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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| PRMU, BioX |
2016-03-24
11:00 |
Tokyo |
|
Multi-User Localization Based on Trajectory Group Optimization Considering Characteristics of Individuals and Devices
Kenji Imanishi (Osaka Univ.), Yoshimichi Ito (OECU), Noboru Babaguchi (Osaka Univ.)  BioX2015-44 PRMU2015-167 |
Recently, a method for multi-user localization in indoor environment using textit{trajectory group optimization} has bee... [more] |
BioX2015-44 PRMU2015-167
pp.19-24 |
| LQE, ED, CPM |
2011-11-17
16:45 |
Kyoto |
Katsura Hall，Kyoto Univ. |
Si Ion Implantated GaN-HEMT for Millimeter-Wave Applications
Masato Nishimori, Kozo Makiyama, Toshihiro Ohki, Atsushi Yamada, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Keiji Watanabe (Fujitsu Lab.) ED2011-85 CPM2011-134 LQE2011-108 |
[more] |
ED2011-85 CPM2011-134 LQE2011-108
pp.61-65 |
| CPM, LQE, ED |
2010-11-11
16:50 |
Osaka |
|
High-Power GaN-HEMT for Millimeter-Wave Amplifier
Kozo Makiyama, Toshihiro Ohki, Naoya Okamoto, Masahito Kanamura, Satoshi Masuda, Yasuhiro Nakasha, Kazukiyo Joshin, Kenji Imanishi (Fujitsu, Fujitsu Labs.), Naoki Hara, Shiro Ozaki, Norikazu Nakamura (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu, Fujitsu Labs.) ED2010-153 CPM2010-119 LQE2010-109 |
[more] |
ED2010-153 CPM2010-119 LQE2010-109
pp.51-54 |
| MW |
2009-09-25
15:15 |
Tokyo |
Univ. of Electro-Communications |
C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE
Hisao Shigematsu, Yusuke Inoue, Akihiko Akasegawa, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab.) MW2009-86 |
In this paper, we report an X-band power amplifier with over 100-W output power using 0.25-μm GaN-HEMTs and a C-band pow... [more] |
MW2009-86
pp.73-78 |
| ED |
2009-06-12
11:25 |
Tokyo |
|
Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT
Atsushi Yamada, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu and Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu and Fujitsu Labs.) ED2009-48 |
In this paper, GaN channel and AlGaN buffer layer structure in the GaN-HEMT was optimized to achieve a good balance betw... [more] |
ED2009-48
pp.63-67 |
| MW, ED |
2009-01-16
09:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
C-band GaN-HEMT Power Amplifier with Over 300-W Output Power and Over 50-% Efficiency
Hisao Shigematsu, Yusuke Inoue, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab. Ltd.,) ED2008-218 MW2008-183 |
[more] |
ED2008-218 MW2008-183
pp.113-118 |
| MW, ED |
2009-01-16
10:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
High-Power GaN-HEMT with High Three-Terminal Breakdown Voltage for W-band Applications
Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu Ltd/Fujitsu Lab. Ltd.), Naoki Hara (Fujitsu Lab. Ltd.), Toshihide Kikkawa (Fujitsu Ltd/Fujitsu Lab. Ltd.) ED2008-221 MW2008-186 |
We reported on a technology to improve the three-terminal breakdown voltage of a GaN high electron mobility transistor (... [more] |
ED2008-221 MW2008-186
pp.129-133 |
| LQE, ED, CPM |
2008-11-28
13:55 |
Aichi |
Nagoya Institute of Technology |
An Over 100 W AlGaN/GaN Enhancement-Mode HEMT Power Amplifier
Toshihiro Ohki, Toshihide Kikkawa, Masahito Kanamura, Kenji Imanishi, Kozo Makiyama, Naoya Okamoto, Kazukiyo Joshin, Naoki Hara (Fujitsu, Fujitsu Labs.) ED2008-178 CPM2008-127 LQE2008-122 |
[more] |
ED2008-178 CPM2008-127 LQE2008-122
pp.131-136 |
| SDM, R, ED |
2007-11-16
15:20 |
Osaka |
|
Degradation-Mode Analysis for Highly Reliable GaN-HEMT
Yusuke Inoue, Satoshi Masuda, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Hisao Shigematsu, Kazukiyo Joshin (Fujitsu Labs. Ltd.) R2007-51 ED2007-184 SDM2007-219 |
[more] |
R2007-51 ED2007-184 SDM2007-219
pp.27-31 |
| MW, ED |
2007-01-19
15:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Current collapse of inslated-gate GaN-HEMT
Masahito Kanamura, Toshihiro Ohki, Kenji Imanishi, Kozo Makiyama, Naoya Okamoto (Fujitsu, Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa, Kazukiyo Joshin (Fujitsu, Fujitsu Labs.) |
[more] |
ED2006-236 MW2006-189
pp.199-203 |
| MW, ED |
2007-01-19
16:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
GaN-HEMT with high breakdown voltage and high fmax for millimeter-wave application
Kozo Makiyama, Toshihiro Ohki, Kenji Imanishi, Masahito Kanamura (Fujitsu, Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu, Fujitsu Labs.) |
[more] |
ED2006-239 MW2006-192
pp.213-217 |
| ED, MW |
2006-01-19
15:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Highly Uniform GaN-HEMT on 3-inch Conductive SiC Substrate for Wireless Basestation Applications
Toshihide Kikkawa, Kenji Imanishi, Masahito Kanamura, Kazukiyo Joshin (Fujitsu Labs.) |
[more] |
ED2005-207 MW2005-161
pp.45-49 |
| ED, MW |
2006-01-19
15:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
High Power AlGaN/GaN MIS-HEMT
Masahito Kanamura, Toshihide Kikkawa, Taisuke Iwai, Kenji Imanishi, Tokuro Kubo, Kazukiyo Joshin (Fujitsu Labs. Ltd.) |
[more] |
ED2005-208 MW2005-162
pp.51-55 |
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