| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2021-11-11 15:15 |
Online | Online | [Invited Talk]
Characterization techniques of plasma process-induced defect creation in electronic devices Koji Eriguchi (Kyoto Univ.)  SDM2021-57 |
Plasma processing plays an important role in manufacturing leading-edge electronic devices. Plasma etching achieves fine... [more] | SDM2021-57 pp.23-28 |
| SDM | 2021-01-28 15:35 |
Online | Online | [Invited Talk]
Evaluation of Defects in Si Substrates Introduced by Stochastic Lateral Straggling during Plasma Exposure and Its Impact on Ultra-low Leakage Devices Yoshihiro Sato, Takayoshi Yamada, Kazuko Nishimura, Masayuki Yamasaki, Masashi Murakami (Panasonic), Keiichiro Urabe, Koji Eriguchi (Kyoto Univ.) SDM2020-53 |
In the design of ultra-low leakage devices such as image sensors, it is critical to understand the distribution of an ex... [more] | SDM2020-53 pp.17-20 |
| ICD | 2016-04-14 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Reliability Projecting for ReRAM based on Stochastic Differential Equation Zhiqiang Wei (PSCS), Koji Eriguchi (Kyoto Univ.), Shunsaku Muraoka, Koji Katayama, Ryotaro Yasuhara, Kawai Ken, Yukio Hayakawa, Kazuhiko Shimakawa, Takumi Mikawa, Yoneda Shinichi (PSCS) ICD2016-7 |
An analytic formula based on stochastic differential equation is successfully developed to describe intrinsic ReRAM vari... [more] | ICD2016-7 pp.33-37 |
| SDM | 2013-10-18 11:00 |
Miyagi | Niche, Tohoku Univ. | Classical molecular dynamics simulations of plasma-induced physical damage
-- defect generation mechanisms in fin-type MOSFET -- Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2013-95 |
[more] | SDM2013-95 pp.37-40 |
| SDM | 2013-10-18 13:30 |
Miyagi | Niche, Tohoku Univ. | Effects of plasma-induced charging damage on random telegraph noise (RTN) behaviors in advanced MOSFETs Masayuki Kamei, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.) SDM2013-97 |
[more] | SDM2013-97 pp.47-50 |
| SDM | 2012-10-25 16:35 |
Miyagi | Tohoku Univ. (Niche) | Analysis of Plasma-Induced Si Substrate Damage using Temperature-Controlled Photoreflectance Spectroscopy and Defect Distribution Profiling using Wet Etching Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.) |
Si substrate damage in the source/drain extension regions during plasma etching is a serious issue that causes degradati... [more] | |
| SDM | 2011-10-21 14:00 |
Miyagi | Tohoku Univ. (Niche) | [Invited Talk]
Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2011-110 |
We investigated the effects of plasma process-induced physical damage (bombardment of ions) on MOSFET performance degrad... [more] | SDM2011-110 pp.73-78 |
| SDM | 2011-10-21 14:50 |
Miyagi | Tohoku Univ. (Niche) | Electrical Characterization Techniques for Si Substrate Damage during Plasma Etching Yoshinori Nakakubo, Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2011-111 |
We present analysis techniques for plasma process-induced damage in the Si substrate. The techniques are based on the el... [more] | SDM2011-111 pp.79-84 |
[Return to Top Page]