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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 32  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, IEE-BMS, IEE-MSS 2022-08-18
14:55
Tokyo Kikai-Shinko-Kaikan Bldg. B3-2
(Primary: On-site, Secondary: Online)
Atmosphere dependence of learning accuracy in ionic liquid-based physical reservoir devices
Masaharu Yonezawa (Tokyo Univ. of Sci./AIST), Hisashi Shima (AIST), Takuma Matsuo (Tokyo Univ. of Sci./AIST), Yasuhisa Naitoh, Hiroyuki Akinaga (AIST), Toshiyuki Itoh (Toyota Physical and Chemical Research Institute), Toshiki Nokami (Tottori Univ.), Masakazu Kobayashi (Tokyo Univ. of Sci./NAGASE & CO., LTD.), Kentaro Kinoshita (Tokyo Univ. of Sci.) ED2022-20
(To be available after the conference date) [more] ED2022-20
pp.13-16
ED, IEE-BMS, IEE-MSS 2022-08-18
15:20
Tokyo Kikai-Shinko-Kaikan Bldg. B3-2
(Primary: On-site, Secondary: Online)
Neuromorphic computing using photo-induced current properties in ITO/Nb:SrTiO3 junction -- For reservoir computing application --
Yutaro Yamazaki, Hiroyuki Kai, Kentaro Kinoshita (Tokyo Univ. of Sci.) ED2022-21
Recently, needs for edge computing have been increasing, and methods to reduce computational cost while maintaining high... [more] ED2022-21
pp.17-20
ED, IEE-BMS, IEE-MSS 2022-08-18
15:45
Tokyo Kikai-Shinko-Kaikan Bldg. B3-2
(Primary: On-site, Secondary: Online)
Mechanism elucidation of resistance relaxation phenomena in Pt/Nb: SrTiO3 junctions -- Toward the application of AI devices --
Hayato Nakamura, Hiromasa Aoki, Hiroyuki Kai, Kentaro Kinoshita (Tokyo Univ. of Sci.) ED2022-22
(To be available after the conference date) [more] ED2022-22
pp.21-24
SDM, EID 2016-12-12
13:00
Nara NAIST [Invited Talk] The tolerance of data retention characteristics to external stresses in metal oxide resistive random access memory
Kentaro Kinoshita (Tottori Univ.) EID2016-17 SDM2016-98
 [more] EID2016-17 SDM2016-98
pp.37-40
SDM, EID 2016-12-12
13:30
Nara NAIST First-Principles Calculation Studies of Resistive Switching Mechanism in Polycrystalline Metal Oxide Film
Takumi Moriyama, Sohta Hida (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2016-18 SDM2016-99
For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created i... [more] EID2016-18 SDM2016-99
pp.41-44
SDM, EID 2016-12-12
13:45
Nara NAIST Relationship between memory characteristics and Schottky parameters in Pt/Nb:STO junction
Toshiki Shiomi, Yuuto Hagihara, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.)
 [more]
MBE, NC
(Joint)
2016-03-23
10:25
Tokyo Tamagawa University Modulation transfer function measurement of CT images reconstructed by a hard kernel
Jo Mitsuzuka, Kazuhiro Sawa, Yoshinori Takehana, Akihiro Tanaka, Kentaro Kinoshita, Satoru Kishida (Tottori Univ.) NC2015-80
To develop MTF(Modulation Transfer Function) measurement of CT images reconstructed by a hard kernel filter, we proposed... [more] NC2015-80
pp.59-63
MBE, NC
(Joint)
2016-03-23
11:15
Tokyo Tamagawa University Measurement of mental Fatigue by using Flicker Values
Takumi Fukunaga, Naoki Fujiwara, Ryota Inoue, Akihiro Tanaka, Kentaro Kinoshita, Satoru Kishida (Tottori Univ.) NC2015-101
We suggest measurement system for fatigue, which consists of four units, namely units of fatigue generation, data collec... [more] NC2015-101
pp.185-188
SDM, EID 2014-12-12
17:15
Kyoto Kyoto University Study of driving forces that cause resistive switching of binary transition metal oxide memory
Ryosuke Koishi, Takumi Moriyama, Kouhei Kimura, Kouki Kawano, Hidetoshi Miyashita, Sang-Seon Lee, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-37 SDM2014-132
It is widely received that resistive switching of resistive random access memory (ReRAM) is caused by formation and rupt... [more] EID2014-37 SDM2014-132
pp.125-128
SDM, EID 2014-12-12
17:45
Kyoto Kyoto University Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM) -- Analyses of Various NiO Surface States Using Ab Initio Calculations --
Takumi Moriyama (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-39 SDM2014-134
For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created i... [more] EID2014-39 SDM2014-134
pp.135-138
SDM 2013-12-13
14:10
Nara NAIST [Invited Talk] Proposal of "Pore Engineering" as the Method for Controlling Resistive Switching Properties in Resistive Random Access Memory (ReRAM)
Kentaro Kinoshita (Tottori Univ./TEDREC), Sho Hasegawa (Tottori Univ.)
We found that both switching voltages and switching current of Cu/HfO2/Pt-structured conducting-bridge random access mem... [more]
SDM 2013-12-13
14:40
Nara NAIST The Effect of Solvent Substitution on Memory Characteristics of Cu/HfO2/Pt Conducting-Bridge Random Access Memory (CB-RAM)
Sho Hasegawa, Yutaro Enomoto, Naonobu Katada, Toshiyuki Ito, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) SDM2013-129
A ‘pore engineering’, which is a method for controlling the memory performance of conducting-bridge random access memory... [more] SDM2013-129
pp.79-83
SDM 2013-12-13
15:40
Nara NAIST Elucidation of Metal Diffusion Mechanism in Conducting-Bridge Random Access Memory (CB-RAM) Using Ab Initio Calculation
Sho Yura (Tottori Univ.), Takahiro Yamasaki (NIMS), Kengo Nakada, Akira Ishii (Tottori Univ.), Satoru Kishida, Kentaro Kinoshita (Tottori Univ./TEDREC)
 [more]
SDM 2013-12-13
16:00
Nara NAIST Data Retention Characteristics of Resistive Random Access Memory Consisting of Transition Metal Oxide
Masataka Yosihara, Ryosuke Ogata, Naohiro Murayama (Tottori Univ.), Satoru Kishida, Kentaro Kinoshita (Tottori Univ./TEDREC)
 [more]
SDM 2012-12-07
16:15
Kyoto Kyoto Univ. (Katsura) Correlation between parameters related to reset speed in HfO2 Conducting-Bridge memory
Shigeyuki Tsuruta, Kentaro Kinoshita, Sho Hasegawa, Yutaro Enomoto, Satoru Kishida (Tottori Univ.) SDM2012-135
Improvement of memory performance of conducting-bridge random access memory (CB-RAM) is possible simply by replacing con... [more] SDM2012-135
pp.119-122
SDM 2012-12-07
16:30
Kyoto Kyoto Univ. (Katsura) Memory characteristics of ReRAM filament confined in localized area.
Sang-gyu Koh, Kentaro Kinoshita, Takahiro Fukuhara, Yusuke Sawai, Satoru Kishida (Tottori Univ.) SDM2012-136
Clarification of memory characteristics of tiny cell is important for practical use of resistive random access memory (R... [more] SDM2012-136
pp.123-127
ICD 2011-04-19
15:00
Hyogo Kobe University Takigawa Memorial Hall Basic memory characteristics of HfO2-CB-RAM
Shigeyuki Tsuruta (Tottori Univ.), Kentaro Kinoshita (Tottori Univ./ TEDREC), Tatsuya Nakabayashi (Tottori Univ.), Satoru Kishida (Tottori Univ./ TEDREC) ICD2011-17
CB-RAM (Conducting Bridge Random Access Memory) is expected as a candidate for a nonvolatile memory and a switch for the... [more] ICD2011-17
pp.93-97
ICD 2011-04-19
15:25
Hyogo Kobe University Takigawa Memorial Hall Physical Analysis on ReRAM Filaments Using Atomic Force Microscope
Takatoshi Yoda (Tottori Univ.), Kentaro Kinoshita, Satoru Kishida (Tottori University/TEDREC), Toshiya Ogiwara, Hideo Iwai, Sei Fukushima, Shigeo Tanuma (NIMS) ICD2011-18
 [more] ICD2011-18
pp.99-104
ICD 2011-04-19
15:50
Hyogo Kobe University Takigawa Memorial Hall Switching Mechanism of Perovskite-Oxide-Based Resistive Random Access Memory (ReRAM)
Akihiro Hanada (Tottori Univ.), Kentaro Kinoshita (Tottori Univ./TEDREC), Katsuhiko Matsubara, Takahiro Fukuhara (Tottori Univ.), Satoru Kishida (Tottori Univ./TEDREC) ICD2011-19
We prepared resistive random access memory (ReRAM) structures of Al / Bi2Sr2CaCu2O8+δ (Bi-2212) bulk single crystal / Pt... [more] ICD2011-19
pp.105-109
ICD 2011-04-19
16:15
Hyogo Kobe University Takigawa Memorial Hall Analyses on Co-relation between Low and High Resistance States in ReRAM Consisting of Binary-Transition-Metal-Oxides
Hayato Tanaka (Tottori Univ), Kentaro Kinoshita, Satoru Kishida (Tottori Univ./TEDREC) ICD2011-20
Resistive Random Access Memory (ReRAM) is attracting attention as a non-volatile memory for the next generation. The con... [more] ICD2011-20
pp.111-116
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