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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, SDM 2023-05-19
Aichi Nagoya Institute of Technology
(Primary: On-site, Secondary: Online)
Effect of Ge Epitaxial Buffer Layer on Solid Phase Growth of Ge on Si
Satoki Furuya, Mikiya Kuzutani, Jose A. Piedra-Lorenzana, Takeshi Hizawa, Keisuke Yamane, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2023-6 CPM2023-6 SDM2023-23
 [more] ED2023-6 CPM2023-6 SDM2023-23
CPM, ED, SDM 2023-05-19
Aichi Nagoya Institute of Technology
(Primary: On-site, Secondary: Online)
AlN film by reactive sputtering as a stressor for Ge photonic devices on Si
Jose A. Piedra-Lorenzana, Shohei Kaneko, Takaaki Fukushima, Keisuke Yamane (Toyohashi Univ. Tec.), Junichi Fujikata (Tokushima Univ.), Yasuhiko Ishikawa (Toyohashi Univ. Tec.) ED2023-9 CPM2023-9 SDM2023-26
AlN deposited by reactive sputtering is studied as an external stressor for controlling the operating wavelength of near... [more] ED2023-9 CPM2023-9 SDM2023-26
SDM, ED, CPM 2019-05-17
Shizuoka Shizuoka Univ. (Hamamatsu) Study of Fabrication Process for Nitride-based Semiconductor Integrated Circuits -- Threshold voltage control by Si-ion implantation --
Hiroshi Okada, Taichi Yokoyama, Kiyomasa Miwa, Keisuke Yamane, Akihiro Wakahara, Hiroto Sekiguchi (Toyohashi Tech.) ED2019-26 CPM2019-17 SDM2019-24
 [more] ED2019-26 CPM2019-17 SDM2019-24
CPM, LQE, ED 2016-12-13
Kyoto Kyoto University Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip
Kazuaki Tsuchiyama, Shu Utsuhomiya, Shota Nakagawa, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) ED2016-73 CPM2016-106 LQE2016-89
A Si/SiO2/GaN-LED structure was fabricated by surface activated bonding method, and a GaN-µLED driver circuit consi... [more] ED2016-73 CPM2016-106 LQE2016-89
CPM, ED, SDM 2016-05-19
Shizuoka Shizuoka University, Hamamatsu campus (Joint Research Lab.) Investigation of interface formation process between insulator and nitride-semiconductor for insulated gate transistors
Yutaka Kondo, Masatoshi Shinohara, Tomoki Hikosaka, Makoto Baba (Toyohashi Univ. Technol.), Hiroshi Okada (EIIRIS, Toyohashi Univ. Technol.), Hiroto Sekiguchi, Keisuke Yamane, Akihiro Wakahara (Toyohashi Univ. Technol.) ED2016-17 CPM2016-5 SDM2016-22
 [more] ED2016-17 CPM2016-5 SDM2016-22
CPM, ED, SDM 2016-05-20
Shizuoka Shizuoka University, Hamamatsu campus (Joint Research Lab.) Interface control for III-V/Si hetero-epitaxy
Keisuke Yamane, Hiroto Sekiguchi (Toyohashi Tech.), Hiroshi Okada (EIIRIS), Akihiro Wakahara (Toyohashi Tech.) ED2016-26 CPM2016-14 SDM2016-31
This paper focuses a formation process of the first atomic layer on Si substrates for GaP/Si heteroepitaxy. It is clarif... [more] ED2016-26 CPM2016-14 SDM2016-31
ED, CPM, SDM 2015-05-28
Aichi Venture Business Laboratory, Toyohashi University of Technology Control of N composition of GaAsN alloy grown by surface nitridation
Noriyuki Urakami, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) ED2015-20 CPM2015-5 SDM2015-22
We researched growth conditions effect for N composition and luminescence property on dilute nitride GaAsN alloy grown b... [more] ED2015-20 CPM2015-5 SDM2015-22
CPM, SDM, ED 2011-05-19
Aichi Nagoya Univ. (VBL) Molecular beam epitaxy growth of AlGaPN alloys for optical confinement structure on Si substrate
Keisuke Kumagai, Kohei Shoji, Tsuyoshi Kawai, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ.Tech.) ED2011-10 CPM2011-17 SDM2011-23
An AlP-based dilute nitride is one of the candidates for the cladding layer of laser structure in a Si-based optoelectro... [more] ED2011-10 CPM2011-17 SDM2011-23
SDM, CPM, ED 2010-05-14
Shizuoka Shizuoka University (Hamamatsu Campus) Fabrication of 1-bit counter circuit with LED indicator using Si/III-V-N/Si structure
Seizo Tanaka, Kenta Noguchi, Keisuke Yamane, Yuki Deguchi, Yuzo Furukawa, Hiroshi Okada, Akihiro Wakahara, Hiroo Yonezu (Toyohashi Univ. of Tech.) ED2010-32 CPM2010-22 SDM2010-32
We fabricated of 1-bit counter circuit with light-emitting diode (LED) indicators using semiconductor process technology... [more] ED2010-32 CPM2010-22 SDM2010-32
 Results 1 - 9 of 9  /   
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