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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2019-01-17
Tokyo Hitachi, Central Research Lab. Reduction of dislocation density leading improvement of current collapse under high electric-field stress by using GaN-on-GaN structure
Akifumi Imai, Koji Yoshitsugu, Takuma Nanjo, Tatsuro Watahiki, Mikio Yamamuka (Mitsubishi Electric Co.) ED2018-79 MW2018-146
 [more] ED2018-79 MW2018-146
SDM, EID 2014-12-12
Kyoto Kyoto University Atomic Layer Deposition of Al2O3 Film Utilizing Water Vapor Plasma Oxidation
Tomoaki Umehara, Masahiro Horita, Koji Yoshitsugu, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2014-36 SDM2014-131
In this paper, we reported Al2O3 insulation film deposited by atomic layer deposition(ALD) for application of GaN power ... [more] EID2014-36 SDM2014-131
SDM 2013-12-13
Nara NAIST Electrical characteristics of ALD-Al2O3 gate dielectric on n-GaN treated by high pressure water vapor annealing
Koji Yoshitsugu, Tomoaki Umehara, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2013-117
In this paper, we investigated the effect of high pressure water vapor annealing (HPWVA) as a post deposition annealing ... [more] SDM2013-117
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