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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2009-12-04
13:00
Nara NAIST [Invited Talk] Temperature dependence of threshold voltage of High-k/Metal Gate MOSFETs
Yukio Nishida (Renesas/Hiroshima Univ.), Katsumi Eikyu, Akihiro Shimizu, Tomohiro Yamashita, Hidekazu Oda, Yasuo Inoue (Renesas), Kentaro Shibahara (Hiroshima Univ./Renesas) SDM2009-159
(Advance abstract in Japanese is available) [more] SDM2009-159
pp.43-47
SDM 2008-12-05
15:50
Kyoto Kyoto University, Katsura Campus, A1-001 Amorphization of Germanium by Ion Implantatin for Shallow Junction Formation
Kosei Osada, Kentaro Shibahara (Hiroshima Univ.) SDM2008-194
For ultra-shallow junction formation process, that is indispensable for scaled Si MOSFET fabrication, pre-amorphization ... [more] SDM2008-194
pp.55-58
SDM 2007-12-14
14:30
Nara Nara Institute Science and Technology Ge n+/p Junction Formation with Xe+ Preamorphization Implantation
Tetuya Fukunaga, Kentaro Shibahara (Hiroshima Univ. Grad. Sch.)
 [more]
SDM 2007-06-07
16:20
Hiroshima Hiroshima Univ. ( Faculty Club) Workfunction Tuning of B Doped Fully-Silicided Pd2Si Gate
Hiroyuki Shiraishi, Takuji Hosoi, Akio Ohta, Seiichi Miyazaki, Kentaro Shibahara (Hiroshima Univ.) SDM2007-37
 [more] SDM2007-37
pp.33-36
SDM 2006-06-21
16:25
Hiroshima Faculty Club, Hiroshima Univ. Evaluation of Chemical Structures and Work Function of NiSi near the Interface between NiSi and SiO2
Hiromichi Yoshinaga, Daisuke Azuma, Hideki Murakami, Akio Ohta, Yuuki Munetaka, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Takayuki Aoyama, Kimihiko Hosaka (Fujitsu Laboratories Ltd.), Kentaro Shibahara (Hiroshima Univ.)
Impurity (Sb, P, B or As)-implanted Ni-silicides formed on thermally-grown SiO2 were characterized by Raman scattering s... [more] SDM2006-49
pp.43-48
 Results 1 - 5 of 5  /   
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