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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2020-02-07
09:35
Tokyo Tokyo University-Hongo [Invited Talk] Impact of Homogeneously Dispersed Al Nanoclusters by Si-monolayer Insertion into Hf0.5Zr0.5O2 Film on FeFET Memory Array with Tight Threshold Voltage Distribution
Tadashi Yamaguchi, Keiichi Maekawa, Takahiro Ohara, Atsushi Amo, Eiji Tsukuda, Kenichiro Sonoda, Hiroshi Yanagita, Masao Inoue, Masazumi Matsuura, Tomohiro Yamashita (Renesas) SDM2019-89
 [more] SDM2019-89
pp.5-8
SDM 2020-01-28
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Impact of Homogeneously Dispersed Al Nanoclusters by Si-monolayer Insertion into Hf0.5Zr0.5O2 Film on FeFET Memory Array with Tight Threshold Voltage Distribution
Keiichi Maekawa (renesas) SDM2019-83
 [more] SDM2019-83
pp.5-8
SDM 2016-10-26
15:30
Miyagi Niche, Tohoku Univ. [Invited Talk] Back-Bias Control Technique for Suppression of Die-to-Die Delay Variability of SOTB CMOS Circuits at Ultralow-Voltage (0.4 V) Operation
Hideki Makiyama, Yoshiki Yamamoto, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Hiroki Shinkawata, Shiro Kamohara, Yasuo Yamaguchi (Renesas Electronics Corp.), Nobuyuki Sugii (Hitach), Koichiro Ishibashi (The Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (The Univ. of Tokyo) SDM2016-71
Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] SDM2016-71
pp.15-20
SDM 2016-10-26
16:10
Miyagi Niche, Tohoku Univ. [Invited Talk] Ultralow-Voltage Operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM Down to 0.37 V Utilizing Adaptive Back Bias
Yoshiki Yamamoto, Hideki Makiyama, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Shinkawata Hiroki, Shiro Kamohara, Yasuo Yamaguchi (Renesas), Nobuyuki Sugii (Hitachi), Tomoko Mizutani, Toshiro Hiramoro (UT) SDM2016-72
We demonstrated record 0.37V minimum operation voltage (VMIN) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks... [more] SDM2016-72
pp.21-25
ICD 2015-04-16
13:50
Nagano   [Invited Lecture] 40 nm Dual-port and Two-port SRAMs for Automotive MCU Applications under the Wide Temperature Range of -40 to 170℃ with Test Screening Against Write Disturb Issues
Yoshisato Yokoyama, Yuichiro Ishii, Tatsuya Fukuda, Yoshiki Tsujihashi, Atsushi Miyanishi (Renesas Electronics), Shinobu Asayama, Keiichi Maekawa, Kazutoshi Shiba (Renesas Semiconductor Manufacturing Corporation), Koji Nii (Renesas Electronics) ICD2015-3
(To be available after the conference date) [more] ICD2015-3
pp.9-14
 Results 1 - 5 of 5  /   
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