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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2009-01-15
13:25
Tokyo Kikai-Shinko-Kaikan Bldg Influence of Gate Structure on Parasitic Gate Delay in InGaAs-Channel HEMTs
Kohei Horiike, Syunsuke Fukuda, Keisuke Akagawa, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2008-211 MW2008-176
InP-based high electron mobility transistors (HEMTs) have been developed for microwave and millimeter-wave ICs. By scali... [more] ED2008-211 MW2008-176
pp.77-81
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