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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 40  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
MI 2022-09-15
15:00
Kanagawa
(Primary: On-site, Secondary: Online)
Improvement of Bacteria Colony Classification Accuracy by Machine Learning Using Generative Adversarial Networks
Masaki Amano, Duc-Tho Mai, Guanghao Sun (UEC), Nguyen Vu Trung, Le Thi Hoi (HMU), Nguyen Thi Hoa (NLH), Koichiro Ishibashi (UEC) MI2022-61
 [more] MI2022-61
pp.49-52
ICD, SDM, ITE-IST [detail] 2022-08-08
14:15
Online   Evaluation of Steep Subthreshold Slope Device "Dual-gate type PN-body Tied SOI-FET" for Ultra-low Voltage Operation
Haruki Yonezaki, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC) SDM2022-38 ICD2022-6
In this study, we report the first prototype results of a Steep SS "Dual-Gate (DG) PN-Body Tied (PNBT) SOI-FET" for extr... [more] SDM2022-38 ICD2022-6
pp.17-20
VLD, DC, RECONF, ICD, IPSJ-SLDM
(Joint) [detail]
2021-12-02
15:10
Online Online A Sub uW and 14bit Resolution Temperature Sensor for IoT Using Thermistor-Defined TDC
Nguyen Trong Hung (UEC), Van Trung Nguyen (LQDTU), Koichiro Ishibashi (UEC) VLD2021-48 ICD2021-58 DC2021-54 RECONF2021-56
 [more] VLD2021-48 ICD2021-58 DC2021-54 RECONF2021-56
pp.178-181
MBE, NC
(Joint)
2020-12-18
13:50
Online Online Highly Reliable Screening System for Infectious Diseases using Contact-less Medical Radar and Data Quality Assessment Machine Learning
Koki Kumagai, Koichiro Ishibashi, Guanghao Sun (UEC) MBE2020-21
A quarantine based on body temperature has been carried out to prevent the spread of infectious diseases. However, body ... [more] MBE2020-21
pp.8-11
ICD, SDM, ITE-IST [detail] 2020-08-07
11:00
Online Online CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET”
Shota Ishiguro, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC) SDM2020-8 ICD2020-8
In this study, we report the CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET” proposed in our l... [more] SDM2020-8 ICD2020-8
pp.37-40
VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2019-11-15
16:35
Ehime Ehime Prefecture Gender Equality Center A Study on DCDC Converter for RF Energy Harvesting Applications
Munkhzul Munkhtsog, Koichiro Ishibashi (UEC) ICD2019-43 IE2019-49
RF Energy Harvesting can collect small amounts of ambient energy to power wireless devices and it can be used anywhere, ... [more] ICD2019-43 IE2019-49
pp.71-74
SDM, ICD, ITE-IST [detail] 2019-08-09
14:10
Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and Effect of Vsub and Positive Charge in Buried Oxide on Super Steep SS “PN Body-Tied SOI-FET”
Wataru Yabuki, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2019-51 ICD2019-16
In this study, We report the effect of the substrate bias (Vsub) and the positive charge (Qox) in the buried oxide (BOX)... [more] SDM2019-51 ICD2019-16
pp.89-93
SDM, ICD, ITE-IST [detail] 2019-08-09
14:35
Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and Ultra Low power rectenna with super SS "PN-Body Tied SOI-FET"
Takuya Yamada, Jiro Ida, Takayuki Mori, Nobuhiko Yasumaru, Kenji Itoh (KIT), Koichiro Ishibashi (UEC) SDM2019-52 ICD2019-17
In this report,we have simulated the rectification efficiency of the rectenna using PNBT Diode that is a diode-connected... [more] SDM2019-52 ICD2019-17
pp.95-98
ASN 2019-01-29
10:25
Kagoshima Kyuukamura Ibusuki Illumination Beat Sensor with 1 chip boost circuit for general solar cells
Kosuke Suzuki, Koichiro Ishibashi (UEC) ASN2018-88
 [more] ASN2018-88
pp.53-57
SDM 2018-11-09
15:55
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Characteristics and Ultralow Voltage Rectification Experiment on MOS Diode connection using Super Steep SS PN-Body Tied SOI-FET
Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-76
In order to utilize the Radio Frequency (RF) signal power existing in the living environment, a RF rectifier that realiz... [more] SDM2018-76
pp.59-64
SDM, ICD, ITE-IST [detail] 2018-08-07
10:45
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Talk] Energy Harvesting Beat Sensors and Potential Applications -- Realization of Low Power, Low Cost, and High Accuracy IoT Sensors --
Koichiro Ishibashi (UEC) SDM2018-27 ICD2018-14
We have proposed Beat Sensors as new concept of IoT sensors. The Beat Sensor transmits ID codes, the interval time of wh... [more] SDM2018-27 ICD2018-14
pp.11-14
SDM, ICD, ITE-IST [detail] 2018-08-07
14:25
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 Experiment of Ultralow Voltage Rectification by Super Steep SS "PN-Body Tied SOI-FET"
Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-31 ICD2018-18
In order to construct a rectifier that function with µW power, it is necessary to develop a new diode technology. The co... [more] SDM2018-31 ICD2018-18
pp.31-34
SDM, ICD, ITE-IST [detail] 2018-08-07
15:25
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 A 65nm SOTB Based-On Code-Modulated Synchronized-OOK Transmitter for Normally-Off Wireless Sensor Networks
Van-Trung Nguyen, Ryo Ishikawa, Koichiro Ishibashi (The UEC) SDM2018-33 ICD2018-20
In this paper, Code-Modulated Synchronized-OOK (CMS-OOK) modulation scheme is proposed. Based on 65nm SOTB (Silicon-On T... [more] SDM2018-33 ICD2018-20
pp.41-46
MW
(2nd)
2018-06-27
- 2018-06-29
Overseas KMITL, Bangkok, Thailand Rectification of Small Voltage Signal by Super Steep Subthreshold Slope "PN-Body Tied SOI FET" for RF Energy Harvesting
Takuya Yamada, Jiro Ida, Takayuki Mori, Shun Momose, Yasunori Tsuchiya, Kenji Itoh (KIT), Koichiro Ishibashi (UEC)
Rectification of the small voltage signal was experimentally confirmed, for the first time, by our new device of the sup... [more]
MW
(2nd)
2018-06-27
- 2018-06-29
Overseas KMITL, Bangkok, Thailand Cross-couple DTMOS Rectifier with Floating sub-circuit using 65nm SOTB CMOS technology for uW RF Energy Harvesting
Shiho Takahashi, Thuy Linh Nguyen, Yasuo Sato, Koichiro Ishibashi (The University of Electro-Communications)
This paper presents a design and evaluations of cross-couple rectifier with floating sub-circuit using DTMOS (Dynamic Th... [more]
ASN 2018-01-30
11:15
Oita Yufugo-kan (Oita) Energy Harvesting Beat Sensors and Their Characteristics -- Realization of Low Cost, Small Size, and High Accuracy IoT Sensors --
Koichiro Ishibashi, Ryohei Takitoge (UEC) ASN2017-86
 [more] ASN2017-86
pp.19-22
ASN 2018-01-31
12:20
Oita Yufugo-kan (Oita) [Poster Presentation] Nano wattage ambient temperature sensor circuit for energy harvesting sensor network
Shinya Nii, Koichiro Ishibashi (UEC) ASN2017-104
In this paper, we propose a nano watt ambient temperature sensor circuit for an energy harvesting sensor network which m... [more] ASN2017-104
pp.121-126
SDM, ICD, ITE-IST [detail] 2017-08-02
11:35
Hokkaido Hokkaido-Univ. Multimedia Education Bldg. Gate Controlled Diode Characteristics of Super Steep Subthreshold slope PN-Body Tied SOI-FET for high Efficiency RF Energy Harvesting
Shun Momose, Jiro Ida, Takayuki Mori, Takahiro Yoshida, Junpei Iwata, Takashi Horii, Takahiro Furuta, Takuya Yamada, Daichi Takamatsu, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2017-45 ICD2017-33
The gate controlled diode characteristics with our newly super steep subthreshold slope (SS) “PN-Bode Tied SOI FET” was ... [more] SDM2017-45 ICD2017-33
pp.109-114
MW
(2nd)
2017-06-14
- 2017-06-16
Overseas KMUTT, Bangkok, Thailand Possibility of Super Steep Subthreshold Slope Devices for High Efficiency RF Energy Harvesting of Ultra Low Power Input
Jiro Ida, Kenji Itoh (KIT), Koichiro Ishibashi (UEC)
The new diode technologies for RF energy harvesting of the ultralow power input was discussed. The limit of the conventi... [more]
MW
(2nd)
2017-06-14
- 2017-06-16
Overseas KMUTT, Bangkok, Thailand [Short Paper] RF Characteristics of SOTB Devices for GHz Frequency Applications
Van-Trung Nguyen, Koichiro Ishibashi (UEC)
The paper presents RF characteristics of the 65nm SOTB CMOS devices for 1GHz range. With many superior features such as ... [more]
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