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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2018-03-01
14:45		 Tokyo Tokyo Univ. of Technol. Development of low temperature atomic layer deposition for yttria
Kentaro Saito, kentaro Tokoro, Kanomata Kensaku, Masanori MIura, Bashir A. Arima, Sigeru Kubota, Fumihiko Hirose (Yamagata Univ.) CPM2017-120		  [more] CPM2017-120
pp.19-22
CPM 2017-07-22
11:15		 Hokkaido   Room-temperature atomic layer deposition of niobium oxide
Kentaro Tokoro, Kensaku Kanomata, Masanori Miura, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) CPM2017-37		 (To be available after the conference date) [more] CPM2017-37
pp.85-88
ED 2017-04-20
15:25		 Miyagi   Fabrication of SnO2 film using room temperature atomic layer deposition
Syunsuke Saito, Kentaro Tokoro, Kensaku Kanomata, Masanori Miura, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) ED2017-5		 Since most of the gas sensors using tin oxide (SnO2) are sintered type, there is a problem that variations in characteri... [more] ED2017-5
pp.17-20
ED 2016-04-22
11:30		 Yamagata   Room-temperature atomic layer deposition of zirconium oxide using plasma excited water vapor
Kentaro Tokoro, Kensaku kanomaka, Masanori Miura, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) ED2016-12		 In the field of LSI production, ZrO2 is expected as a high-k material for metal-oxide-field-effect transistors. ZrO2 has... [more] ED2016-12
pp.47-50
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