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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2011-01-14
11:25		 Tokyo Kikai-Shinko-Kaikan Bldg. Developing GaN HEMTs for Ka-Band with 20W
Keiichi Matsushita, Hiroyuki Sakurai, Yasushi Kashiwabara, Kazutoshi Masuda, Ken Onodera, Hisao Kawasaki, Kazutaka Takagi, Yoshiharu Takada, Kunio Tsuda (Toshiba) ED2010-186 MW2010-146		 (To be available after the conference date) [more] ED2010-186 MW2010-146
pp.61-64
CPM, ED, LQE 2007-10-12
12:05		 Fukui Fukui Univ. Ku-band AlGaN/GaN HEMTs with 50W Output Power
Yasushi Kashiwabara, Shigenori Takagi, Kazutoshi Masuda, Keiichi Matsushita, Ken Onodera, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba) ED2007-172 CPM2007-98 LQE2007-73		 AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for Ku-band applications. The operating voltage and... [more] ED2007-172 CPM2007-98 LQE2007-73
pp.81-84
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