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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2023-01-27
Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)
Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT
Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech) ED2022-93 MW2022-152
 [more] ED2022-93 MW2022-152
SDM 2022-11-11
Online Online [Invited Talk] Evaluation and Modeling of Inversion Layer Mobility in Si-face 4H-SiC MOSFETs with Nitrided Gate Oxide
Munetaka Noguchi, Hiroshi Watanabe (Mitsubishi Electric Corp.), Koji Kita (Tokyo Univ.), Kazuyasu Nishikawa (Mitsubishi Electric Corp.) SDM2022-75
In this study, the inversion layer mobility of the Si-face 4H-SiC MOSFET with nitrided gate oxide is examined under a wi... [more] SDM2022-75
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