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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2019-11-21
13:55		 Shizuoka Shizuoka Univ. (Hamamatsu) Estimation of device characteristics of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD
Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2019-41 CPM2019-60 LQE2019-84		 SiO2 has a relatively large band gap of approximately 9 eV. Therefore, by fabricating SiO2/Al2O3 double insulators, GaN-... [more] ED2019-41 CPM2019-60 LQE2019-84
pp.37-40
ED, LQE, CPM 2018-11-30
09:00		 Aichi Nagoya Inst. tech. A 2.5-kV-breakdown-voltage AlGaN-channel HFET with a strain-controlled AlGaInN barrier layer
Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. of Tech.) ED2018-41 CPM2018-75 LQE2018-95		 Novel AlGaN-channel heterostructures employing quaternary AlGaInN barriers were grown by metalorganic chemical vapor dep... [more] ED2018-41 CPM2018-75 LQE2018-95
pp.41-44
ED, LQE, CPM 2018-11-30
09:25		 Aichi Nagoya Inst. tech. Effects of annealing ambient on electrical properties of ALD-Al2O3/AlGaN/GaN MIS-HEMTs
Keita Furuoka, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2018-42 CPM2018-76 LQE2018-96		 We conducted post-deposition annealing (PDA) and post-metalization annealing in various annealing atmosphere and evaluat... [more] ED2018-42 CPM2018-76 LQE2018-96
pp.45-48
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