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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM 2009-07-16
15:25		 Tokyo Tokyo Institute of Technology Comprehensive Design Methodology of Dopant Profile to Suppress Gate-LER-induced Threshold Voltage Variability in sub-30 nm NMOSFETs
Hidenobu Fukutome (Fujitsu Microelectronics Limited), Yoko Hori (Fujitsu Quality Lab. Limited), Kimihiko Hosaka, Yoichi Momiyama, Shigeo Satoh, Toshihiro Sugii (Fujitsu Microelectronics Limited) SDM2009-106 ICD2009-22		 We have demonstrated for the first time that parallel extension implantation tilted along the gate width direction enabl... [more] SDM2009-106 ICD2009-22
pp.49-52
ICD, SDM 2008-07-18
15:30		 Tokyo Kikai-Shinko-Kaikan Bldg. High Performance Sub-35 nm Bulk CMOS with Hybrid Gate Structures of NMOS; Dopant Confinement Layer (DCL) / PMOS; Ni-FUSI by Using Flash Lamp Anneal (FLA) in Ni-Silicidation -- Hybrid Gate Structures --
Hiroyuki Ohta (Fujitsu Lab.), Kazuo Kawamura (FML), Hidenobu Fukutome (Fujitsu Lab.), Mitsugu Tajima, Ken-ichi Okabe (FML), Keiji Ikeda, Kimihiko Hosaka, Yoichi Momiyama, Shigeo Satoh, Toshihiro Sugii (Fujitsu Lab.) SDM2008-148 ICD2008-58		 We applied Flash Lamp Annealing (FLA) in Ni-silicidation to our developed Dopant Confinement Layer (DCL) structure for t... [more] SDM2008-148 ICD2008-58
pp.115-120
SDM 2006-06-21
16:25		 Hiroshima Faculty Club, Hiroshima Univ. Evaluation of Chemical Structures and Work Function of NiSi near the Interface between NiSi and SiO2
Hiromichi Yoshinaga, Daisuke Azuma, Hideki Murakami, Akio Ohta, Yuuki Munetaka, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Takayuki Aoyama, Kimihiko Hosaka (Fujitsu Laboratories Ltd.), Kentaro Shibahara (Hiroshima Univ.) 		Impurity (Sb, P, B or As)-implanted Ni-silicides formed on thermally-grown SiO2 were characterized by Raman scattering s... [more] SDM2006-49
pp.43-48
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