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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MW |
2014-01-17 13:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Low-Power, Linear Driver Module for InP MZM Hitoshi Wakita, Munehiko Nagatani, Miwa Mutoh, Satoshi Tsunashima, Hiroyuki Fukuyama, Hideyuki Nosaka, Norihide Kashio, Minoru Ida, Kenji Kurishima (NTT) ED2013-130 MW2013-195 |
In this paper, the characteristics of InP MZM driver module are presented. The linear driver IC that was implemented in... [more] |
ED2013-130 MW2013-195 pp.115-120 |
ED, MW |
2012-01-12 10:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida (NTT) ED2011-130 MW2011-153 |
Because of the significant increase of data traffic, there is now a strong demand for reducing the power consumptions of... [more] |
ED2011-130 MW2011-153 pp.63-68 |
ED, MW |
2012-01-12 11:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
A 60-GS/s Digital-to-Analog Converter using 0.5-um InP HBTs for Optical Communication Systems Munehiko Nagatani, Hideyuki Nosaka, Kimikazu Sano, Koichi Murata, Kenji Kurishima, Minoru Ida (NTT) ED2011-131 MW2011-154 |
High-order multi-level modulation formats, such as 16-QAM and 64-QAM, are promising techniques for constructing beyond-1... [more] |
ED2011-131 MW2011-154 pp.69-74 |
ED, MW |
2012-01-12 11:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Components in 0.5-um-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications Yves Bouvier, Munehiko Nagatani, Kimikazu Sano, Koichi Murata, Kenji Kurishima, Minoru Ida (NTT) ED2011-132 MW2011-155 |
Two basic components for high-speed and low-power applications, a static frequency divider and decision circuit, have be... [more] |
ED2011-132 MW2011-155 pp.75-79 |
ED, SDM |
2010-06-30 15:45 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Reliability study on the emitter-base junction for high-speed sub-micron InP HBTs Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Shoji Yamahata (NTT Photonics Labs.) ED2010-70 SDM2010-71 |
[more] |
ED2010-70 SDM2010-71 pp.81-84 |
R |
2009-11-20 14:45 |
Osaka |
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Emitter - metal - related degradation in InP-based HBTs and its suppression by introducing refractory metal Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Minoru Ida, Shoji Yamahata, Takatomo Enoki (NTT Corp.) R2009-43 |
[more] |
R2009-43 pp.11-16 |
MW, ED |
2009-01-15 14:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Two-channel InP HBT Differential Automatic-gain-control Transimpedance Amplifier IC for 43-Gbit/s DQPSK Photoreceiver Hiroyuki Fukuyama, Toshihiro Itoh, Tomofumi Furuta, Kenji Kurishima, Masami Tokumitsu, Koichi Murata (NTT) ED2008-213 MW2008-178 |
We have developed a two-channel automatic-gain-control transimpedance amplifier IC by using InP heterojunction bipolar t... [more] |
ED2008-213 MW2008-178 pp.89-94 |
ED, MW |
2008-01-17 11:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Highly reliable 0.5-um-emitter InP/InGaAs HBT Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai, Shoji Yamahata (NTT) ED2007-218 MW2007-149 |
[more] |
ED2007-218 MW2007-149 pp.67-70 |
ED, SDM |
2007-06-25 13:00 |
Overseas |
Commodore Hotel Gyeongju Chosun, Gyeongju, Korea |
[Invited Talk]
High-performance and reliable InP/InGaAs HBTs operating at high current density Shoji Yamahata, Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai (NTT), Yasuyuki Miyamoto (TOKYO TECH) |
This paper describes the high-performance and reliability of scaled InP/InGaAs HBTs with a passivation ledge structure a... [more] |
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ED, MW |
2006-01-18 14:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Up to 80-Gbit/s Operations of 1:4 Demultiplexer IC with InP HBTs Kimikazu Sano, Hiroyuki Fukuyama, Koichi Murata, Kenji Kurishima, Norihide Kashio, Takatomo Enoki, Hirohiko Sugahara (NTT PH Labo.) |
[more] |
ED2005-194 MW2005-148 pp.13-18 |
R, ED, SDM |
2005-11-25 14:25 |
Osaka |
Central Electric Club |
Highly reliable InP-based HBTs with a ledge structure operating at current density over 2mA/um2 Yoshino K. Fukai, Kenji Kurishima, Minoru Ida, Shoji Yamahata, Takatomo Enoki (NTT Photonics Labs.) |
[more] |
R2005-43 ED2005-178 SDM2005-197 pp.31-35 |
OCS, OPE, LQE |
2005-11-03 17:25 |
Fukuoka |
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100-GHz Optoelectric Integrated Circuits using InP HBTs and a UTC-PD Norihide Kashio, Kenji Kurishima, Kimikazu Sano, Minoru Ida, Noriyuki Watanabe, Hiroyuki Fukuyama, Hirohiko Sugahara, Masami Tokumitsu, Takatomo Enoki (NTT) |
We have monolithically integrated InP HBTs and a UTC-PD by a non-selective regrowth technique. The HBT shows an ft of 26... [more] |
OCS2005-56 OPE2005-86 LQE2005-94 pp.43-46 |
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