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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2016-07-23
15:05		 Tokyo Tokyo Metropolitan Univ. Minami-Osawa Campus, International House Effects of post-deposition anneal on SiO2 layer on Ga2O3
Keita Konishi, Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2016-29		 Ga2O3 is an attractive new oxide semiconductor for next-generation power devices due to its extremely large bandgap of 4... [more] ED2016-29
pp.11-15
ED 2016-01-20
11:20		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] State-of-the-art technology of gallium oxide power devices
Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura) ED2015-114		 Gallium oxide (Ga{$_{2}$}O{$_{3}$}) is one of oxide semiconductors and has excellent material properties for power devic... [more] ED2015-114
pp.13-18
ED 2015-07-24
15:10		 Ishikawa IT Business Plaza Musashi 5F Band alignment at SiO2/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy
Keita Konishi, Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi (MURA Corp.), Masataka Higashiwaki (NICT) ED2015-40		  [more] ED2015-40
pp.21-24
SDM, ED 2007-02-02
10:45		 Hokkaido   Transport property of nanographite patterned on Silicon dioxide
Keita Konishi, Takashi Matsuda, Youji Kan (Hokkaido Univ.) 		Graphene has been a new material of interest with two-dimensional structure. We measured the effect of gate electric fie... [more] ED2006-251 SDM2006-239
pp.63-66
 Results 1 - 4 of 4  /   
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