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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2008-06-13
13:25		 Ishikawa Kanazawa University I-V and C-V characteristics of p-GaN schottky contacts -- Carrier concentration and metal work function dependences --
Yoshihiro Fukushima, Keita Ogisu, Masaaki Kuzuhara, Kenji Shiojima (Fukui Univ.) ED2008-23		 Carrier concentration (P) and metal work function dependences of Schottky barrier height (qB) were measured from... [more] ED2008-23
pp.5-10
ED 2008-06-13
14:40		 Ishikawa Kanazawa University Reliability evaluation of MOCVD-grown InP/InGaAs HBTs
Keita Ogisu, Yoshihiro Fukushima, Kenji Shiojima (Fukui Univ.), Gkou Araki, Hideo Yokohama (NTT-AT) ED2008-26		 We examined to reduce hydrogen atom concentration in a p-type InGaAs base layer by using ethyl based precursors （TMI,TMG... [more] ED2008-26
pp.23-28
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