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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 61  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2023-01-27
11:00
Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)
Measurement Evaluation of Bias Dependence of Single-Input Broadband GaN Amplifier
Yuki Nakagawa, Takana Kaho (Shonan Inst. Tech.), Shuichi Sakata, Yuji Komatsuzaki, Koji Yamanaka (MELCO)
 [more]
MW, ED 2023-01-27
12:50
Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)
Effects of GaN traps in GaN HEMTs to Low Frequency Y22 Parameters -- Device Simulation Study --
Shogo Morokuma (Saga Univ.), Tomohiro Otsuka (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric)
 [more]
MW, ED 2023-01-27
15:25
Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)
[Invited Talk] Requierements for sharing type 4G/5G base station transciever amplifiers
Koji Yamanaka, Yuji Komatsuzaki, Shuichi Sakata, Kento Saiki (Mitsubishi Electric), Takana Kaho (SIT)
 [more]
CPM, ED, LQE 2022-11-24
14:35
Aichi Winc Aichi (Aichi Industry & Labor Center)
(Primary: On-site, Secondary: Online)
Evaluation of Fe Induced Trap in GaN HEMTs using Low-Frequency Y22 Measurement
Taiki Nishida, Toshiyuki Oishi (Saga Univ.), Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Elec. Corp.) ED2022-34 CPM2022-59 LQE2022-67
One issue in improving amplifier performance using GaN is evaluating the characteristics of traps. In this study, we eva... [more] ED2022-34 CPM2022-59 LQE2022-67
pp.49-52
AP, MW
(Joint)
2022-09-15
11:35
Ehime The Museum of Art, EHIME
(Primary: On-site, Secondary: Online)
Examination of Wideband Measurement of Dual-input GaN Amplifier Using Vector Transceiver
Takato Suzuki, Yahiro Nanba, Takana Kaho (Shonan Inst. Tech.), Shuichi Sakata, Yuji Komatsuzaki, Koji Yamanaka (MELCO) MW2022-75
We are researching a wideband dual-input one-output GaN amplifier for base stations that covers 4G / 5G frequencies. It ... [more] MW2022-75
pp.36-41
MW, WPT 2022-04-15
15:40
Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)
[Invited Talk] A High Efficiency 3.6-4.0 GHz Envelope-Tracking Power Amplifier Using GaN Soft-Switching Buck-Converter
Yuji Komatsuzaki (Mitsubishi Electric), Sandro Lanfranco, Tapio Kolmonen, Olli Piirainen, Jarno K. Tanskanen (Nokia Bell Labs), Shuichi Sakata (Mitsubishi Electric), Rui Ma (MERL), Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric), Peter Asbeck (UCSD) WPT2022-11 MW2022-11
We report a high efficiency sub-6GHz wideband Envelope-Tracking Power Amplifier (ET-PA) including an envelope amplifier ... [more] WPT2022-11 MW2022-11
pp.40-45
MW 2022-03-03
14:25
Online Online Examination of Measurement Evaluation System of 2-input GaN Amplifier Using Vector Transceiver
Haruki Mori, Takato Suzuki, Takana Kaho (Shonan Inst. Tech.), Yuji Komatsuzaki, Kento Saiki, Koji Yamanaka (Mitsubishi Electric) MW2021-122
 [more] MW2021-122
pp.63-68
ED, MW 2022-01-27
16:05
Online Online [Invited Talk] Wideband Load Modulated GaN Power Amplifiers for Wireless Base-Stations
Shuichi Sakata, Yuji Komatsuzaki, Kento Saiki, Koji Yamanaka, Masaomi Tsuru (Mitsubishi Electric) ED2021-68 MW2021-110
Recently, 5G commercial services which have features of high speed, large capacity and multi-connectivity have rolled ou... [more] ED2021-68 MW2021-110
pp.32-37
MW 2021-12-16
14:50
Kanagawa Kawasaki City Industrial Promotion Hall
(Primary: On-site, Secondary: Online)
Evaluation of distortion compensation characteristics of wideband GaN amplifier with multi-carrier input
Haruki Mori, Kouki Hattori, Takana Kaho (Shonan Inst. Tech.), Yuji Komatsuzaki, Kento Saiki, Koji Yamanaka (Mitsubishi Electric) MW2021-91
 [more] MW2021-91
pp.37-42
ED, MW 2018-01-26
09:55
Tokyo Kikai-Shinko-Kaikan Bldg. UHF-C Band Broadband Power Amplifier with Series Connected SiGe HBT and GaN HEMT
Eigo Kuwata, Kengo Kawasaki, Daisuke Tsunami, Kazuhiro Maeda, Koji Yamanaka (MELCO) ED2017-98 MW2017-167
This paper reports on a multi chips amplifier consists of Gallium Nitride High Electron Mobility Transistor (GaN HEMT) a... [more] ED2017-98 MW2017-167
pp.25-29
MW 2017-11-09
14:20
Okinawa Miyakojima Marin Terminal Bldg. A 30-W class X-band GaN-on-Si MMIC Power Amplifier with a GaAs MMIC Output Matching Circuit
Jun Kamioka, Yoshifumi Kawamura, Kazuhiko Nakahara, Hiroyuki Okazaki, Masatake Hangai, Koji Yamanaka (Mitsubishi Electric Corporation) MW2017-122
 [more] MW2017-122
pp.57-60
MW, EMCJ, EST, IEE-EMC [detail] 2017-10-20
11:05
Akita Yupopo 5.8GHz High Efficiency GaN Amplifier for Practical Use of Microwave Power Transfer
Koji Yamanaka, Kazuhiro Iyomasa, Masatake Hangai, Hiromitsu Utsumi, Jun Nishihara, Yukihiro Homma (Mitsubishi Electric), Kenji Sakaki (J-SS) EMCJ2017-47 MW2017-99 EST2017-62
In this paper, a state-of-the-art high power and high efficiency GaN HEMT amplifier, which is to be used in 5.8GHz micro... [more] EMCJ2017-47 MW2017-99 EST2017-62
pp.117-122
MW, EMCJ, EST, IEE-EMC [detail] 2017-10-20
16:40
Akita Yupopo Demonstration of Uniform Heating Distribution Control for Microwave Heating Small Reactor with Solid-State Oscillators
Kazuhiro Iyomasa, Yoshifumi Kawamura, Ryota Komaru, Yutaro Yamaguchi, Keigo Nakatani, Takeshi Shiode, Koji Yamanaka, Kazutomi Mori, Hiroshi Fukumoto (Melco) EMCJ2017-58 MW2017-110 EST2017-73
(To be available after the conference date) [more] EMCJ2017-58 MW2017-110 EST2017-73
pp.171-175
AP, MW
(Joint)
2017-09-22
14:25
Saitama Saitama University 20W Output Power C-X Band Broadband High Efficiency High Power Amplifier with MIM Resonator Type Multi Matching Network
Eigo Kuwata, Dai Ninomiya, Daisuke Tsunami, Makoto Kimura, Koji Yamanaka (MELCO) MW2017-76
 [more] MW2017-76
pp.47-52
MW, ED 2017-01-27
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. An X-band Low Loss/High Power SPST Switch Using GaN on Si
Ryota Komaru, Masatake Hangai, Kazuhiko Nakahara, Hiroyuki Okazaki, Koji Yamanaka (Mitsubishi Electric) ED2016-106 MW2016-182
An X-band low loss and high power switch using GaN on Si has been developed. The high power switch utilized asymmetric c... [more] ED2016-106 MW2016-182
pp.53-56
MW, ED 2017-01-27
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. Physical model of GaN HEMT on Si including temperature dependence of RF leakage current in substrates
Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga univ.) ED2016-107 MW2016-183
 [more] ED2016-107 MW2016-183
pp.57-62
MW, ED 2017-01-27
13:25
Tokyo Kikai-Shinko-Kaikan Bldg. Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation
Toshiyuki Oishi (Saga univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric corp.) ED2016-108 MW2016-184
Effects of passivation residual stress on electrical characteristics for GaN HEMTs have been studied by using a TCAD sim... [more] ED2016-108 MW2016-184
pp.63-68
MW, ED 2017-01-27
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. A compact 8.5-10.5 GHz GaN-on-Si MMIC Amplifier for a low cost transmitter
Jun Kamioka, Masatake Hangai, Kazuhiko Nakahara (Mitsubishi Electric Corp.), Hiroyuki Okazaki (Mitsubishi Electric Corporation), Koji Yamanaka (Mitsubishi Electric Corp.) ED2016-109 MW2016-185
 [more] ED2016-109 MW2016-185
pp.69-73
MW, ED 2017-01-27
14:25
Tokyo Kikai-Shinko-Kaikan Bldg. C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network
Eigo Kuwata, Atsuo Sugimoto, Hidetoshi Koyama, Yoshitaka Kamo, Ryota Komaru, Koji Yamanaka (Mitsubishi Electric) ED2016-110 MW2016-186
This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Cir... [more] ED2016-110 MW2016-186
pp.75-79
MW, ED 2017-01-27
14:50
Tokyo Kikai-Shinko-Kaikan Bldg. 30W Output/60% PAE GaN Power Amplifier at X-band 8% Relative Bandwidth Utilizing 0.15um GaN HEMT Technology
Yoshifumi Kawamura, Masatake Hangai, Tomohiro Mizutani, Kenichi Tomiyama, Koji Yamanaka (Mitsubishi Electric) ED2016-111 MW2016-187
In this paper, a 30W-class X-band high-efficiency Internally Matched FET (IMFET) implemented in a 0.15 um GaN HEMT proce... [more] ED2016-111 MW2016-187
pp.81-84
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