Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2025-01-29 14:50 |
Tokyo |
KIT Toranomon Graduate School (Tokyo, Online) (Primary: On-site, Secondary: Online) |
[Invited Talk]
Clarifying the Physical Origin of Long-period Electrical Instability in Silicon Fin-type Quantum Dots Hiroshi Oka, Hidehiro Asai, Kimihiko Kato, Takumi Inaba, Shunsuke Shitakata, Shota Iizuka, Yusuke Chiashi, Yuika Kobayashi, Hitoshi Yui, Shoko Nagano, Shigenori Murakami, Yoshihisa Iba, Minoru Ogura, Takashi Nakayama, Koike Hanpei, Hiroshi Fuketa (AIST), Satoshi Moriyama (TDU), Takahiro Mori (AIST) SDM2024-68 |
To realize highly integrated quantum computers, various types of solid-state qubits have been developed. In particular, ... [more] |
SDM2024-68 pp.11-14 |
SDM |
2024-11-08 10:30 |
Tokyo |
(Tokyo, Online) (Primary: On-site, Secondary: Online) |
[Invited Talk]
Understanding the Cryogenic-CMOS Operation by Milli-Kelvin Temperature Characterization Hiroshi Oka, Hidehiro Asai, Takumi Inaba, Shunsuke Shitakata, Hitoshi Yui, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Takashi Nakayama, Takahiro Mori (AIST) SDM2024-59 |
[more] |
SDM2024-59 pp.20-21 |
SDM |
2024-11-08 11:20 |
Tokyo |
(Tokyo, Online) (Primary: On-site, Secondary: Online) |
[Invited Talk]
Automation of Cryogenic Device Modeling Utilizing Neural Networks Takumi Inaba, Yusuke Chiashi, Minoru Ogura, Hidehiro Asai, Hiroshi Fuketa, Hiroshi Oka, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Takahiro Mori (AIST) SDM2024-60 |
Automated device model parameter extraction for cryogenic MOSFETs was examined. Transfer learning neural network model w... [more] |
SDM2024-60 pp.22-25 |
SDM, ICD, ITE-IST [detail] |
2024-08-06 11:00 |
Hokkaido |
Hokkaido Univ. Multimedia Education Bldg. 3F (Hokkaido, Online) (Primary: On-site, Secondary: Online) |
Understanding of Abnormal Vth Increase Induced by Hot Carrier Injection at Cryogenic Temperatures Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Kimihiko Kato, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Takahiro Mori (AIST) SDM2024-35 ICD2024-25 |
In this study, we attempted to understand the mechanisms of hot carrier degradation in cryogenic MOSFET operation. Hot c... [more] |
SDM2024-35 ICD2024-25 pp.34-37 |
SDM |
2024-01-31 12:35 |
Tokyo |
KIT Toranomon Graduate School (Tokyo, Online) (Primary: On-site, Secondary: Online) |
[Invited Talk]
Milli-Kelvin Analysis Revealing the Role of Band-edge States in Cryogenic MOSFETs Hiroshi Oka, Hidehiro Asai, Takumi Inaba, Shunsuke Shitakata, Hitoshi Yui, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Takashi Nakayama, Takahiro Mori (AIST) SDM2023-74 |
Toward large-scale quantum computers, cryogenic CMOS circuits have been developed to control and readout the qubits insi... [more] |
SDM2023-74 pp.1-4 |
SCE |
2024-01-23 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo, Online) (Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of semiconductor qubit simulator based on TCAD technology Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori (AIST) |
[more] |
|
SDM |
2023-11-09 15:55 |
Tokyo |
(Tokyo, Online) (Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of Quantum Device Simulator toward Large-Scale Integration of Silicon Qubits Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori (AIST) SDM2023-67 |
[more] |
SDM2023-67 pp.20-25 |
SDM |
2023-11-10 13:10 |
Tokyo |
(Tokyo, Online) (Primary: On-site, Secondary: Online) |
[Invited Talk]
Noies Source of MOSFETs Operating at Cryogenic Temperature Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) SDM2023-70 |
There is increasing demand for the development of classic integrated circuits to control qubits for quantum computers. F... [more] |
SDM2023-70 p.35 |
SDM, ICD, ITE-IST [detail] |
2023-08-01 15:25 |
Hokkaido |
Hokkaido Univ. Multimedia Education Bldg. 3F (Hokkaido, Online) (Primary: On-site, Secondary: Online) |
[Invited Talk]
Low-Frequency Noise Source in the Cryogenic Operation of Short-Channel Bulk MOSFET Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) SDM2023-40 ICD2023-19 |
The assignment of low-frequency noise sources in the cryogenic operation of MOSFET is of great importance because of the... [more] |
SDM2023-40 ICD2023-19 pp.22-27 |
SDM, ICD, ITE-IST [detail] |
2023-08-01 16:10 |
Hokkaido |
Hokkaido Univ. Multimedia Education Bldg. 3F (Hokkaido, Online) (Primary: On-site, Secondary: Online) |
Additional High-Pressure Hydrogen Annealing Improves the Cryogenic Operation of Si (110)-oriented n-MOSFETs Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Takumi Inaba, Shota Iizuka, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-41 ICD2023-20 |
Cryo-CMOS technology is highly demanded to realize control circuits of large-scale quantum computers, which control and ... [more] |
SDM2023-41 ICD2023-20 pp.28-31 |
SDM |
2023-06-26 10:50 |
Hiroshima |
Hiroshima Univ. (Res. Inst. of Nanodevices) (Hiroshima) |
[Memorial Lecture]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic-MOSFET Operation Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-28 |
Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale-in... [more] |
SDM2023-28 pp.5-6 |
SDM |
2022-11-11 13:00 |
Online |
Online (Online) |
[Invited Talk]
Understanding of Electron Mobility Limiting Factor in Cryo-CMOS Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2022-74 |
To realize highly-integrated quantum computers, the Cryo-CMOS circuit has attracted significant attention for control/re... [more] |
SDM2022-74 p.49 |
ICD, SDM, ITE-IST [detail] |
2022-08-09 11:05 |
Online |
(Online) |
[Invited Talk]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2022-46 ICD2022-14 |
Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale qu... [more] |
SDM2022-46 ICD2022-14 pp.54-59 |
SDM, ICD, ITE-IST [detail] |
2021-08-17 10:15 |
Online |
Online (Online) |
[Invited Talk]
Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori (AIST) SDM2021-30 ICD2021-1 |
We propose a buried nanomagnet (BNM) realizing high-speed/low-variability silicon spin qubit operation, inspired by buri... [more] |
SDM2021-30 ICD2021-1 pp.1-6 |
ICD, SDM, ITE-IST [detail] |
2020-08-07 09:30 |
Online |
Online (Online) |
[Invited Talk]
Understanding the Origin of Low-frequency Noise in Cryo-CMOS Toward Long-coherence-time Si Spin Qubit Hiroshi Oka, Takashi Matsukawa, Kimihiko Kato, Shota Iizuka, Wataru Mizubayashi, Kazuhiko Endo, Tetsuji Yasuda, Takahiro Mori (AIST) SDM2020-6 ICD2020-6 |
Si quantum computer has attracted a significant attention due to its potential for large-scale integration using semicon... [more] |
SDM2020-6 ICD2020-6 pp.25-30 |
SDM, ICD, ITE-IST [detail] |
2019-08-09 10:15 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and (Hokkaido) |
Fabrication and electrical characteristics of amorphous-ZnSnO/Si bilayer tunnel FETs Kimihiko Kato (Univ. of Tokyo/AIST), Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2019-46 ICD2019-11 |
We have examined impact of an amorphous ZnSnO channel layer with high thickness uniformity on electrical characteristics... [more] |
SDM2019-46 ICD2019-11 pp.63-66 |
SDM |
2018-11-08 11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo) |
[Invited Talk]
Proposal and device design of tunneling field effect transistor with oxide semiconductor and group-IV semiconductor Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2018-66 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] |
SDM2018-66 pp.11-16 |
SDM |
2018-01-30 11:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo) |
[Invited Talk]
Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2017-92 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] |
SDM2017-92 pp.5-8 |