the object and the position perceiving it... [more] |
HIP2020-38 pp.33-35 |
EMM |
2020-03-06 10:40 |
Okinawa |
(Cancelled but technical report was issued) |
The relationship between oscillation emphasis illusion and a time frequency characteristics in human vision Koki Otaka (NIT Hiroshima Col.), Kazuya Ogawa, Atsushi Osa (Yamaguchi Univ.) EMM2019-127 |
For the sight of the human vision, a gap may occur at the physical position of the object and the position perceiving it... [more] |
EMM2019-127 pp.133-136 |
MW, EMCJ, EST, IEE-EMC [detail] |
2017-10-20 15:40 |
Akita |
Yupopo |
An effective device for measuring microwave absorption of minute specimen Ryota Kirikane, Hatsuhiro Kato, Kazuya Ogawa (Univ. of Yamanashi) EMCJ2017-55 MW2017-107 EST2017-70 |
To selectively take off cancer cells a possible microwave therapy is studied with an adsorbent that is medicinally gathe... [more] |
EMCJ2017-55 MW2017-107 EST2017-70 pp.157-160 |
SDM, ED |
2008-07-11 15:35 |
Hokkaido |
Kaderu2・7 |
Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition Masashi Kato, Hidenori Ono, Kazuya Ogawa, Masaya Ichimura (Nagoya Inst. of Tech.) ED2008-108 SDM2008-127 |
4H-SiC Schottky diodes are promising devices for the application of high-power and high-frequency rectifiers.However it ... [more] |
ED2008-108 SDM2008-127 pp.357-361 |
CPM, ED, SDM |
2008-05-16 14:40 |
Aichi |
Nagoya Institute of Technology |
Observation Method of Variation in Barrier Height in 4H-SiC Schottky Diodes Using the Electrochemical Deposition Hidenori Ono, Kazuya Ogawa, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2008-19 CPM2008-27 SDM2008-39 |
4H-SiC Schottky Diodes are promising for application of high-power and high-frequency rectifiers.However it is reported... [more] |
ED2008-19 CPM2008-27 SDM2008-39 pp.89-94 |
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