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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-12-01 15:50 |
Shizuoka | Effects of AlN template polarity on BN grown by MOVPE and high temperature annealing Yuto Oishi, Shiyu Xiao, Kenjiro Uesugi, Toru Akiyama, Tomohiro Tamano, Hideto Miyake (Mie University)  ED2023-35 CPM2023-77 LQE2023-75 |
[more] | ED2023-35 CPM2023-77 LQE2023-75 pp.94-97 |
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| ED, CPM, LQE | 2021-11-25 16:05 |
Online | Online | Substrate off-cut angle dependence on fabrication of high-temperature annealed a-plane AlN on r-plane sapphire Kota Shibutani, Kenjiro Uesugi, Shiyu Xiao, Kanako Shojiki, Shigeyuki Kuboya, Toru Akiyama, Hideto Miyake (Mie Univ.) ED2021-25 CPM2021-59 LQE2021-37 |
[more] | ED2021-25 CPM2021-59 LQE2021-37 pp.51-54 |
| ED, CPM, LQE | 2021-11-25 16:30 |
Online | Online | Growth of 220-nm-band-emission AlGaN Quantum Wells Using Annealed Sputtered AlN Template Shoya Ishihara, Shigeyuki Kuboya, Kanako Shojiki, Kenjiro Uesugi, Xiao Shiyu, Hideto Miyake (Mie Univ.) ED2021-26 CPM2021-60 LQE2021-38 |
[more] | ED2021-26 CPM2021-60 LQE2021-38 pp.55-58 |
| ED, CPM, LQE | 2021-11-26 15:20 |
Online | Online | Fabrication and electrical property characterization of AlGaN channel HEMT on AlN template Ryuichi Mori, Kenjiro Uesugi, Shegeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2021-33 CPM2021-67 LQE2021-45 |
$Al_{0.85}Ga_{0.15}N$/$Al_{0.60}Ga_{0.40}N$ HEMT structures with channel thicknesses of 100–1000 nm were grown on low-di... [more] | ED2021-33 CPM2021-67 LQE2021-45 pp.83-86 |
| LQE, CPM, ED | 2020-11-26 15:00 |
Online | Online | Growth of GaN on AlN template with atomic-level flatness for High Electron Mobility Transistor Tatsuya Shirato, Kenjiro Uesugi, Shigeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2020-11 CPM2020-32 LQE2020-62 |
We investigated the effect of carrier gas on GaN surface morphology. Bunched step-and-terrace structures and pits were f... [more] | ED2020-11 CPM2020-32 LQE2020-62 pp.41-44 |
| LQE, CPM, ED | 2020-11-27 15:20 |
Online | Online | MOVPE Growth on Low-dislocation-density AlN Templates with Nano-Striped Patterns and Crystalline-Quality Evaluations Yukino Iba, Kanako Shojiki, Shigeyuki Kuboya, Kenjiro Uesugi, Shiyu Xiao, Hideto Miyake (Mie Univ.) ED2020-24 CPM2020-45 LQE2020-75 |
We conducted metalorganic vapor phase epitaxial (MOVPE) growth of AlN films on face-to-face annealed sputtered AlN templ... [more] | ED2020-24 CPM2020-45 LQE2020-75 pp.91-94 |
| LQE, CPM, ED | 2020-11-27 16:00 |
Online | Online | Introduction of AlN/GaN Superlattice Layers for Growth of Strain-Relaxed AlGaN Films on AlN Templates Takafumi Inamori, Shigeyuki Kuboya, Shoya Ishihara, Tatsuya Shirato, Kenjiro Uesugi, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2020-26 CPM2020-47 LQE2020-77 |
[more] | ED2020-26 CPM2020-47 LQE2020-77 pp.99-102 |
| ED, LQE, CPM | 2018-11-30 14:05 |
Aichi | Nagoya Inst. tech. | Quality improvement and characteristic evaluations of sputter-deposited a-plane AlN on r-plane sapphire Ryo Fukuta, Kanako Shojiki, Jiang Nan, Kenjiro Uesugi, Yusuke Hayashi, Xiao Shiyu, Hideto Miyake (Mie Univ.) ED2018-50 CPM2018-84 LQE2018-104 |
[more] | ED2018-50 CPM2018-84 LQE2018-104 pp.83-86 |
| LQE, CPM, ED | 2017-12-01 12:55 |
Aichi | Nagoya Inst. tech. | Improvement of PBTI reliability in GaN-MOSFETs Yosuke Kajiwara, Toshiya Yonehara, Daimotsu Kato, Kenjiro Uesugi, Aya Shindome, Masahiko Kuraguchi, Akira Mukai, Hiroshi Ono, Miki Yumoto, Akira Yoshioka, Shinya Nunoue (Toshiba) ED2017-62 CPM2017-105 LQE2017-75 |
[more] | ED2017-62 CPM2017-105 LQE2017-75 pp.65-68 |
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