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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2009-12-04 13:00 |
Nara |
NAIST |
[Invited Talk]
Temperature dependence of threshold voltage of High-k/Metal Gate MOSFETs Yukio Nishida (Renesas/Hiroshima Univ.), Katsumi Eikyu, Akihiro Shimizu, Tomohiro Yamashita, Hidekazu Oda, Yasuo Inoue (Renesas), Kentaro Shibahara (Hiroshima Univ./Renesas) SDM2009-159 |
(Advance abstract in Japanese is available) [more] |
SDM2009-159 pp.43-47 |
SDM |
2008-12-05 15:50 |
Kyoto |
Kyoto University, Katsura Campus, A1-001 |
Amorphization of Germanium by Ion Implantatin for Shallow Junction Formation Kosei Osada, Kentaro Shibahara (Hiroshima Univ.) SDM2008-194 |
For ultra-shallow junction formation process, that is indispensable for scaled Si MOSFET fabrication, pre-amorphization ... [more] |
SDM2008-194 pp.55-58 |
SDM |
2007-12-14 14:30 |
Nara |
Nara Institute Science and Technology |
Ge n+/p Junction Formation with Xe+ Preamorphization Implantation Tetuya Fukunaga, Kentaro Shibahara (Hiroshima Univ. Grad. Sch.) |
[more] |
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SDM |
2007-06-07 16:20 |
Hiroshima |
Hiroshima Univ. ( Faculty Club) |
Workfunction Tuning of B Doped Fully-Silicided Pd2Si Gate Hiroyuki Shiraishi, Takuji Hosoi, Akio Ohta, Seiichi Miyazaki, Kentaro Shibahara (Hiroshima Univ.) SDM2007-37 |
[more] |
SDM2007-37 pp.33-36 |
SDM |
2006-06-21 16:25 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Evaluation of Chemical Structures and Work Function of NiSi near the Interface between NiSi and SiO2 Hiromichi Yoshinaga, Daisuke Azuma, Hideki Murakami, Akio Ohta, Yuuki Munetaka, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Takayuki Aoyama, Kimihiko Hosaka (Fujitsu Laboratories Ltd.), Kentaro Shibahara (Hiroshima Univ.) |
Impurity (Sb, P, B or As)-implanted Ni-silicides formed on thermally-grown SiO2 were characterized by Raman scattering s... [more] |
SDM2006-49 pp.43-48 |
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